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Yang Z, Jin KJ, Gan Y, Ma C, Zhong Z, Yuan Y, Ge C, Guo EJ, Wang C, Xu X, He M, Zhang D, Yang G. Photoinduced Phase Transition in Infinite-Layer Nickelates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304146. [PMID: 37356048 DOI: 10.1002/smll.202304146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Revised: 06/15/2023] [Indexed: 06/27/2023]
Abstract
The quantum phase transition caused by regulating the electronic correlation in strongly correlated quantum materials has been a research hotspot in condensed matter science. Herein, a photon-induced quantum phase transition from the Kondo-Mott insulating state to the low temperature metallic one accompanying with the magnetoresistance changing from negative to positive in the infinite-layer NdNiO2 films is reported, where the antiferromagnetic coupling among the Ni1+ localized spins and the Kondo effect are effectively suppressed by manipulating the correlation of Ni-3d and Nd-5d electrons under the photoirradiation. Moreover, the critical temperature Tc of the superconducting-like transition exhibits a dome-shaped evolution with the maximum up to ≈42 K, and the electrons dominate the transport process proved by the Hall effect measurements. These findings not only make the photoinduction a promising way to control the quantum phase transition by manipulating the electronic correlation in Mott-like insulators, but also shed some light on the possibility of the superconducting in electron-doped nickelates.
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Affiliation(s)
- Zhen Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yulin Gan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ye Yuan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxiang Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
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2
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Gate-tuned anomalous Hall effect driven by Rashba splitting in intermixed LaAlO 3/GdTiO 3/SrTiO 3. Sci Rep 2021; 11:10726. [PMID: 34021190 PMCID: PMC8140084 DOI: 10.1038/s41598-021-89767-3] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2020] [Accepted: 04/28/2021] [Indexed: 11/25/2022] Open
Abstract
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behaviour of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic fields lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities.
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3
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Guo L, Yan Y, Xu R, Li J, Zeng C. Zero-Bias Conductance Peaks Effectively Tuned by Gating-Controlled Rashba Spin-Orbit Coupling. PHYSICAL REVIEW LETTERS 2021; 126:057701. [PMID: 33605741 DOI: 10.1103/physrevlett.126.057701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2020] [Revised: 07/27/2020] [Accepted: 12/23/2020] [Indexed: 06/12/2023]
Abstract
Zero-bias conductance peaks (ZBCPs) can manifest a number of notable physical phenomena and thus provide critical characteristics to the underlying electronic systems. Here, we report observations of pronounced ZBCPs in hybrid junctions composed of an oxide heterostructure LaAlO_{3}/SrTiO_{3} and an elemental superconductor Nb, where the two-dimensional electron system (2DES) at the LaAlO_{3}/SrTiO_{3} interface is known to accommodate gate-tunable Rashba spin-orbit coupling (SOC). Remarkably, the ZBCPs exhibit a domelike dependence on the gate voltage, which correlates strongly with the nonmonotonic gate dependence of the Rashba SOC in the 2DES. The origin of the observed ZBCPs can be attributed to the reflectionless tunneling effect of electrons that undergo phase-coherent multiple Andreev reflection, and their gate dependence can be explained by the enhanced quantum coherence time of electrons in the 2DES with increased momentum separation due to SOC. We further demonstrate theoretically that, in the presence of a substantial proximity effect, the Rashba SOC can directly enhance the overall Andreev conductance in the 2DES-barrier-superconductor junctions. These findings not only highlight nontrivial interplay between electron spin and superconductivity revealed by ZBCPs, but also set forward the study of superconducting hybrid structures by means of controllable SOC, which has significant implications in various research fronts from superconducting spintronics to topological superconductivity.
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Affiliation(s)
- Linhai Guo
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yuedong Yan
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Rongge Xu
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
- School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Jian Li
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
- School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Changgan Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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4
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Lebedev N, Stehno M, Rana A, Gauquelin N, Verbeeck J, Brinkman A, Aarts J. Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO 3/SrTiO 3 interfaces. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 33:055001. [PMID: 33169729 DOI: 10.1088/1361-648x/abc102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, transmission electron microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the two-dimensional electron gas usually observed at interfaces between STO and LTO or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates the presence of spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.
