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Xiang F, Gupta A, Chaves A, Krix ZE, Watanabe K, Taniguchi T, Fuhrer MS, Peeters FM, Neilson D, Milošević MV, Hamilton AR. Intra-Zero-Energy Landau Level Crossings in Bilayer Graphene at High Electric Fields. NANO LETTERS 2023; 23:9683-9689. [PMID: 37883804 DOI: 10.1021/acs.nanolett.3c01456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
The highly tunable band structure of the zero-energy Landau level (zLL) of bilayer graphene makes it an ideal platform for engineering novel quantum states. However, the zero-energy Landau level at high electric fields has remained largely unexplored. Here we present magnetotransport measurements of bilayer graphene in high transverse electric fields. We observe previously undetected Landau level crossings at filling factors ν = -2, 1, and 3 at high electric fields. These crossings provide constraints for theoretical models of the zero-energy Landau level and show that the orbital, valley, and spin character of the quantum Hall states at high electric fields is very different from low electric fields. At high E, new transitions between states at ν = -2 with different orbital and spin polarization can be controlled by the gate bias, while the transitions between ν = 0 → 1 and ν = 2 → 3 show anomalous behavior.
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Affiliation(s)
- Feixiang Xiang
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Abhay Gupta
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Andrey Chaves
- Universidade Federal do Ceará, Departamento de Física, Caixa Postal 6030, 60455-760 Fortaleza, Ceará Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Zeb E Krix
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Michael S Fuhrer
- School of Physics and Astronomy and ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
| | - François M Peeters
- Universidade Federal do Ceará, Departamento de Física, Caixa Postal 6030, 60455-760 Fortaleza, Ceará Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - David Neilson
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Milorad V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, B-2020 Antwerp, Belgium
| | - Alexander R Hamilton
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
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2
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Geisenhof FR, Winterer F, Seiler AM, Lenz J, Zhang F, Weitz RT. Impact of Electric Field Disorder on Broken-Symmetry States in Ultraclean Bilayer Graphene. NANO LETTERS 2022; 22:7378-7385. [PMID: 36113049 DOI: 10.1021/acs.nanolett.2c02119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Bilayer graphene (BLG) has multiple internal degrees of freedom and a constant density of states down to the charge neutrality point when trigonal warping is ignored. Consequently, it is susceptible to various competing ground states. However, a coherent experimental determination of the ground state has been challenging due to the interaction-disorder interplay. Here we present an extensive transport study in a series of dually gated freestanding BLG devices and identify the layer-antiferromagnet as the ground state with a continuous strength across all devices. This strength correlates with the width of the state in the electric field. We systematically identify electric-field disorder─spatial variations in the interlayer potential difference─as the main source responsible for the observations. Our results pinpoint for the first time the importance of electric-field disorder on spontaneous symmetry breaking in BLG and solve a long-standing debate on its ground state. The electric-field disorder should be universal to all 2D materials.
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Affiliation(s)
- Fabian R Geisenhof
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Felix Winterer
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Anna M Seiler
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany
| | - Jakob Lenz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Fan Zhang
- Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - R Thomas Weitz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
- Center for Nanoscience (CeNS), Schellingstrasse 4, Munich 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstrasse 4, Munich 80799, Germany
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany
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3
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Interplay between topological valley and quantum Hall edge transport. Nat Commun 2022; 13:4187. [PMID: 35858959 PMCID: PMC9300606 DOI: 10.1038/s41467-022-31680-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2021] [Accepted: 06/21/2022] [Indexed: 11/08/2022] Open
Abstract
An established way of realising topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field, topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of high-quality suspended bilayer graphene. We find that the two-terminal conductance remains approximately constant for low magnetic fields throughout the distinct quantum Hall states since the conduction channels are traded between domain wall and device edges. For high magnetic fields, however, we observe evidence of transport suppression at the domain wall, which can be attributed to the emergence of spectral minigaps. This indicates that stacking domain walls potentially do not correspond to a topological domain wall in the order parameter.
