Fractional quantum Hall phase transitions and four-flux states in graphene

Evidence for Topological Protection Derived from Six-Flux Composite Fermions

The composite fermion theory opened a new chapter in understanding many-body correlations through the formation of emergent particles. The formation of two-flux and four-flux composite fermions is well established. While there are limited data linked to the formation of six-flux composite fermions, topological protection associated with them is conspicuously lacking. Here we report evidence for the formation of a quantized and gapped fractional quantum Hall state at the filling factor ν = 9/11, which we associate with the formation of six-flux composite fermions. Our result provides evidence for the most intricate composite fermion with six fluxes and expands the already diverse family of highly correlated topological phases with a new member that cannot be characterized by correlations present in other known members. Our observations pave the way towards the study of higher order correlations in the fractional quantum Hall regime.

Valley-Tunable Even-Denominator Fractional Quantum Hall State in the Lowest Landau Level of an Anisotropic System

Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors (ν) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at ν=1/2 in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multivalley degree of freedom offer an unprecedented tunability of the ν=1/2 FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the ν=1/2 FQHS depend strongly on valley occupancy.

Size dependence- and induced transformations- of fractional quantum Hall effects under tilted magnetic fields

Two-dimensional electron systems subjected to high transverse magnetic fields can exhibit Fractional Quantum Hall Effects (FQHE). In the GaAs/AlGaAs 2D electron system, a double degeneracy of Landau levels due to electron-spin, is removed by a small Zeeman spin splitting, \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$g \mu _B B$$\end{document}gμBB, comparable to the correlation energy. Then, a change of the Zeeman splitting relative to the correlation energy can lead to a re-ordering between spin polarized, partially polarized, and unpolarized many body ground states at a constant filling factor. We show here that tuning the spin energy can produce fractionally quantized Hall effect transitions that include both a change in \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\nu$$\end{document}ν for the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{xx}$$\end{document}Rxx minimum, e.g., from \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\nu = 11/7$$\end{document}ν=11/7 to \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\nu = 8/5$$\end{document}ν=8/5, and a corresponding change in the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{xy}$$\end{document}Rxy, e.g., from \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{xy}/R_{K} = (11/7)^{-1}$$\end{document}Rxy/RK=(11/7)-1 to \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{xy}/R_{K} = (8/5)^{-1}$$\end{document}Rxy/RK=(8/5)-1, with increasing tilt angle. Further, we exhibit a striking size dependence in the tilt angle interval for the vanishing of the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\nu = 4/3$$\end{document}ν=4/3 and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\nu = 7/5$$\end{document}ν=7/5 resistance minima, including “avoided crossing” type lineshape characteristics, and observable shifts of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{xy}$$\end{document}Rxy at the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{xx}$$\end{document}Rxx minima- the latter occurring for \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\nu = 4/3, 7/5$$\end{document}ν=4/3,7/5 and the 10/7. The results demonstrate both size dependence and the possibility, not just of competition between different spin polarized states at the same \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\nu$$\end{document}ν and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$R_{xy}$$\end{document}Rxy, but also the tilt- or Zeeman-energy-dependent- crossover between distinct FQHE associated with different Hall resistances.

Marginal metallic state at a fractional filling of '8/5' and '4/3' of Landau levels in the GaAs/AlGaAs 2D electron system

A metallic state with a vanishing activation gap, at a filling factor [Formula: see text] in the untilted specimen with [Formula: see text], and at [Formula: see text] at [Formula: see text] under a [Formula: see text] tilted magnetic field, is examined through a microwave photo-excited transport study of the GaAs/AlGaAs 2 dimensional electron system (2DES). The results presented here suggest, remarkably, that at the possible degeneracy point of states with different spin polarization, where the 8/5 or 4/3 FQHE vanish, there occurs a peculiar marginal metallic state that differs qualitatively from a quantum Hall insulating state and the usual quantum Hall metallic state. Such a marginal metallic state occurs most prominently at [Formula: see text], and at [Formula: see text] under tilt as mentioned above, over the interval [Formula: see text], that also includes the [Formula: see text] state, which appears perceptibly gapped in the first instance.