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Affiliation(s)
- N Lebedev
- Huygens-Kamerlingh Onnes Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden, The Netherlands
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5
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Volkov PA, Chandra P. Multiband Quantum Criticality of Polar Metals. PHYSICAL REVIEW LETTERS 2020; 124:237601. [PMID: 32603164 DOI: 10.1103/physrevlett.124.237601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2020] [Accepted: 05/27/2020] [Indexed: 06/11/2023]
Abstract
Motivated by recent experimental realizations of polar metals with broken inversion symmetry, we explore the emergence of strong correlations driven by criticality when the polar transition temperature is tuned to zero. Overcoming previously discussed challenges, we demonstrate a robust mechanism for coupling between the critical mode and electrons in multiband metals. We identify and characterize several novel interacting phases, including non-Fermi liquids, when band crossings are close to the Fermi level and present their experimental signatures for three generic types of band crossings.
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Affiliation(s)
- Pavel A Volkov
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA
| | - Premala Chandra
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA
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6
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Choe D, Jin MJ, Kim SI, Choi HJ, Jo J, Oh I, Park J, Jin H, Koo HC, Min BC, Hong S, Lee HW, Baek SH, Yoo JW. Gate-tunable giant nonreciprocal charge transport in noncentrosymmetric oxide interfaces. Nat Commun 2019; 10:4510. [PMID: 31586096 PMCID: PMC6778138 DOI: 10.1038/s41467-019-12466-1] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2018] [Accepted: 09/06/2019] [Indexed: 11/09/2022] Open
Abstract
A polar conductor, where inversion symmetry is broken, may exhibit directional propagation of itinerant electrons, i.e., the rightward and leftward currents differ from each other, when time-reversal symmetry is also broken. This potential rectification effect was shown to be very weak due to the fact that the kinetic energy is much higher than the energies associated with symmetry breaking, producing weak perturbations. Here we demonstrate the appearance of giant nonreciprocal charge transport in the conductive oxide interface, LaAlO3/SrTiO3, where the electrons are confined to two-dimensions with low Fermi energy. In addition, the Rashba spin-orbit interaction correlated with the sub-band hierarchy of this system enables a strongly tunable nonreciprocal response by applying a gate voltage. The observed behavior of directional response in LaAlO3/SrTiO3 is associated with comparable energy scales among kinetic energy, spin-orbit interaction, and magnetic field, which inspires a promising route to enhance nonreciprocal response and its functionalities in spin orbitronics.
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Affiliation(s)
- Daeseong Choe
- School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea
| | - Mi-Jin Jin
- School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea
| | - Shin-Ik Kim
- Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Hyung-Jin Choi
- Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Junhyeon Jo
- School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea
| | - Inseon Oh
- School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea
| | - Jungmin Park
- School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea.,Center for Scientific Instrumentation, Division of Scientific Instrumentation & Management, Korea Basic Science Institute, Daejeon, 305-806, Korea
| | - Hosub Jin
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea
| | - Hyun Cheol Koo
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, Korea.,KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea
| | - Byoung-Chul Min
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, Korea.,Division of Nano and Information Technology, KIST School, Korea University of Science and Technology, Seoul, 02792, Korea
| | - Seokmin Hong
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Hyun-Woo Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Korea
| | - Seung-Hyub Baek
- Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, 02792, Korea.,Division of Nano and Information Technology, KIST School, Korea University of Science and Technology, Seoul, 02792, Korea
| | - Jung-Woo Yoo
- School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea.
