Electronic reconstruction at the isopolar LaTiO(3)/LaFeO(3) interface: an X-ray photoemission and density-functional theory study

LaOMS2 (M = Ti, V, and Cr): novel crystal spin valves without contact

2D materials are widely investigated for application in nanodevices and spintronics. Here, we demonstrate that a family of structures, LaOMS2 (M = Ti, V, and Cr), where a La2O2 layer is sandwiched between two magnetic MS2 layers, are suitable to be used as spin valves without contact. We show that they are stable and exhibit unique magnetic and electronic properties. We find that (1) each MS2 layer is ferromagnetic with the magnetic moment mainly contributed by the M ion and the coupling between the two MS2 layers in one structure is negligible due to the blocking of the La2O2 layer; (2) LaOMS2 can be a half-metal in the ferromagnetic (FM) state and a conductor in the interlayer antiferromagnetic (inter-AFM) state, and the total energies of the two states are almost identical; (3) the magnetic properties and exchange energy can be effectively controlled by contacting with other materials; and (4) a 100% spin current is achieved in FM LaOMS2. Our results provide not only novel structures for practical application in spintronics, but also strategies for designing new devices.

Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer

The d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO₃/LaTiO₃ heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO₃ to LaCoO₃. This triggers destabilisation of the CoO₆ octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO₃. Tuned by the thickness of LaTiO₃, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.

Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon

Epitaxial growth of SrTiO₃ (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO₃ /LaFeO₃ SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni 3 d x 2 - y 2 orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO₃ SL epitaxially strained to DyScO₃ substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform.

Hole-Trapping-Induced Stabilization of Ni4 + in SrNiO3 /LaFeO3 Superlattices

Creating new functionality in materials containing transition metals is predicated on the ability to control the associated charge states. For a given transition metal, there is an upper limit on valence that is not exceeded under normal conditions. Here, it is demonstrated that this limit of 3+ for Ni and Fe can be exceeded via synthesis of (SrNiO₃ )_m /(LaFeO₃ )_n superlattices by tuning n and m. The Goldschmidt tolerance constraints are lifted, and SrNi⁴⁺ O₃ with holes on adjacent O anions is stabilized as a perovskite at the single-unit-cell level (m = 1). Holding m = 1, spectroscopy reveals that the n = 1 superlattice contains Ni³⁺ and Fe⁴⁺ , whereas Ni⁴⁺ and Fe³⁺ are observed in the n = 5 superlattice. It is revealed that the B-site cation valences can be tuned by controlling the magnitude of the FeO₆ octahedral rotations, which, in turn, determine the energy balance between Ni³⁺ /Fe⁴⁺ and Ni⁴⁺ /Fe³⁺ , thus controlling emergent electrical properties such as the band alignment and resulting hole confinement. This approach can be extended to other systems for synthesizing novel, metastable layered structures with new functionalities.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

Polarity and Spin-Orbit Coupling Induced Strong Interfacial Exchange Coupling: An Asymmetric Charge Transfer in Iridate-Manganite Heterostructure

Charge transfer is of particular importance in manipulating the interface physics in transition-metal oxide heterostructures. In this work, we have fabricated epitaxial bilayers composed of polar 3d LaMnO₃ and nonpolar 5d SrIrO₃. Systematic magnetic measurements reveal an unexpectedly large exchange bias effect in the bilayer, together with a dramatic enhancement of the coercivity of LaMnO₃. Based on first-principle calculations and X-ray absorption spectroscopy measurements, such a strong interfacial magnetic coupling is found closely associated with the polar nature of LaMnO₃ and the strong spin-orbit interaction in SrIrO₃, which collectively drive an asymmetric interfacial charge transfer and lead to the emergence of an interfacial reentrant spin/superspin glass state. Our study provides a new insight into the charge transfer in transition-metal oxide heterostructures and offers a novel means to tune the interfacial exchange coupling for a variety of device applications.