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4
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Geisenhof FR, Winterer F, Seiler AM, Lenz J, Xu T, Zhang F, Weitz RT. Quantum anomalous Hall octet driven by orbital magnetism in bilayer graphene. Nature 2021; 598:53-58. [PMID: 34616059 DOI: 10.1038/s41586-021-03849-w] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2021] [Accepted: 07/22/2021] [Indexed: 11/09/2022]
Abstract
The quantum anomalous Hall (QAH) effect-a macroscopic manifestation of chiral band topology at zero magnetic field-has been experimentally realized only by the magnetic doping of topological insulators1-3 and the delicate design of moiré heterostructures4-8. However, the seemingly simple bilayer graphene without magnetic doping or moiré engineering has long been predicted to host competing ordered states with QAH effects9-11. Here we explore states in bilayer graphene with a conductance of 2 e2 h-1 (where e is the electronic charge and h is Planck's constant) that not only survive down to anomalously small magnetic fields and up to temperatures of five kelvin but also exhibit magnetic hysteresis. Together, the experimental signatures provide compelling evidence for orbital-magnetism-driven QAH behaviour that is tunable via electric and magnetic fields as well as carrier sign. The observed octet of QAH phases is distinct from previous observations owing to its peculiar ferrimagnetic and ferrielectric order that is characterized by quantized anomalous charge, spin, valley and spin-valley Hall behaviour9.
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Affiliation(s)
- Fabian R Geisenhof
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Felix Winterer
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Anna M Seiler
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Jakob Lenz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Tianyi Xu
- Department of Physics, University of Texas at Dallas, Richardson, TX, USA
| | - Fan Zhang
- Department of Physics, University of Texas at Dallas, Richardson, TX, USA.
| | - R Thomas Weitz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany. .,Center for Nanoscience (CeNS), Munich, Germany. .,Munich Center for Quantum Science and Technology (MCQST), Munich, Germany. .,1st Physical Institute, Faculty of Physics, University of Göttingen, Göttingen, Germany.
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5
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Che S, Shi Y, Yang J, Tian H, Chen R, Taniguchi T, Watanabe K, Smirnov D, Lau CN, Shimshoni E, Murthy G, Fertig HA. Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene. PHYSICAL REVIEW LETTERS 2020; 125:036803. [PMID: 32745392 DOI: 10.1103/physrevlett.125.036803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2019] [Accepted: 06/15/2020] [Indexed: 06/11/2023]
Abstract
Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B_{⊥} and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insulating phase and two metallic phases, with 0, 1, and 2 helical edge states, respectively. These phases are accounted for by a theoretical model that relates their conductance to spin-polarization plateaus. Transitions between them arise from a competition among interlayer hopping, electrostatic and exchange interaction energies. Our work highlights the complex competing symmetries and the rich quantum phases in few-layer graphene.
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Affiliation(s)
- Shi Che
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Yanmeng Shi
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Jiawei Yang
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Haidong Tian
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Ruoyu Chen
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Efrat Shimshoni
- Department of Physics, Bar-Ilan University, Ramat Gan 52900, Israel
| | - Ganpathy Murthy
- Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, USA
| | - Herbert A Fertig
- Department of Physics, Indiana University Bloomington, Bloomington, Indiana 47405, USA
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6
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Wang D, Che S, Cao G, Lyu R, Watanabe K, Taniguchi T, Lau CN, Bockrath M. Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe 2 Heterostructures. NANO LETTERS 2019; 19:7028-7034. [PMID: 31525877 DOI: 10.1021/acs.nanolett.9b02445] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultraclean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A distinct Landau level crossing pattern emerges when tuning the charge density and displacement field independently with dual gates, originating from a layer-selective SOC proximity effect. Analyzing the Landau level crossings and measured inter-Landau level energy gaps yields the proximity-induced SOC energy scale. The Ising SOC is ∼2.2 meV, 100 times higher than the intrinsic SOC in graphene, whereas its sign is consistent with theories predicting a dependence of SOC on interlayer twist angle. The Rashba SOC is ∼15 meV. Finally, we infer the magnetic field dependence of the inter-Landau level Coulomb interactions. These ultraclean bilayer graphene/WSe2 heterostructures provide a high mobility system with the potential to realize novel topological electronic states and manipulate spins in nanostructures.