Experimental Determination of the Energy per Particle in Partially Filled Landau Levels

We describe an experimental technique to measure the chemical potential μ in atomically thin layered materials with high sensitivity and in the static limit. We apply the technique to a high quality graphene monolayer to map out the evolution of μ with carrier density throughout the N=0 and N=1 Landau levels at high magnetic field. By integrating μ over filling factor ν, we obtain the ground state energy per particle, which can be directly compared to numerical calculations. In the N=0 Landau level, our data show exceptional agreement with numerical calculations over the whole Landau level without adjustable parameters as long as the screening of the Coulomb interaction by the filled Landau levels is accounted for. In the N=1 Landau level, a comparison between experimental and numerical data suggests the importance of valley anisotropic interactions and reveals a possible presence of valley-textured electron solids near odd filling.

Widely Tunable Quantum Phase Transition from Moore-Read to Composite Fermi Liquid in Bilayer Graphene

We develop a proposal to realize a widely tunable and clean quantum phase transition in bilayer graphene between two paradigmatic fractionalized phases of matter: the Moore-Read fractional quantum Hall state and the composite Fermi liquid metal. This transition can be realized at total fillings ν=±3+1/2 and the critical point can be controllably accessed by tuning either the interlayer electric bias or the perpendicular magnetic field values over a wide range of parameters. We study the transition numerically within a model that contains all leading single particle corrections to the band structure of bilayer graphene and includes the fluctuations between the n=0 and n=1 cyclotron orbitals of its zeroth Landau level to delineate the most favorable region of parameters to experimentally access this unconventional critical point. We also find evidence for a new anisotropic gapless phase stabilized near the level crossing of n=0/1 orbits.

Resymmetrizing Broken Symmetry with Hydraulic Pressure

Recent progress in condensed matter physics, such as for graphene, topological insulators, and Weyl semimetals, often originate from the specific topological symmetries of their lattice structures. Quantum states with different degrees of freedom, e.g., spin, valley, layer, etc., arise from these symmetries, and the coherent superposition of these states form multiple energy subbands. The pseudospin, a concept analogous to the Dirac spinor matrices, is a successful description of such multisubband systems. When the electron-electron interaction dominates, many-body quantum phases arise. They usually have discrete pseudospin polarizations and exhibit sharp phase transitions at certain universal critical pseudospin energy splittings. In this Letter, we present our discovery of hydrostatic-pressure-induced degeneracy between the two lowest Landau levels. This degeneracy is evidenced by the pseudospin polarization transitions of the fragile correlated quantum liquid phases near the Landau level filling factor ν=3/2. Benefitting from the constant hole concentration and the sensitive nature of these transitions, we study the fine-tuning effect of the hydrostatic pressure at the order of 10  μeV, well beyond the meV-level state-of-the-art resolution of other techniques.

Microscopic study of the Halperin-Laughlin interface through matrix product states

Interfaces between topologically distinct phases of matter reveal a remarkably rich phenomenology. We study the experimentally relevant interface between a Laughlin phase at filling factor ν = 1/3 and a Halperin 332 phase at filling factor ν = 2/5. Based on our recent construction of chiral topological interfaces (Nat. Commun. https://doi.org/10.1038/s41467-019-09168-z ; 2019), we study a family of model wavefunctions that captures both the bulk and interface properties. These model wavefunctions are built within the matrix product state framework. The validity of our approach is substantiated through extensive comparisons with exact diagonalization studies. We probe previously unreachable features of the low energy physics of the transition. We provide, amongst other things, the characterization of the interface gapless mode and the identification of the spin and charge excitations in the many-body spectrum. The methods and tools presented are applicable to a broad range of topological interfaces.

Model states for a class of chiral topological order interfaces

Interfaces between topologically distinct phases of matter reveal a remarkably rich phenomenology. To go beyond effective field theories, we study the prototypical example of such an interface between two Abelian states, namely the Laughlin and Halperin states. Using matrix product states, we propose a family of model wavefunctions for the whole system including both bulks and the interface. We show through extensive numerical studies that it unveils both the universal properties of the system, such as the central charge of the gapless interface mode and its microscopic features. It also captures the low energy physics of experimentally relevant Hamiltonians. Our approach can be generalized to other phases described by tensor networks.

High-Quality Electrostatically Defined Hall Bars in Monolayer Graphene

Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high-quality gate-defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the ν = 0 insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised, we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall states that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach toward structuring graphene-based quantum transport devices.

