Identifying magnetic anisotropy of the topological surface state of Cr(0.05)Sb(1.95)Te(3) with spin-polarized STM

Gap-like feature observed in the non-magnetic topological insulators

Non-magnetic gap at the Dirac point of topological insulators remains an open question in the field. Here, we present angle-resolved photoemission spectroscopy experiments performed on Cr-doped Bi₂Se₃ and showed that the Dirac point is progressively buried by the bulk bands and a low spectral weight region in the vicinity of the Dirac point appears. These two mechanisms lead to spectral weight suppression region being mistakenly identified as an energy gap in earlier studies. We further calculated the band structure and found that the original Dirac point splits into two nodes due to the impurity resonant states and the energy separation between the nodes is the low density of state region which appears to be like an energy gap in potoemission experiments. We supported our arguments by presenting photoemission experiments carried out with on- and off- resonant photon energies. Our observation resolves the widely debated questions of apparent energy gap opening at the Dirac point without long range ferromagnetic order in topological insulators.

Magnetic and defect probes of the SmB6 surface state

The impact of nonmagnetic and magnetic impurities on topological insulators is a central focus concerning their fundamental physics and possible spintronics and quantum computing applications. Combining scanning tunneling spectroscopy with transport measurements, we investigate, both locally and globally, the effect of nonmagnetic and magnetic substituents in SmB₆, a predicted topological Kondo insulator. Around the so-introduced substitutents and in accord with theoretical predictions, the surface states are locally suppressed with different length scales depending on the substituent's magnetic properties. For sufficiently high substituent concentrations, these states are globally destroyed. Similarly, using a magnetic tip in tunneling spectroscopy also resulted in largely suppressed surface states. Hence, a destruction of the surface states is always observed close to atoms with substantial magnetic moment. This points to the topological nature of the surface states in SmB₆ and illustrates how magnetic impurities destroy the surface states from microscopic to macroscopic length scales.

Transport theory for electrical detection of the spin-momentum locking of topological surface states

We provide a general transport theory for spin-polarized scanning tunneling microscopy (STM) through a doped topological insulator (TI) surface. It is found that different from the conventional magnetic substrate, the tunneling conductance through the tip-TI surface acquires an extra component determined by the in-plane spin texture, exclusively associated with the spin momentum locking. Importantly, this extra conductance unconventionally depends on the spatial azimuthal angle of the magnetized STM tip. By introducing a magnetic impurity to break the symmetry of rotation and local time reversal of the TI surface, we find that the measurement of the spatial resolved conductance can reconstruct the helical structure of spin texture, from which the spin-momentum locking angle can be extracted if the in-plane magnetization is induced purely by the spin-orbit coupling of surface Dirac electrons. Our theory offers an alternative way, differing from existing in-plane-current polarization probed in a multi-terminal setup or angle resolved photoemission spectroscopy, to electrically identify the helical spin texture on TI surfaces.

Dual nature of magnetic dopants and competing trends in topological insulators

Topological insulators interacting with magnetic impurities have been reported to host several unconventional effects. These phenomena are described within the framework of gapping Dirac quasiparticles due to broken time-reversal symmetry. However, the overwhelming majority of studies demonstrate the presence of a finite density of states near the Dirac point even once topological insulators become magnetic. Here, we map the response of topological states to magnetic impurities at the atomic scale. We demonstrate that magnetic order and gapless states can coexist. We show how this is the result of the delicate balance between two opposite trends, that is, gap opening and emergence of a Dirac node impurity band, both induced by the magnetic dopants. Our results evidence a more intricate and rich scenario with respect to the once generally assumed, showing how different electronic and magnetic states may be generated and controlled in this fascinating class of materials.

Magnetic impurities break time reversal symmetry in topological insulators, but there has been disagreement between theory and experiment. Here, the authors study the response of topological states to magnetic dopants at the atomic level and show that, contrary to what generally believed, magnetic order and gapless states can coexist.

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3

Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)₂Te₃ system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)₂Te₃ using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.

Magnetically doped topological insulators may exhibit exotic transport phenomena such as the quantum anomalous Hall effect, however the underlying mechanisms of ferromagnetic order are currently debated. Here, the authors reveal stabilized ferromagnetism in Cr-doped (Sb,Bi)₂Te₃ mediated by Te and Sb p-hole carriers.

Three-dimensional mapping of single-atom magnetic anisotropy

Magnetic anisotropy plays a key role in the magnetic stability and spin-related quantum phenomena of surface adatoms. It manifests as angular variations of the atom's magnetic properties. We measure the spin excitations of individual Fe atoms on a copper nitride surface with inelastic electron tunneling spectroscopy. Using a three-axis vector magnet we rotate the magnetic field and map out the resulting variations of the spin excitations. We quantitatively determine the three-dimensional distribution of the magnetic anisotropy of single Fe atoms by fitting the spin excitation spectra with a spin Hamiltonian. This experiment demonstrates the feasibility of fully mapping the vector magnetic properties of individual spins and characterizing complex three-dimensional magnetic systems.

Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3

To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship [Formula: see text] is confirmed throughout and exhibits an electron-dopant interaction energy J* = 145 meV·nm(2). These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

Scanning tunneling microscopy studies of topological insulators

Scanning tunneling microscopy (STM), with surface sensitivity, is an ideal tool to probe the intriguing properties of the surface state of topological insulators (TIs) and topological crystalline insulators (TCIs). We summarize the recent progress on those topological phases revealed by STM studies. STM observations have directly confirmed the existence of the topological surface states and clearly revealed their novel properties. We also discuss STM work on magnetic doped TIs, topological superconductors and crystalline symmetry-protected surface states in TCIs. The studies have greatly promoted our understanding of the exotic properties of the new topological phases, as well as put forward new challenges. STM will continue to play an important role in this rapidly growing field from the point view of both fundamental physics and applications.