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7
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Manca N, Bothner D, Monteiro AMRVL, Davidovikj D, Sağlam YG, Jenkins M, Gabay M, Steele GA, Caviglia AD. Bimodal Phase Diagram of the Superfluid Density in LaAlO_{3}/SrTiO_{3} Revealed by an Interfacial Waveguide Resonator. PHYSICAL REVIEW LETTERS 2019; 122:036801. [PMID: 30735404 DOI: 10.1103/physrevlett.122.036801] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2018] [Indexed: 06/09/2023]
Abstract
We explore the superconducting phase diagram of the two-dimensional electron system at the LaAlO_{3}/SrTiO_{3} interface by monitoring the frequencies of the cavity modes of a coplanar waveguide resonator fabricated in the interface itself. We determine the phase diagram of the superconducting transition as a function of the temperature and electrostatic gating, finding that both the superfluid density and the transition temperature follow a dome shape but that the two are not monotonically related. The ground state of this two-dimensional electron system is interpreted as a Josephson junction array, where a transition from long- to short-range order occurs as a function of the electronic doping. The synergy between correlated oxides and superconducting circuits is revealed to be a promising route to investigate these exotic compounds, complementary to standard magnetotransport measurements.
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Affiliation(s)
- Nicola Manca
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Daniel Bothner
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Ana M R V L Monteiro
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Dejan Davidovikj
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Yildiz G Sağlam
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Mark Jenkins
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Marc Gabay
- Laboratoire de Physique des Solides, Universite Paris-Sud and CNRS, Batiment 510, 91450 Orsay, France
| | - Gary A Steele
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Andrea D Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
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8
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Gariglio S, Caviglia AD, Triscone JM, Gabay M. A spin-orbit playground: surfaces and interfaces of transition metal oxides. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:012501. [PMID: 30058557 DOI: 10.1088/1361-6633/aad6ab] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Within the last twenty years, the status of the spin-orbit interaction has evolved from that of a simple atomic contribution to a key effect that modifies the electronic band structure of materials. It is regarded as one of the basic ingredients for spintronics, locking together charge and spin degrees of freedom and recently it is instrumental in promoting a new class of compounds, the topological insulators. In this review, we present the current status of the research on the spin-orbit coupling in transition metal oxides, discussing the case of two semiconducting compounds, [Formula: see text] and [Formula: see text], and the properties of surface and interfaces based on these. We conclude with the investigation of topological effects predicted to occur in different complex oxides.
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Affiliation(s)
- S Gariglio
- DQMP, University of Geneva, 24 Quai E.-Ansermet 1211, Geneva, Switzerland
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9
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Huang Z, Renshaw Wang X, Rusydi A, Chen J, Yang H, Venkatesan T. Interface Engineering and Emergent Phenomena in Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802439. [PMID: 30133012 DOI: 10.1002/adma.201802439] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Revised: 07/06/2018] [Indexed: 06/08/2023]
Abstract
Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.
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Affiliation(s)
- Zhen Huang
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Xiao Renshaw Wang
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Andrivo Rusydi
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Jingsheng Chen
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Hyunsoo Yang
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Thirumalai Venkatesan
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
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10
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Huang Q, Wang J, Lu S, Chen Y, Bai L, Dai Y, Tian Y, Yan S. Distinguishing Interface Magnetoresistance and Bulk Magnetoresistance through Rectification of Schottky Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2018; 10:24905-24909. [PMID: 29969008 DOI: 10.1021/acsami.8b06929] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface-sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of nonmagnetic In/GeO x/n-Ge and magnetic Co/GeO x/n-Ge diode-like heterojunctions. It is demonstrated that the low-field "butterfly" hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, whereas the orbit-related large nonsaturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities.
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Affiliation(s)
- Qikun Huang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
| | - Jing Wang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
| | - Shiyang Lu
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
| | - Yanxue Chen
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
| | - Youyong Dai
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
| | - Shishen Yan
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , P. R. China
- School of Physics & Electronic Engineering , Kashgar University , Kashi 844006 , P. R. China
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11
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Pai YY, Tylan-Tyler A, Irvin P, Levy J. Physics of SrTiO 3-based heterostructures and nanostructures: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036503. [PMID: 29424362 DOI: 10.1088/1361-6633/aa892d] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.
