Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

Exploring the resonance absorption of subwavelength-patterned epitaxial-grown group-IV semiconductor composite structures

We experimentally and theoretically demonstrate a mid-infrared perfect absorber with all group-IV epitaxial layered composite structures. The multispectral narrowband strong absorption (>98%) is attributed to the combined effects of the asymmetric Fabry-Perot (FP) interference and the plasmonic resonance in the subwavelength-patterned metal-dielectric-metal (MDM) stack. The spectral position and intensity of the absorption resonance were analyzed by reflection and transmission. While a localized plasmon resonance in the dual-metal region was found to be modulated by both the horizontal (ribbon width) and vertical (spacer layer thickness) profile, the asymmetric FP modes were modulated merely by the vertical geometric parameters. Semi-empirical calculations show strong coupling between modes with a large Rabi-splitting energy reaching 46% of the mean energy of the plasmonic mode under proper horizontal profile. A wavelength-adjustable all-group-IV-semiconductor plasmonic perfect absorber has potential for photonic-electronic integration.

Sub-three-cycle pulses at 2 µm from a degenerate optical parametric amplifier

In this work we present a compact two-stage optical parametric amplifier (OPA) pumped at degeneracy by the fundamental of a Yb:KGW laser system. The output pulses span from 1.7 to 2.5 µm (120-176 THz) and are compressed to a sub-20 fs duration. This parametric amplifier exploits the broad phase-matching bandwidth at the degeneracy point in bismuth triborate (BiBO) and periodically poled lithium tantalate (PPLT). The result drastically expands the availability of ultrashort pulses with few-microjoule energy from near-infrared (NIR) to even longer wavelengths in the mid-infrared (MIR) spectral region.

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the on-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.

High sensitivity Ge-on-Si single-photon avalanche diode detectors

The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7×10^-17WHz^-12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134±10ps are demonstrated.

CMOS-Compatible Antimony-Doped Germanium Epilayers for Mid-Infrared Low-Loss High-Plasma-Frequency Plasmonics

Antimony (Sb) heavily-doped germanium (Ge)-on-silicon (Si) epitaxial films are investigated as mid-infrared (MIR) plasmonic materials. Structural, electrical, and optical properties have been improved by proper choice of dopant species (i.e., Sb) and optimization of the growth parameters (i.e., Sb flux and substrate temperature). The increased electron conductivity can be attributed to the elevated carrier concentration (1.5 × 10²⁰ cm^-3) and carrier mobility (224 cm² V^-1 s^-1) in the Sb-doped Ge epilayers. The measured MIR reflectivities of the Sb-doped Ge films show free-carrier-dependent properties, which leads to tunable real and imaginary parts of permittivities. Localized surface plasmon polaritons of the bowtie antennas fabricated from the Sb-doped Ge films are demonstrated. The fabricated antennas can provide signal enhancement for the molecular vibrational spectroscopy when these vibrational lines are spectrally in proximity to the localized plasmon resonance. These CMOS-compatible Sb-doped Ge epilayers offer a platform to study the interaction of MIR plasmon with nanostructures on chips.

Plasmonic mid-infrared third harmonic generation in germanium nanoantennas

We demonstrate third harmonic generation in plasmonic antennas consisting of highly doped germanium grown on silicon substrates and designed to be resonant in the mid-infrared frequency range that is inaccessible with conventional nonlinear plasmonic materials. Owing to the near-field enhancement, the result is an ultrafast, subdiffraction, coherent light source with a wavelength tunable between 3 and 5 µm, and ideally overlapping with the fingerprint region of molecular vibrations. To observe the nonlinearity in this challenging spectral window, a high-power femtosecond laser system equipped with parametric frequency conversion in combination with an all-reflective confocal microscope setup is employed. We demonstrate spatially resolved maps of the linear scattering cross section and the nonlinear emission of single isolated antenna structures. A clear third-order power dependence as well as mid-infrared emission spectra prove the nonlinear nature of the light emission. Simulations support the observed resonance length of the double-rod antenna and demonstrate that the field enhancement inside the antenna material is responsible for the nonlinear frequency mixing.

Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing

The development of Ge and SiGe chemical vapor deposition techniques on silicon wafers has enabled the integration of multi-quantum well structures in silicon photonics chips for nonlinear optics with potential applications to integrated nonlinear optics, however research has focused up to now on undoped quantum wells and interband optical excitations. In this work, we present model calculations for the giant nonlinear coefficients provided by intersubband transitions in hole-doped Ge/SiGe and Si/SiGe multi-quantum wells. We employ a valence band-structure model for Si_1-xGe_x to calculate the confined hole states of asymmetric-coupled quantum wells for second-harmonic generation in the mid-infrared. We calculate the nonlinear emission spectra from the second-order susceptibility tensor, including the particular vertical emission spectra of valence-band quantum wells. Two possible nonlinear mid-infrared sensor architectures, one based on waveguides and another based on metasurfaces, are described as perspective application.

Femtosecond laser damage of germanium from near- to mid-infrared wavelengths

Femtosecond laser-induced damage and ablation (fs-LIDA) is a rich field in extreme non-perturbative nonlinear optics with wide ranging applications, including laser micro- and nano-machining, waveguide writing, and eye surgery. Our understanding of fs-LIDA, however, is limited mostly to visible and near-infrared wavelengths. In this work, we systematically study single-shot, fs-laser ablation (fs-LIA) of single-crystal germanium from near- to mid-infrared wavelengths, and compare the fs-LIA wavelength scaling with two widely used models. We show that these models are inadequate, particularly at mid-infrared wavelengths. Instead, a hybrid model is proposed involving Keldysh ionization rates, a constant free-carrier density threshold, and multi-band effects, which yields good agreement with experimental observations. Aspects of this model may be applied to understanding other strong-field non-perturbative phenomena in solids.

Nanomaterial-Based Plasmon-Enhanced Infrared Spectroscopy

Surface-enhanced infrared absorption (SEIRA) has attracted increasing attention due to the potential of infrared spectroscopy in applications such as molecular trace sensing of solids, polymers, and proteins, specifically fueled by recent substantial developments in infrared plasmonic materials and engineered nanostructures. Here, the significant progress achieved in the past decades is reviewed, along with the current state of the art of SEIRA. In particular, the plasmonic properties of a variety of nanomaterials are discussed (e.g., metals, semiconductors, and graphene) along with their use in the design of efficient SEIRA configurations. To conclude, perspectives on potential applications, including single-molecule detection and in vivo bioassays, are presented.

Ultrawide Thermo-optic Tuning of PbTe Meta-Atoms

Subwavelength Mie resonators have enabled new classes of optical antenna and nanophotonic devices and can act as the basic meta-atom constituents of low-loss dielectric metasurfaces. In any application, tunable Mie resonances are key to achieving a dynamic and reconfigurable operation. However, the active tuning of these nanoantennas is still limited and usually results in sub-linewidth resonance tuning. Here, we demonstrate the ultrawide dynamic tuning of PbTe Mie resonators fabricated via both laser ablation and a novel solution-processing approach. Taking advantage of the extremely large thermo-optic (TO) coefficient and a high refractive index of PbTe, we demonstrate high-quality factor Mie resonances that are tuned by several linewidths with temperature modulations as small as ΔT ∼ 10 K. We reveal that the origin for this exceptional tunability is due to an increased TO coefficient of PbTe at low temperatures. When combined into metasurface arrays, these effects can be exploited in ultranarrow active notch filers and metasurface phase shifters that require only a few kelvin modulation. These findings demonstrate the enabling potential of PbTe as a versatile, solution-processable, and highly tunable nanophotonic material that suggests new possibilities for meta-atom paints, coatings, and 3D metamaterials fabrication.