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Wan B, Yuan Y, Zheng L, Xu Y, Zhao S, Liu K, Huang D, Wu L, Zhang Z, Wang G, Li J, Zhang S, Gou H. BaCu, a Two-Dimensional Electride with Cu Anions. J Am Chem Soc 2024; 146:17508-17516. [PMID: 38861394 DOI: 10.1021/jacs.4c05723] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2024]
Abstract
The electron-rich characteristic and low work function endow electrides with excellent performance in (opto)electronics and catalytic applications; these two features are closely related to the structural topology, constituents, and valence electron concentration of electrides. However, the synthesized electrides, especially two-dimensional (2D) electrides, are limited to specific structural prototypes and anionic p-block elements. Here we synthesize and identify a distinct 2D electride of BaCu with delocalized anionic electrons confined to the interlayer spaces of the BaCu framework. The bonding between Cu and Ba atoms exhibits ionic characteristics, and the adjacent Cu anions form a planar honeycomb structure with metallic Cu-Cu bonding. The negatively charged Cu ions are revealed by the theoretical calculations and experimental X-ray absorption near-edge structure. Physical property measurements reveal that BaCu electride has a high electronic conductivity (ρ = 3.20 μΩ cm) and a low work function (2.5 eV), attributed to the metallic Cu-Cu bonding and delocalized anionic electrons. In contrast to typical ionic 2D electrides with p-block anions, density functional theory calculations find that the orbital hybridization between the delocalized anionic electrons and BaCu framework leads to unique isotropic physical properties, such as mechanical properties, and work function. The freestanding BaCu monolayer with half-metal conductivity exhibits low exfoliation energy (0.84 J/m2) and high mechanical/thermal stability, suggesting the potential to achieve low-dimensional BaCu from the bulk. Our results expand the space for the structure and attributes of 2D electrides, facilitating the discovery and potential application of novel 2D electrides with transition metal anions.
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Affiliation(s)
- Biao Wan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
| | - Yifang Yuan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
| | - Lu Zheng
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
| | - Ya Xu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
| | - Shijing Zhao
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Kefeng Liu
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Dajian Huang
- Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621907, China
| | - Lailei Wu
- College of Material Science and Engineering, Liaoning Technical University, Fuxin 123000, China
| | - Zhuangfei Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
| | - Gongkai Wang
- Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Jiong Li
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
| | - Shuo Zhang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
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Deswal P, Samanta K, Ghosh D. The impact of spatially heterogeneous chemical doping on the electronic properties of CdSe quantum dots: insights from ab initio computation. NANOSCALE 2023; 15:17055-17067. [PMID: 37846794 DOI: 10.1039/d3nr04342h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2023]
Abstract
The introduction of copper (Cu) impurity in semiconductor CdSe quantum dots (QDs) gives rise to unique photoluminescence (PL) bands exhibiting distinctive characteristics, like broad line width, significant Stokes shift, and complex temporal decay. The atomistic origins of these spectral features are yet to be understood comprehensively. We employed multiple computational techniques to systematically study the impact of the spatial heterogeneity of Cu atoms on the stability and photophysical properties, including the emission linewidth of doped QDs under ambient conditions. The Cu substitution introduces a spin-polarized intragap state, the energetic position of which is strongly dependent on the dopant location and causes spectral broadening in QD ensembles. Furthermore, the dopant dynamics under ambient conditions are significantly influenced by the specific arrangement of Cu within the QDs. The dynamic electronic structures of surface-doped CdSe illustrate more pronounced perturbations and vary the mid-gap state position more drastically than those of the core-doped QDs. Vibronic coupling broadens the photoluminescence peaks associated with the conduction band-to-defect level transition for individual QDs. These insights into the dynamic structure-photophysical property relationship suggest viable approaches, such as tuning the operational temperature and selective co-doping, to enhance the functional performances of doped CdSe QDs strategically.
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Affiliation(s)
- Priyanka Deswal
- Department of Physics, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
| | - Kushal Samanta
- Department of Materials Science and Engineering, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India.
| | - Dibyajyoti Ghosh
- Department of Materials Science and Engineering, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India.
- Department of Chemistry, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
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3
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Zhou R, Liang H, Duan Y, Wei SH. Enhanced Anharmonicity by Forming Low-Symmetry Off-Center Phase: The Case of Two-Dimensional Group-IB Chalcogenides. J Phys Chem Lett 2023; 14:737-742. [PMID: 36649585 DOI: 10.1021/acs.jpclett.2c03342] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Enhanced anharmonicity is required to achieve many interesting phenomena in thermoelectricity, superconductivity, ferroelectricity, etc. Here, we propose a novel mechanism for enhancing anharmonicity by forming the low-symmetry off-center ground state, such as the s(II) phase, in two-dimensional AIB2X chalcogenides (AIB = Cu, Ag and Au; X = S, Se, and Te). In this system, the in-plane rotational phonon mode introduces a much stronger anharmonicity in the distorted s(II) phase than in the nondistorted s(I) phase. We show that the stabilities of the s(I) and s(II) phases arise from the ionicity and the ionic size; for example, the low ionicity and the small ionic size favor the s(II) phase. We further demonstrate that the anharmonicity can be tuned by controlling the strain-induced s(II)-to-s(I) phase transition, which explains the anomalous lattice thermal conductivity. Our work relates anharmonicity to symmetry-breaking structural distortion and widens the ways to design excellent thermoelectric materials.