High-Quality Magnetotransport in Graphene Using the Edge-Free Corbino Geometry

We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation together with a dual-graphite gate structure. Bulk conductance measurement in the quantum Hall effect (QHE) regime outperforms previously reported Hall bar measurements, with improved resolution observed for both the integer and fractional QHE states. We identify apparent phase transitions in the fractional sequence in both the lowest and first excited Landau levels (LLs) and observe features consistent with electron solid phases in higher LLs.

Electrical generation and detection of spin waves in a quantum Hall ferromagnet

Spin waves are collective excitations of magnetic systems. An attractive setting for studying long-lived spin-wave physics is the quantum Hall (QH) ferromagnet, which forms spontaneously in clean two-dimensional electron systems at low temperature and in a perpendicular magnetic field. We used out-of-equilibrium occupation of QH edge channels in graphene to excite and detect spin waves in magnetically ordered QH states. Our experiments provide direct evidence for long-distance spin-wave propagation through different ferromagnetic phases in the N = 0 Landau level, as well as across the insulating canted antiferromagnetic phase. Our results will enable experimental investigation of the fundamental magnetic properties of these exotic two-dimensional electron systems.

Quantitative Transport Measurements of Fractional Quantum Hall Energy Gaps in Edgeless Graphene Devices

Owing to their wide tunability, multiple internal degrees of freedom, and low disorder, graphene heterostructures are emerging as a promising experimental platform for fractional quantum Hall (FQH) studies. Here, we report FQH thermal activation gap measurements in dual graphite-gated monolayer graphene devices fabricated in an edgeless Corbino geometry. In devices with substrate-induced sublattice splitting, we find a tunable crossover between single- and multicomponent FQH states in the zero energy Landau level. Activation gaps in the single-component regime show excellent agreement with numerical calculations using a single broadening parameter Γ≈7.2  K. In the first excited Landau level, in contrast, FQH gaps are strongly influenced by Landau level mixing, and we observe an unexpected valley-ordered state at integer filling ν=-4.

Topological Exciton Fermi Surfaces in Two-Component Fractional Quantized Hall Insulators

A wide variety of two-dimensional electron systems allow for independent control of the total and relative charge density of two-component fractional quantum Hall (FQH) states. In particular, a recent experiment on bilayer graphene (BLG) observed a continuous transition between a compressible and incompressible phase at total filling ν_{T}=1/2 as charge is transferred between the layers, with the remarkable property that the incompressible phase has a finite interlayer polarizability. We argue that this occurs because the topological order of ν_{T}=1/2 systems supports a novel type of interlayer exciton that carries Fermi statistics. If the fermionic excitons are lower in energy than the conventional bosonic excitons (i.e., electron-hole pairs), they can form an emergent neutral Fermi surface, providing a possible explanation of an incompressible yet polarizable state at ν_{T}=1/2. We perform exact diagonalization studies that demonstrate that fermionic excitons are indeed lower in energy than bosonic excitons. This suggests that a "topological exciton metal" hidden inside a FQH insulator may have been realized experimentally in BLG. We discuss several detection schemes by which the topological exciton metal can be experimentally probed.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg _x Zn[Formula: see text]O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility ([Formula: see text] cm² Vs^-1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Light-Induced Fractional Quantum Hall Phases in Graphene

We show how to realize two-component fractional quantum Hall phases in monolayer graphene by optically driving the system. A laser is tuned into resonance between two Landau levels, giving rise to an effective tunneling between these two synthetic layers. Remarkably, because of this coupling, the interlayer interaction at nonzero relative angular momentum can become dominant, resembling a hollow-core pseudopotential. In the weak tunneling regime, this interaction favors the formation of singlet states, as we explicitly show by numerical diagonalization, at fillings ν=1/2 and ν=2/3. We discuss possible candidate phases, including the Haldane-Rezayi phase, the interlayer Pfaffian phase, and a Fibonacci phase. This demonstrates that our method may pave the way towards the realization of non-Abelian phases, as well as the control of topological phase transitions, in graphene quantum Hall systems using optical fields and integrated photonic structures.

