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Guo Z, Wang J, Hu K, Shan Y. Role of Coulomb blockade in nonlinear transport of conducting polymers. NANOTECHNOLOGY 2024; 35:355201. [PMID: 38154133 DOI: 10.1088/1361-6528/ad1944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
NonlinearI-Vcharacteristics associated with Coulomb blockade (CB) in conducting polymers were systematically investigated. At low temperatures, a crossover from Ohmic to nonlinear behavior was observed, along with drastically enhanced noise in differential conductance right from the crossover. The fluctuation can be well explained by the Coulombic oscillation in the collective percolation system, where the charge transport is related to the Coulombic charging energy between crystalline domains. Furthermore, a distinct quantum conductance, the fingerprint of CB caused by the individual tunneling between crystalline grains, was observed in sub-100 nm devices, confirming a strong association between nonlinearI-Vcharacteristics and CB effect.
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Affiliation(s)
- Zean Guo
- State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Jiawei Wang
- State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Ke Hu
- State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Yu Shan
- State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
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2
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Wang J, Liu D, Yu L, Liu F, Niu J, Yang G, Lu C, Lu N, Li L, Liu M. Collective Transport for Nonlinear Current-Voltage Characteristics of Doped Conducting Polymers. PHYSICAL REVIEW LETTERS 2023; 130:177001. [PMID: 37172249 DOI: 10.1103/physrevlett.130.177001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2021] [Revised: 09/26/2022] [Accepted: 04/03/2023] [Indexed: 05/14/2023]
Abstract
Origin of nonlinear transport phenomena in conducting polymers has long been a topic of intense controversies. Most previous knowledge has attributed the macroscopic nonlinear I-V characteristics to individual behaviors of elementary resistors in the network. In this Letter, we show via a systematic dimensionality-dependent transport investigation, that understanding the nonlinear transport in conducting polymers must include the collective transport effect in a percolation network. The possible mediation of percolation threshold p_{c} by controlling the samples' dimensionality unveiled the collective effect in growth of percolation paths driven by electric field, enabling us to draw a smooth connection between two typically observed nonlinear phenomena, dissipative tunnelinglike and threshold-limited transport, which have been controversial for years. The possible microscopic origins of the collective transport are discussed within the Coulomb blockade theory.
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Affiliation(s)
- Jiawei Wang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dongyang Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lishuai Yu
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Feilong Liu
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Jiebin Niu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
| | - Guanhua Yang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
| | - Congyan Lu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
| | - Nianduan Lu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
| | - Ling Li
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ming Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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4
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Wang J, Niu J, Shao B, Yang G, Lu C, Li M, Zhou Z, Chuai X, Chen J, Lu N, Huang B, Wang Y, Li L, Liu M. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. Nat Commun 2021; 12:58. [PMID: 33397910 PMCID: PMC7782818 DOI: 10.1038/s41467-020-20238-5] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2020] [Accepted: 11/05/2020] [Indexed: 12/03/2022] Open
Abstract
Organic conjugated polymers demonstrate great potential in transistors, solar cells and light-emitting diodes, whose performances are fundamentally governed by charge transport. However, the morphology-property relationships and the underpinning charge transport mechanisms remain unclear. Particularly, whether the nonlinear charge transport in conducting polymers is appropriately formulated within non-Fermi liquids is not clear. In this work, via varying crystalline degrees of samples, we carry out systematic investigations on the charge transport nonlinearity in conducting polymers. Possible charge carriers' dimensionality is discussed when varying the molecular chain's crystalline orders. A heterogeneous-resistive-network (HRN) model is proposed based on the tied-link between Fermi liquids (FL) and Luttinger liquids (LL), related to the high-ordered crystalline zones and weak-coupled amorphous regions, respectively. The HRN model is supported by precise electrical and microstructural characterizations, together with theoretic evaluations, which well describes the nonlinear transport behaviors and provides new insights into the microstructure-correlated charge transport in organic solids.