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Affiliation(s)
- Yun-Yi Pai
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America. Pittsburgh Quantum Institute, Pittsburgh, PA 15260, United States of America
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12
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Mattoni G, Baek DJ, Manca N, Verhagen N, Groenendijk DJ, Kourkoutis LF, Filippetti A, Caviglia AD. Insulator-to-Metal Transition at Oxide Interfaces Induced by WO 3 Overlayers. ACS APPLIED MATERIALS & INTERFACES 2017; 9:42336-42343. [PMID: 29111647 DOI: 10.1021/acsami.7b13202] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Interfaces between complex oxides constitute a unique playground for two-dimensional electron systems (2DESs), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by the polar field in LaAlO3 as well as by the presence of point defects, like oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decrease of the electronic mobility. In this work, we use an amorphous WO3 overlayer to obtain a high-mobility 2DES in WO3/LaAlO3/SrTiO3 heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO3 and WO3 layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm2 V-1 s-1, and quantum oscillations of conductance.
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Affiliation(s)
- Giordano Mattoni
- Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | | | - Nicola Manca
- Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Nils Verhagen
- Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | - Dirk J Groenendijk
- Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
| | | | - Alessio Filippetti
- Dipartimento di Fisica, Università di Cagliari , Cagliari, Monserrato 09042-I, Italy
- CNR-IOM, Istituto Officina dei Materiali, Cittadella Universitaria , Cagliari, Monserrato 09042-I, Italy
| | - Andrea D Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands
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13
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Cheng L, Wei L, Liang H, Yan Y, Cheng G, Lv M, Lin T, Kang T, Yu G, Chu J, Zhang Z, Zeng C. Optical Manipulation of Rashba Spin-Orbit Coupling at SrTiO 3-Based Oxide Interfaces. NANO LETTERS 2017; 17:6534-6539. [PMID: 28968111 DOI: 10.1021/acs.nanolett.7b02128] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Spin-orbit coupling (SOC) plays a crucial role for spintronics applications. Here we present the first demonstration that the Rashba SOC at the SrTiO3-based interfaces is highly tunable by photoinduced charge doping, that is, optical gating. Such optical manipulation is nonvolatile after the removal of the illumination in contrast to conventional electrostatic gating and also erasable via a warming-cooling cycle. Moreover, the SOC evolutions tuned by illuminations with different wavelengths at various gate voltages coincide with each other in different doping regions and collectively form an upward-downward trend curve: In response to the increase of conductivity, the SOC strength first increases and then decreases, which can be attributed to the orbital hybridization of Ti 3d subbands. More strikingly, the optical manipulation is effective enough to tune the interferences of Bloch wave functions from constructive to destructive and therefore to realize a transition from weak localization to weak antilocalization. The present findings pave a way toward the exploration of photoinduced nontrivial quantum states and the design of optically controlled spintronic devices.
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Affiliation(s)
- Long Cheng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Laiming Wei
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Haixing Liang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Yuedong Yan
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Guanghui Cheng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Meng Lv
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Tie Lin
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Tingting Kang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Guolin Yu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Junhao Chu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University , Shanghai 200062, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Changgan Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China
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Monteiro AMRVL, Groenendijk DJ, Manca N, Mulazimoglu E, Goswami S, Blanter Y, Vandersypen LMK, Caviglia AD. Side Gate Tunable Josephson Junctions at the LaAlO 3/SrTiO 3 Interface. NANO LETTERS 2017; 17:715-720. [PMID: 28071920 PMCID: PMC5343548 DOI: 10.1021/acs.nanolett.6b03820] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2016] [Revised: 01/07/2017] [Indexed: 05/22/2023]
Abstract
Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.