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Affiliation(s)
- Dongying Wang
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Shi Che
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Guixin Cao
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Rui Lyu
- Department of Physics and Astronomy , University of California , Riverside , California 92521 , United States
| | - Kenji Watanabe
- National Institute for Materials Science , Namiki Tsukuba Ibaraki 305-0044 Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , Namiki Tsukuba Ibaraki 305-0044 Japan
| | - Chun Ning Lau
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Marc Bockrath
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
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7
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Shi Y, Che S, Zhou K, Ge S, Pi Z, Espiritu T, Taniguchi T, Watanabe K, Barlas Y, Lake R, Lau CN. Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene. PHYSICAL REVIEW LETTERS 2018; 120:096802. [PMID: 29547315 DOI: 10.1103/physrevlett.120.096802] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2017] [Indexed: 06/08/2023]
Abstract
As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring the Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as a nonmonotonic dependence of conductivity on the charge density n and out-of-plane electric field D, anomalous quantum Hall sequences and Landau level crossings that evolve with n, D, and B.
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Affiliation(s)
- Yanmeng Shi
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Shi Che
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Kuan Zhou
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Supeng Ge
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Ziqi Pi
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Timothy Espiritu
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Takashi Taniguchi
- National Institute for Material Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Material Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Yafis Barlas
- Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, California 92521, USA
| | - Roger Lake
- Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, California 92521, USA
| | - Chun Ning Lau
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
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8
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Li J, Tupikov Y, Watanabe K, Taniguchi T, Zhu J. Effective Landau Level Diagram of Bilayer Graphene. PHYSICAL REVIEW LETTERS 2018; 120:047701. [PMID: 29437431 DOI: 10.1103/physrevlett.120.047701] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2017] [Revised: 11/18/2017] [Indexed: 06/08/2023]
Abstract
The E=0 octet of bilayer graphene in the filling factor range of -4<ν<4 is a fertile playground for many-body phenomena, yet a Landau level diagram is missing due to strong interactions and competing quantum degrees of freedom. We combine measurements and modeling to construct an empirical and quantitative spectrum. The single-particlelike diagram incorporates interaction effects effectively and provides a unified framework to understand the occupation sequence, gap energies, and phase transitions observed in the octet. It serves as a new starting point for more sophisticated calculations and experiments.
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Affiliation(s)
- Jing Li
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Yevhen Tupikov
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Kenji Watanabe
- National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jun Zhu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
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9
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Yang J, Tran S, Wu J, Che S, Stepanov P, Taniguchi T, Watanabe K, Baek H, Smirnov D, Chen R, Lau CN. Integer and Fractional Quantum Hall effect in Ultrahigh Quality Few-layer Black Phosphorus Transistors. NANO LETTERS 2018; 18:229-234. [PMID: 29257890 DOI: 10.1021/acs.nanolett.7b03954] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding questions such as the functional dependence of Landau level (LL) gaps on magnetic field B, and possible anisotropic fractional QH states. Using encapsulated few-layer BP transistors with mobility up to 55 000 cm2/(V s), we extracted LL gaps over an exceptionally wide range of B for QH states at filling factors -1 to -4, which are determined to be linear in B, thus resolving a controversy raised by its anisotropy. Furthermore, a fractional QH state at ν ≈ -4/3 and an additional feature at -0.56 ± 0.1 are observed, underscoring BP as a tunable 2D platform for exploring electron interactions.