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Affiliation(s)
- Jiawei Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jiebin Niu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Bin Shao
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen, 518110, China
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Guanhua Yang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Congyan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Mengmeng Li
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Zheng Zhou
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xichen Chuai
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jiezhi Chen
- School of Information Science and Engineering, Shandong University, Shandong, 266237, China
| | - Nianduan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Yeliang Wang
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China.
| | - Ling Li
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
| | - Ming Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
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5
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Yang G, Shao Y, Niu J, Ma X, Lu C, Wei W, Chuai X, Wang J, Cao J, Huang H, Xu G, Shi X, Ji Z, Lu N, Geng D, Qi J, Cao Y, Liu Z, Liu L, Huang Y, Liao L, Dang W, Zhang Z, Liu Y, Duan X, Chen J, Fan Z, Jiang X, Wang Y, Li L, Gao HJ, Duan X, Liu M. Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals. Nat Commun 2020; 11:659. [PMID: 32005802 PMCID: PMC6994668 DOI: 10.1038/s41467-020-14383-0] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2019] [Accepted: 12/24/2019] [Indexed: 11/09/2022] Open
Abstract
In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.
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Affiliation(s)
- Guanhua Yang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Yan Shao
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, 100081, Beijing, China
| | - Jiebin Niu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Xiaolei Ma
- School of Information Science and Engineering, Shandong University, 250100, Jinan, China
- Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Congyan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Wei Wei
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- School of Information Science and Engineering, Shandong University, 250100, Jinan, China
| | - Xichen Chuai
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Jiawei Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Jingchen Cao
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Hao Huang
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Guangwei Xu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Xuewen Shi
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Zhuoyu Ji
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Nianduan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Di Geng
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Jing Qi
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Yun Cao
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Zhongliu Liu
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Liwei Liu
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, 100081, Beijing, China
| | - Yuan Huang
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Lei Liao
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Weiqi Dang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082, Changsha, China
| | - Zhengwei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082, Changsha, China
| | - Yuan Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082, Changsha, China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082, Changsha, China
| | - Jiezhi Chen
- School of Information Science and Engineering, Shandong University, 250100, Jinan, China
| | - Zhiqiang Fan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082, Changsha, China
| | - Xiangwei Jiang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082, Changsha, China
| | - Yeliang Wang
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, 100081, Beijing, China.
| | - Ling Li
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China.
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry and California Nanosystems Institute, University of California, Los Angeles, CA, 90095, USA.
| | - Ming Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China.
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7
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Liu B, Zhu W, Gunapala SD, Stockman MI, Premaratne M. Open Resonator Electric Spaser. ACS NANO 2017; 11:12573-12582. [PMID: 29087690 DOI: 10.1021/acsnano.7b06735] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The inception of the plasmonic laser or spaser (surface plasmon amplification by stimulated emission of radiation) concept in 2003 provides a solution for overcoming the diffraction limit of electromagnetic waves in miniaturization of traditional lasers into the nanoscale. From then on, many spaser designs have been proposed. However, all existing designs use closed resonators. In this work, we use cavity quantum electrodynamics analysis to theoretically demonstrate that it is possible to design an electric spaser with an open resonator or a closed resonator with much weak feedback in the extreme quantum limit in an all-carbon platform. A carbon nanotube quantum dot plays the role of a gain element, and Coulomb blockade is observed. Graphene nanoribbons are used as the resonator, and surface plasmon polariton field distribution with quantum electrodynamics features can be observed. From an engineering perspective, our work makes preparations for integrating spasers into nanocircuits and/or photodynamic therapy applications.
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Affiliation(s)
- Bobo Liu
- Advanced Computing and Simulation Laboratory (AχL), Department of Electrical and Computer Systems Engineering, Monash University , Clayton, Victoria 3800, Australia
| | - Weiren Zhu
- Department of Electronic Engineering, Shanghai Jiao Tong University , Shanghai 200240, People's Republic of China
| | - Sarath D Gunapala
- Jet Propulsion Laboratory, California Institute of Technology , Pasadena, California 91109, United States
| | - Mark I Stockman
- Center for Nano-Optics and Department of Physics and Astronomy, Georgia State University , Atlanta, Georgia 30303, United States
| | - Malin Premaratne
- Advanced Computing and Simulation Laboratory (AχL), Department of Electrical and Computer Systems Engineering, Monash University , Clayton, Victoria 3800, Australia
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