Interfacial Engineering of Ferromagnetism in Epitaxial Manganite/Ruthenate Superlattices via Interlayer Chemical Doping

Interfacial charge transfer and structural proximity effects are the two essential routes to trigger and tune numerous functionalities of perovskite oxide heterostructures. However, the cooperation and competition of these two interfacial effects in one epitaxial system have not been fully understood. Herein, we fabricate a series of La_0.67Ca_0.33MnO₃/CaRuO₃ superlattices and introduce various chemical doping in the nonmagnetic CaRuO₃ interlayers. We found that Ti, Sr, and La doping in the CaRuO₃ layer can effectively tune the interfacial charge transfer and octahedral rotation, thus modulating the ferromagnetism of the superlattices. Specifically, the B-site Ti doping depletes the Ru 4d band and suppresses the interfacial charge transfer, leading to a decay of ferromagnetic Curie temperature ( T_C). In contrast, the A-site Sr doping maintains a sizable charge transfer and meanwhile suppresses the octahedral rotation, which facilitates ferromagnetism and significantly enhances the T_C up to 291 K. The La doping turns out to localize the itinerant electrons in the CaRuO₃ layer, which suppresses both the interfacial charge transfer and ferromagnetism. The observed intriguing interfacial engineering of magnetism would pave a new way to understand the collective effects of interfacial charge transfer and structural proximity on the physical properties of oxide heterostructures.

Antisite-disorder engineering in La-based oxide heterostructures via oxygen vacancy control

It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces - the first and the last being the two key players. In order to delineate the roles of these two key factors, we have investigated the effect of oxygen vacancies on the antisite disorder at a large number of interfaces separating two La-based transition metal oxides, using density functional theory. The oxygen vacancy is found to suppress antisite disorder in some heterostructures thereby stabilizing the ordered structure, while in some others, it tends to favor disorder, opening up the possibility of using it to control the order. Our calculations show that the oxygen vacancy offers an opportunity to generate new magnetic states by manipulating the inter-site coupling. Moreover, it can be used to control the electrical transport. The oxygen vacancy and antisite disorder are intrinsic to oxide heterostructures and it is therefore incumbent to engineer the latter and tune the magnetic and transport properties by controlling the oxygen partial pressure during growth.

Design of new Mott multiferroics via complete charge transfer: promising candidates for bulk photovoltaics

Optimal materials to induce bulk photovoltaic effects should lack inversion symmetry and have an optical gap matching the energies of visible radiation. Ferroelectric perovskite oxides such as BaTiO₃ and PbTiO₃ exhibit substantial polarization and stability, but have the disadvantage of excessively large band gaps. We use both density functional theory and dynamical mean field theory calculations to design a new class of Mott multiferroics–double perovskite oxides A₂VFeO₆ (A = Ba, Pb, etc). While neither perovskite AVO₃ nor AFeO₃ is ferroelectric, in the double perovskite A₂VFeO₆ a ‘complete’ charge transfer from V to Fe leads to a non-bulk-like charge configuration–an empty V-d shell and a half-filled Fe-d shell, giving rise to a polarization comparable to that of ferroelectric ATiO₃. Different from nonmagnetic ATiO₃, the new double perovskite oxides have an antiferromagnetic ground state and around room temperatures, are paramagnetic Mott insulators. Most importantly, the V d⁰ state significantly reduces the band gap of A₂VFeO₆, making it smaller than that of ATiO₃ and BiFeO₃ and rendering the new multiferroics a promising candidate to induce bulk photovoltaic effects.

Charge transfer driven emergent phenomena in oxide heterostructures

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO3 Photocathodes

The development of tandem devices for water photosplitting requires the preparation of photocathodic materials based on earth-abundant elements that show long-term stability in aqueous electrolytes. Ternary metal oxides seem to be a viable option, among which perovskites stand out. In this context, transparent and compact LaFeO₃ thin-film electrodes have been prepared by a sol-gel process, both undoped and doped with metals (M) such as Mg or Zn. Pristine electrodes support the development of cathodic photocurrents in 0.1 m NaOH aqueous solutions, particularly in the presence of oxygen, with an onset potential as high as 1.4 V versus the reversible hydrogen electrode. Doping with Mg or Zn leads to an important enhancement of the photocurrent, which peaks for a stoichiometry of LaFe_0.95 M_0.05 O₃ with a sixfold enhancement with respect to the pristine material. Such an improvement is attributed to an increase in both the density and mobility of the majority carriers, although a contribution of surface passivation cannot be excluded.

Interface Structure, Band Alignment, and Built-In Potentials at LaFeO_{3}/n-SrTiO_{3} Heterojunctions

Interface structure at polar-nonpolar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO_{3}/n-SrTiO_{3} system. We demonstrate via high-energy-resolution x-ray photoemission that epitaxial LaFeO_{3}/n-SrTiO_{3}(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO_{3} films. However, differences in the potential gradient within the SrTiO_{3} layer depending on polarity may promote hole diffusion into LaFeO_{3} for applications in photocatalysis.