Unconventional fractional quantum Hall effect in bilayer graphene

Recent experimental progress in Hall measurements in bilayer graphene in the so-called open-face configuration of boron nitride encapsulated samples, together with the earlier technique of suspended samples, allows for precise observation of the fractional quantum Hall effect (FQHE) in all 4 subbands of the Lowest Landau level (with n = 0 and n = 1) and in the next LL subbands (with n = 2) in the bilayer system. Many newly observed FQHE features do not agree with a conventional model of composite fermions and reveal a different hierarchy in comparison to monolayer graphene or GaAs 2DEG. We explain the peculiarity of the FQHE hierarchy in the bilayer system in the framework of a topological approach, which includes the composite fermion model as its special case. Inclusion of a topological effect caused by the hopping of electrons between the two sheets in the bilayer system allowed for an explanation of the FQHE hierarchy in the graphene bilayer in satisfactory accordance with the experimental observations.

Landau-Level Mixing and Particle-Hole Symmetry Breaking for Spin Transitions in the Fractional Quantum Hall Effect

The spin transitions in the fractional quantum Hall effect provide a direct measure of the tiny energy differences between differently spin-polarized states and thereby serve as an extremely sensitive test of the quantitative accuracy of the theory of the fractional quantum Hall effect, and, in particular, of the role of Landau-level mixing in lifting the particle-hole symmetry. We report on an accurate quantitative study of this physics, evaluating the effect of Landau-level mixing in a nonperturbative manner using a fixed-phase diffusion Monte Carlo method. We find excellent agreement between our calculated critical Zeeman energies and the experimentally measured values. In particular, we find, as also do experiments, that the critical Zeeman energies for fractional quantum Hall states at filling factors ν=2-n/(2n±1) are significantly higher than those for ν=n/(2n±1), a quantitative signature of the lifting of particle-hole symmetry due to Landau-level mixing.

Unconventional fractional quantum Hall effect in monolayer and bilayer graphene

The commensurability condition is applied to determine the hierarchy of fractional fillings of Landau levels in monolayer and in bilayer graphene. The filling rates for fractional quantum Hall effect (FQHE) in graphene are found in the first three Landau levels in one-to-one agreement with the experimental data. The presence of even denominator filling fractions in the hierarchy for FQHE in bilayer graphene is explained. Experimentally observed hierarchy of FQHE in the first and second Landau levels in monolayer graphene and in the zeroth Landau level in bilayer graphene is beyond the conventional composite fermion interpretation but fits to the presented nonlocal topology commensurability condition.

The Ground State of Monolayer Graphene in a Strong Magnetic Field

Experiments indicate that the ground state of graphene in a strong magnetic field exhibits spontaneous breaking of SU(4) symmetry. However, the nature of the corresponding emergent state is unclear because existing theoretical methods approximate the broken-symmetry solutions, yielding nearly-degenerate candidate ground states having different emergent orders. Resolving this ambiguity in the nature of the strong-field ground state is highly desirable, given the importance of graphene for both fundamental physics and technical applications. We have discovered a new SO(8) symmetry that recovers standard graphene SU(4) quantum Hall physics, but predicts two new broken-SU(4) phases and new properties for potential ground states. Our solutions are analytical; thus we capture the essential physics of spontaneously-broken SU(4) states in a powerful yet solvable model useful both in correlating existing data and in suggesting new experiments.

Explanation of [Formula: see text] fractional quantum Hall state in bilayer graphene

The commensurability condition is applied to determine the hierarchy of fractional filling of Landau levels for fractional quantum Hall effect (FQHE) in monolayer and bilayer graphene. Good agreement with experimental data is achieved. The presence of even-denominator filling fractions in the hierarchy of the FQHE in bilayer graphene is explained, including the state at [Formula: see text].

Fractional Quantum Hall States in Bilayer Graphene Probed by Transconductance Fluctuations

We have investigated fractional quantum Hall (QH) states in Bernal-stacked bilayer graphene using transconductance fluctuation measurements. A variety of odd-denominator fractional QH states with νQH → νQH + 2 symmetry, as previously reported, are observed. However, surprising is that also particle-hole symmetric states are clearly resolved in the same measurement set. We attribute their emergence to the reversal of orbital states in the octet level scheme induced by a strong local charge imbalance, which can be captured by the transconductance fluctuations. Also the even-denominator fractional QH state at filling -1/2 is observed. However, contrary to a previous study on a suspended graphene layer [ Ki et al. Nano Lett. 2014, 14 , 2135 ], the particle-hole symmetric state at filling 1/2 is detected as well. These observations suggest that the stability of both odd and even denominator fractional QH states is very sensitive to local transverse electric fields in bilayer graphene.