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15
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Maniv E, Dagan Y, Goldstein M. Correlation-Induced Band Competition in SrTiO3/LaAlO3. ACTA ACUST UNITED AC 2017. [DOI: 10.1557/adv.2017.92] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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16
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O'Farrell ECT, Tan JY, Yeo Y, Koon GKW, Özyilmaz B, Watanabe K, Taniguchi T. Rashba Interaction and Local Magnetic Moments in a Graphene-BN Heterostructure Intercalated with Au. PHYSICAL REVIEW LETTERS 2016; 117:076603. [PMID: 27563982 DOI: 10.1103/physrevlett.117.076603] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2016] [Indexed: 06/06/2023]
Abstract
We intercalate a van der Waals heterostructure of graphene and hexagonal boron nitride with Au, by encapsulation, and show that the Au at the interface is two dimensional. Charge transfer upon current annealing indicates the redistribution of the Au and induces splitting of the graphene band structure. The effect of an in-plane magnetic field confirms that the splitting is due to spin splitting and that the spin polarization is in the plane, characteristic of a Rashba interaction with a magnitude of approximately 25 meV. Consistent with the presence of an intrinsic interfacial electric field we show that the splitting can be enhanced by an applied displacement field in dual gated samples. A giant negative magnetoresistance, up to 75%, and a field induced anomalous Hall effect at magnetic fields <1 T are observed. These demonstrate that the hybridized Au has a magnetic moment and suggests the proximity to the formation of a collective magnetic phase. These effects persist close to room temperature.
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Affiliation(s)
- E C T O'Farrell
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore and Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - J Y Tan
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore and Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Y Yeo
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore and Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - G K W Koon
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore and Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - B Özyilmaz
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore and Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - K Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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17
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Han K, Palina N, Zeng SW, Huang Z, Li CJ, Zhou WX, Wan DY, Zhang LC, Chi X, Guo R, Chen JS, Venkatesan T, Rusydi A, Ariando A. Controlling Kondo-like Scattering at the SrTiO3-based Interfaces. Sci Rep 2016; 6:25455. [PMID: 27147407 PMCID: PMC4857089 DOI: 10.1038/srep25455] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2016] [Accepted: 04/13/2016] [Indexed: 11/08/2022] Open
Abstract
The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti(3+) ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti(3+) ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface.
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Affiliation(s)
- K. Han
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - N. Palina
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, Singapore 117603, Singapore
| | - S. W. Zeng
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Z. Huang
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
| | - C. J. Li
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
| | - W. X. Zhou
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - D.-Y. Wan
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - L. C. Zhang
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - X. Chi
- Singapore Synchrotron Light Source, National University of Singapore, Singapore 117603, Singapore
| | - R. Guo
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Material Science & Engineering, National University of Singapore, Singapore 117575, Singapore
| | - J. S. Chen
- Department of Material Science & Engineering, National University of Singapore, Singapore 117575, Singapore
| | - T. Venkatesan
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Material Science & Engineering, National University of Singapore, Singapore 117575, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
- National University of Singapore Graduate School for Integrative Sciences and Engineering (NGS), 28 Medical Drive, Singapore 117456, Singapore
| | - A. Rusydi
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, Singapore 117603, Singapore
| | - A Ariando
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- National University of Singapore Graduate School for Integrative Sciences and Engineering (NGS), 28 Medical Drive, Singapore 117456, Singapore
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18
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Strong correlations elucidate the electronic structure and phase diagram of LaAlO3/SrTiO3 interface. Nat Commun 2015; 6:8239. [PMID: 26359206 PMCID: PMC4647855 DOI: 10.1038/ncomms9239] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2015] [Accepted: 07/30/2015] [Indexed: 11/08/2022] Open
Abstract
The interface between the two band insulators SrTiO3 and LaAlO3 has the unexpected properties of a two-dimensional electron gas. It is even superconducting with a transition temperature, T(c), that can be tuned using gate bias V(g), which controls the number of electrons added or removed from the interface. The gate bias-temperature (V(g), T) phase diagram is characterized by a dome-shaped region where superconductivity occurs, that is, T(c) has a non-monotonic dependence on V(g), similar to many unconventional superconductors. Here, we report, the frequency of the quantum resistance-oscillations versus inverse magnetic field for various V(g). This frequency follows the same non-monotonic behaviour as T(c); a similar trend is seen in the low field limit of the Hall coefficient. We theoretically show that electronic correlations result in a non-monotonic population of the mobile band, which can account for the experimental behaviour of the normal transport properties and the superconducting dome.
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