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Affiliation(s)
- Jiawei Yang
- Department of Physics, Ohio State University , Columbus, Ohio 43220, United States
| | - Son Tran
- Department of Physics, Ohio State University , Columbus, Ohio 43220, United States
| | - Jason Wu
- Department of Physics and Astronomy, University of California , Riverside, California 92521, United States
| | - Shi Che
- Department of Physics, Ohio State University , Columbus, Ohio 43220, United States
| | - Petr Stepanov
- Department of Physics, Ohio State University , Columbus, Ohio 43220, United States
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Hongwoo Baek
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
| | - Ruoyu Chen
- Department of Physics, Ohio State University , Columbus, Ohio 43220, United States
| | - Chun Ning Lau
- Department of Physics, Ohio State University , Columbus, Ohio 43220, United States
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10
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Hunt BM, Li JIA, Zibrov AA, Wang L, Taniguchi T, Watanabe K, Hone J, Dean CR, Zaletel M, Ashoori RC, Young AF. Direct measurement of discrete valley and orbital quantum numbers in bilayer graphene. Nat Commun 2017; 8:948. [PMID: 29038518 PMCID: PMC5715057 DOI: 10.1038/s41467-017-00824-w] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2017] [Accepted: 07/28/2017] [Indexed: 11/16/2022] Open
Abstract
The high magnetic field electronic structure of bilayer graphene is enhanced by the spin, valley isospin, and an accidental orbital degeneracy, leading to a complex phase diagram of broken symmetry states. Here, we present a technique for measuring the layer-resolved charge density, from which we directly determine the valley and orbital polarization within the zero energy Landau level. Layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital order, including previously unobserved orbitally polarized states stabilized by skew interlayer hopping. We fit our data to a model that captures both single-particle and interaction-induced anisotropies, providing a complete picture of this correlated electron system. The resulting roadmap to symmetry breaking paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two-dimensional materials where layer polarization maps to the valley or spin quantum numbers. The phase diagram of bilayer graphene at high magnetic fields has been an outstanding question, with orders possibly between multiple internal quantum degrees of freedom. Here, Hunt et al. report the measurement of the valley and orbital order, allowing them to directly reconstruct the phase diagram.
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Affiliation(s)
- B M Hunt
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.,Department of Physics, Columbia University, New York, NY, 10027, USA.,Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - J I A Li
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - A A Zibrov
- Department of Physics, University of California, Santa Barbara, CA, 93106, USA
| | - L Wang
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - T Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - K Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - J Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - C R Dean
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - M Zaletel
- Station Q, Microsoft Research, Santa Barbara, CA, 93106-6105, USA
| | - R C Ashoori
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - A F Young
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. .,Department of Physics, University of California, Santa Barbara, CA, 93106, USA.
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11
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Stepanov P, Barlas Y, Espiritu T, Che S, Watanabe K, Taniguchi T, Smirnov D, Lau CN. Tunable Symmetries of Integer and Fractional Quantum Hall Phases in Heterostructures with Multiple Dirac Bands. PHYSICAL REVIEW LETTERS 2016; 117:076807. [PMID: 27563989 DOI: 10.1103/physrevlett.117.076807] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2016] [Indexed: 06/06/2023]
Abstract
The copresence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN-encapsulated ABA-stacked trilayer graphene as a function charge density n, magnetic field B, and interlayer displacement field D, and observe transitions among states with different spin, valley, orbital, and parity polarizations. Such a rich pattern arises from crossings between Landau levels from different subbands, which reflect the evolving symmetries that are tunable in situ. At D=0, we observe fractional quantum Hall (FQH) states at filling factors 2/3 and -11/3. Unlike those in bilayer graphene, these FQH states are destabilized by a small interlayer potential that hybridizes the different Dirac bands.
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Affiliation(s)
- Petr Stepanov
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Yafis Barlas
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Tim Espiritu
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Shi Che
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
| | - Chun Ning Lau
- Department of Physics and Astronomy, University of California, Riverside, Riverside, California 92521, USA
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