Inversion of Ferrimagnetic Magnetization by Ferroelectric Switching via a Novel Magnetoelectric Coupling

Although several multiferroic materials or heterostructures have been extensively studied, finding strong magnetoelectric couplings for the electric field control of the magnetization remains challenging. Here, a novel interfacial magnetoelectric coupling based on three components (ferroelectric dipole, magnetic moment, and antiferromagnetic order) is analytically formulated. As an extension of carrier-mediated magnetoelectricity, the new coupling is shown to induce an electric-magnetic hysteresis loop. Realizations employing BiFeO_{3} bilayers grown along the [111] axis are proposed. Without involving magnetic phase transitions, the magnetization orientation can be switched by the carrier modulation driven by the field effect, as confirmed using first-principles calculations.

Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces

At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more complex electronic structure, with charge, orbital and/or spin orders arising from strong Coulomb interactions between transition metal and oxygen ions. Such electronic correlations offer a rich playground to engineer functional interfaces but their compatibility with the classical band alignment picture remains an open question. Here we show that beyond differences in electron affinities and polar effects, a key parameter determining charge transfer at correlated oxide interfaces is the energy required to alter the covalence of the metal-oxygen bond. Using the perovskite nickelate (RNiO3) family as a template, we probe charge reconstruction at interfaces with gadolinium titanate GdTiO3. X-ray absorption spectroscopy shows that the charge transfer is thwarted by hybridization effects tuned by the rare-earth (R) size. Charge transfer results in an induced ferromagnetic-like state in the nickelate, exemplifying the potential of correlated interfaces to design novel phases. Further, our work clarifies strategies to engineer two-dimensional systems through the control of both doping and covalence.

Infrared optical absorption in low-spin Fe(2+)-doped SrTiO3

Band gap engineering in SrTiO3 and related titanate perovskites has long been explored due to the intriguing properties of the materials for photocatalysis and photovoltaic applications. A popular approach in the materials chemistry community is to substitutionally dope aliovalent transition metal ions onto the B site in the lattice to alter the valence band. However, in such a scheme there is limited control over the dopant valence, and compensating defects often form. Here we demonstrate a novel technique to controllably synthesize Fe(2+)- and Fe(3+)-doped SrTiO3 thin films without formation of compensating defects by co-doping with La(3+) ions on the A site. We stabilize Fe(2+)-doped films by doping with two La ions for every Fe dopant, and find that the Fe ions exhibit a low-spin electronic configuration, producing optical transitions in the near infrared regime and degenerate doping. The novel electronic states observed here offer a new avenue for band gap engineering in perovskites for photocatalytic and photovoltaic applications.

Engineered Mott ground state in a LaTiO(3+δ)/LaNiO3 heterostructure

In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO₃ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging from interfacial charge transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of a correlated metal LaNiO₃ and a doped Mott insulator LaTiO_3+δ, and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibits interfacial charge transfer from Ti to Ni sites, giving rise to an insulating ground state with orbital polarization and e_g orbital band splitting. Our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states.

Interfaces between two dissimilar transition metal oxides can exhibit emergent strongly correlated electronic and magnetic states due to charge transfer and electronic reconfiguration. Here, the authors synthesize and investigate an exotic Mott ground state in LaTiO_3+δ/LaNiO₃ heterostructures.

High-T(c) Superconductivity at the Interface between the CaCuO2 and SrTiO3 Insulating Oxides

At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the interface between insulating oxides, although, until now, with very low T(c). We report the occurrence of high T(c) superconductivity in the bilayer CaCuO(2)/SrTiO(3), where both the constituent oxides are insulating. In order to obtain a superconducting state, the CaCuO(2)/SrTiO(3) interface must be realized between the Ca plane of CaCuO(2) and the TiO(2) plane of SrTiO(3). Only in this case can oxygen ions be incorporated in the interface Ca plane, acting as apical oxygen for Cu and providing holes to the CuO(2) planes. A detailed hole doping spatial profile can be obtained by scanning transmission electron microscopy and electron-energy-loss spectroscopy at the O K edge, clearly showing that the (super)conductivity is confined to about 1-2 CaCuO(2) unit cells close to the interface with SrTiO(3). The results obtained for the CaCuO(2)/SrTiO(3) interface can be extended to multilayered high T(c) cuprates, contributing to explaining the dependence of T(c) on the number of CuO(2) planes in these systems.

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp and exhibits a high electron mobility exceeding 60,000 cm(2) V(-1) s(-1) at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.