ν=5/2 fractional quantum Hall state in the presence of alloy disorder

Disorder-Driven Transition in the ν=5/2 Fractional Quantum Hall Effect

The fractional quantum Hall (FQH) effect at the filling number ν=5/2 is a primary candidate for non-Abelian topological order, while the fate of such a state in the presence of random disorder has not been resolved. We address this open question by implementing an unbiased diagnosis based on numerical exact diagonalization. We calculate the disorder averaged Hall conductance and the associated statistical distribution of the topological invariant Chern number, which unambiguously characterize the disorder-driven collapse of the FQH state. As the disorder strength increases towards a critical value, a continuous phase transition is detected based on the disorder configuration averaged wave function fidelity and the entanglement entropy. In the strong disorder regime, we identify a composite Fermi liquid phase with fluctuating Chern numbers, in striking contrast to the well-known ν=1/3 case where an Anderson insulator appears. Interestingly, the lowest Landau level projected a local density profile, the wave function overlap, and the entanglement entropy as a function of disorder strength simultaneously signal an intermediate phase, which may be relevant to the recent proposal of a particle-hole Pfaffian state or Pfaffian-anti-Pfaffian puddle state.

Primary thermometry triad at 6 mK in mesoscopic circuits

Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behaviour, the challenge in cooling the electrons impedes their potential. The strong coupling of such micrometre-scale devices with the measurement lines, combined with the weak coupling to the substrate, makes them extremely difficult to thermalize below 10 mK and imposes in situ thermometers. Here we demonstrate electronic quantum transport at 6 mK in micrometre-scale mesoscopic circuits. The thermometry methods are established by the comparison of three in situ primary thermometers, each involving a different underlying physics. The employed combination of quantum shot noise, quantum back action of a resistive circuit and conductance oscillations of a single-electron transistor covers a remarkably broad spectrum of mesoscopic phenomena. The experiment, performed in vacuum using a standard cryogen-free dilution refrigerator, paves the way towards the sub-millikelvin range with additional thermalization and refrigeration techniques.

Mesoscopic electrical circuits are an ideal platform to explore quantum phenomena, but this requires cooling the electrons to very low temperature, which is challenging. Here, the authors employ three different in situ thermometers to report electronic quantum transport at 6mK in a micrometer-scale circuit.

MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10(6) cm(2)/Vs

The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10⁶ cm²/Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials.

Fractional Quantum Hall States in a Ge Quantum Well

Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We analyze the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long-range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarized Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.

Recent experimental progress of fractional quantum Hall effect: 5/2 filling state and graphene

The phenomenon of fractional quantum Hall effect (FQHE) was first experimentally observed 33 years ago. FQHE involves strong Coulomb interactions and correlations among the electrons, which leads to quasiparticles with fractional elementary charge. Three decades later, the field of FQHE is still active with new discoveries and new technical developments. A significant portion of attention in FQHE has been dedicated to filling factor 5/2 state, for its unusual even denominator and possible application in topological quantum computation. Traditionally, FQHE has been observed in high-mobility GaAs heterostructure, but new materials such as graphene also open up a new area for FQHE. This review focuses on recent progress of FQHE at 5/2 state and FQHE in graphene.