Luttinger Theorem for the Strongly Correlated Fermi Liquid of Composite Fermions

While an ordinary Fermi sea is perturbatively robust to interactions, the paradigmatic composite-fermion (CF) Fermi sea arises as a nonperturbative consequence of emergent gauge fields in a system where there was no Fermi sea to begin with. A mean-field picture suggests two Fermi seas, of composite fermions made from electrons or holes in the lowest Landau level, which occupy different areas away from half filling and thus appear to represent distinct states. Using the microscopic theory of composite fermions, which satisfies particle-hole symmetry in the lowest Landau level to an excellent approximation, we show that the Fermi wave vectors at filling factors ν and 1-ν are equal when expressed in units of the inverse magnetic length, and are generally consistent with the experimental findings of Kamburov et al. [Phys. Rev. Lett. 113, 196801 (2014)]. Our calculations suggest that the area of the CF Fermi sea may slightly violate the Luttinger area rule.

Hierarchy of fillings for the FQHE in monolayer graphene

In this paper, the commensurability conditions, which originated from the unique topology of two-dimensional systems, are applied to determine the quantum Hall effect hierarchy in the case of a monolayer graphene. The fundamental difference in a definition of a typical semiconductor and a monolayer graphene filling factor is pointed out. The calculations are undertaken for all spin-valley branches of two lowest Landau levels, since only they are currently experimentally accessible. The obtained filling factors are compared with the experimental data and a very good agreement is achieved. The work also introduces a concept of the single-loop fractional quantum Hall effect.

The rare two-dimensional materials with Dirac cones

Inspired by the great development of graphene, more and more research has been conducted to seek new two-dimensional (2D) materials with Dirac cones. Although 2D Dirac materials possess many novel properties and physics, they are rare compared with the numerous 2D materials. To provide explanation for the rarity of 2D Dirac materials as well as clues in searching for new Dirac systems, here we review the recent theoretical aspects of various 2D Dirac materials, including graphene, silicene, germanene, graphynes, several boron and carbon sheets, transition-metal oxides (VO2)n/(TiO2)m and (CrO2)n/(TiO2)m, organic and organometallic crystals, so-MoS2, and artificial lattices (electron gases and ultracold atoms). Their structural and electronic properties are summarized. We also investigate how Dirac points emerge, move, and merge in these systems. The von Neumann–Wigner theorem is used to explain the scarcity of Dirac cones in 2D systems, which leads to rigorous requirements on the symmetry, parameters, Fermi level, and band overlap of materials to achieve Dirac cones. Connections between existence of Dirac cones and the structural features are also discussed.

Recent experimental progress of fractional quantum Hall effect: 5/2 filling state and graphene

The phenomenon of fractional quantum Hall effect (FQHE) was first experimentally observed 33 years ago. FQHE involves strong Coulomb interactions and correlations among the electrons, which leads to quasiparticles with fractional elementary charge. Three decades later, the field of FQHE is still active with new discoveries and new technical developments. A significant portion of attention in FQHE has been dedicated to filling factor 5/2 state, for its unusual even denominator and possible application in topological quantum computation. Traditionally, FQHE has been observed in high-mobility GaAs heterostructure, but new materials such as graphene also open up a new area for FQHE. This review focuses on recent progress of FQHE at 5/2 state and FQHE in graphene.

Effects of Landau level mixing on the fractional quantum Hall effect in monolayer graphene

We report results of exact diagonalization studies of the spin- and valley-polarized fractional quantum Hall effect in the N = 0 and N = 1 Landau levels in graphene. We use an effective model that incorporates Landau level mixing to lowest order in the parameter κ = ((e(2)/εℓ)/(ħv(F)/ℓ)) = (e(2)/εv(F)ħ), which is magnetic field independent and can only be varied through the choice of substrate. We find Landau level mixing effects are negligible in the N = 0 Landau level for κ ≲ 2. In fact, the lowest Landau level projected Coulomb Hamiltonian is a better approximation to the real Hamiltonian for graphene than it is for semiconductor based quantum wells. Consequently, the principal fractional quantum Hall states are expected in the N = 0 Landau level over this range of κ. In the N = 1 Landau level, fractional quantum Hall states are expected for a smaller range of κ and Landau level mixing strongly breaks particle-hole symmetry, producing qualitatively different results compared to the N = 0 Landau level. At half filling of the N = 1 Landau level, we predict the anti-Pfaffian state will occur for κ ∼ 0.25-0.75.

Tunable fractional quantum Hall phases in bilayer graphene

Symmetry-breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the charge neutrality point. In a quantizing magnetic field, electron interactions can cause spontaneous symmetry-breaking within the spin and valley degrees of freedom, resulting in quantum Hall effect (QHE) states with complex order. Here, we report fractional QHE states in BLG that show phase transitions that can be tuned by a transverse electric field. This result provides a model platform with which to study the role of symmetry-breaking in emergent states with topological order.

Broken SU(4) symmetry and the fractional quantum Hall effect in graphene

We describe a variational theory for incompressible ground states and charge gaps in the N=0 Landau level of graphene that accounts for the fourfold Landau level degeneracy and the short-range interactions that break SU(4) spin-valley invariance. Our approach explains the experimental finding that gaps at odd numerators are weak for 1<|ν|<2 and strong for 0<|ν|<1. We find that in the SU(4) invariant case the incompressible ground state at |ν|=1/3 is a three-component incompressible state, not the Laughlin state, and discuss the competition between these two states in the presence of SU(4) spin-valley symmetry-breaking terms.

Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene

We investigate low-temperature magneto-transport in recently developed, high-quality multiterminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect with different states that are either fully developed, and exhibit a clear plateau in the transverse resistance with a concomitant dip in longitudinal resistance or incipient, and exhibit only a longitudinal resistance minimum. All observed states scale as a function of filling factor ν, as expected. An unprecedented even-denominator fractional state is observed at ν = -1/2 on the hole side, exhibiting a clear plateau in Rxy quantized at the expected value of 2h/e(2) with a precision of ∼0.5%. Many of our observations, together with a recent electronic compressibility measurement performed in graphene bilayers on hexagonal boron-nitride (hBN) substrates, are consistent with a recent theory that accounts for the effect of the degeneracy between the N = 0 and N = 1 Landau levels in the fractional quantum Hall effect and predicts the occurrence of a Moore-Read type ν = -1/2 state. Owing to the experimental flexibility of bilayer graphene, which has a gate-dependent band structure, can be easily accessed by scanning probes, and can be contacted with materials such as superconductors, our findings offer new possibilities to explore the microscopic nature of even-denominator fractional quantum Hall effect.

Topological phases in the zeroth Landau level of bilayer graphene

We analyze the phase diagram of the zeroth Landau level of bilayer graphene, taking into account the realistic effects of screening of the Coulomb interaction and strong mixing between two degenerate sublevels. We identify robust quantum Hall states at filling factors ν=-1, -4/3, -5/3, -8/5, -1/2 and discuss the nature of their ground states, collective excitations, and relation to the more familiar states in GaAs using a tractable model. In particular, we present evidence that the ν=-1/2 state is non-Abelian and described by either the Moore-Read wave function or its particle-hole conjugate, while ruling out other candidates such as the 331 state.

Enigmatic 4/11 state: a prototype for unconventional fractional quantum Hall effect

The origin of the fractional quantum Hall effect (FQHE) at 4/11 and 5/13 has remained controversial. We make a compelling case that the FQHE is possible here for fully spin polarized composite fermions, but with an unconventional underlying physics. Thanks to a rather unusual interaction between composite fermions, the FQHE here results from the suppression of pairs with a relative angular momentum of three rather than one, confirming the exotic mechanism proposed by Wójs, Yi, and Quinn [Phys. Rev. B 69, 205322 (2004)]. We predict that the 4/11 state reported a decade ago by Pan et al. [Phys. Rev. Lett. 90, 016801 (2003)] is a conventional partially spin polarized FQHE of composite fermions, and we estimate the Zeeman energy where a phase transition into the unconventional fully spin polarized state will occur.