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Affiliation(s)
- Ran Zhou
- School of Materials and Physics, China University of Mining and Technology, Xuzhou, Jiangsu 221116, China
| | - Hanpu Liang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Yifeng Duan
- School of Materials and Physics, China University of Mining and Technology, Xuzhou, Jiangsu 221116, China
| | - Su-Huai Wei
- Beijing Computational Science Research Center, Beijing 100193, China
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Fang W, Chen Y, Kuang K, Li M. Excellent Thermoelectric Performance of 2D CuMN 2 (M = Sb, Bi; N = S, Se) at Room Temperature. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6700. [PMID: 36234041 PMCID: PMC9572028 DOI: 10.3390/ma15196700] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2022] [Revised: 09/18/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
2D copper-based semiconductors generally possess low lattice thermal conductivity due to their strong anharmonic scattering and quantum confinement effect, making them promising candidate materials in the field of high-performance thermoelectric devices. In this work, we proposed four 2D copper-based materials, namely CuSbS2, CuSbSe2, CuBiS2, and CuBiSe2. Based on the framework of density functional theory and Boltzmann transport equation, we revealed that the monolayers possess high stability and narrow band gaps of 0.57~1.10 eV. Moreover, the high carrier mobilities (102~103 cm2·V-1·s-1) of these monolayers lead to high conductivities (106~107 Ω-1·m-1) and high-power factors (18.04~47.34 mW/mK2). Besides, as the strong phonon-phonon anharmonic scattering, the monolayers also show ultra-low lattice thermal conductivities of 0.23~3.30 W/mK at 300 K. As results show, all the monolayers for both p-type and n-type simultaneously show high thermoelectric figure of merit (ZT) of about 0.91~1.53 at room temperature.
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Affiliation(s)
- Wenyu Fang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
- Public Health and Management School, Hubei University of Medicine, Shiyan 442000, China
| | - Yue Chen
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Kuan Kuang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Mingkai Li
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Lab of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
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Liu W, Wang Z, Chen Z, Luo J, Li S, Wang L. Algorithm advances and applications of time‐dependent first‐principles simulations for ultrafast dynamics. WIRES COMPUTATIONAL MOLECULAR SCIENCE 2022. [DOI: 10.1002/wcms.1577] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Wen‐Hao Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences Beijing China
- Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China
| | - Zhi Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences Beijing China
| | - Zhang‐Hui Chen
- Materials Science Division Lawrence Berkeley National Laboratory Berkeley California USA
| | - Jun‐Wei Luo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences Beijing China
- Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China
- Beijing Academy of Quantum Information Sciences Beijing China
| | - Shu‐Shen Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences Beijing China
- Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China
- Beijing Academy of Quantum Information Sciences Beijing China
| | - Lin‐Wang Wang
- Materials Science Division Lawrence Berkeley National Laboratory Berkeley California USA
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Sun Y, Qiu P, Yu W, Li J, Guo H, Wu L, Luo H, Meng R, Zhang Y, Liu SF. N-Type Surface Design for p-Type CZTSSe Thin Film to Attain High Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104330. [PMID: 34623707 DOI: 10.1002/adma.202104330] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2021] [Revised: 08/25/2021] [Indexed: 06/13/2023]
Abstract
As a low-cost substitute that uses no expensive rare-earth elements for the high-efficiency Cu(In,Ga)(S,Se)2 solar cell, the Cu2 ZnSn(S,Se)4 (CZTSSe) solar cell has borrowed optimization strategies used for its predecessor to improve its device performance, including a profiled band gap and surface inversion. Indeed, there have been few reports of constructing CZTSSe absorber layers with surface inversion to improve efficiency. Here, a strategy that designs the CZTSSe absorber to attain surface modification by using n-type Ag2 ZnSnS4 is demonstrated. It has been discovered that Ag plays two major roles in the kesterite thin film devices: surface inversion and front gradient distribution. It has not only an excellent carrier transport effect and reduced probability of electron-hole recombination but also results in increased carrier separation by increasing the width of the depletion region, leading to much improved VOC and JSC . Finally, a champion CZTSSe solar cell renders efficiency as high as 12.55%, one of the highest for its type, with the open-circuit voltage deficit reduced to as low as 0.306 V (63.2% Shockley-Queisser limit). The band engineering for surface modification of the absorber and high efficiency achieved here shine a new light on the future of the CZTSSe solar cell.
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Affiliation(s)
- Yali Sun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film Photoelectronic Technology, Tianjin, 300350, China
| | - Pengfei Qiu
- College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Wei Yu
- College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Jianjun Li
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Hongling Guo
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film Photoelectronic Technology, Tianjin, 300350, China
| | - Li Wu
- Key Laboratory of Weak-Light Nonlinear Photonics Ministry of Education, School of Physics, Nankai University, Tianjin, 300071, China
| | - Hao Luo
- College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Rutao Meng
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film Photoelectronic Technology, Tianjin, 300350, China
| | - Yi Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film Photoelectronic Technology, Tianjin, 300350, China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
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Yang K, Xiao J, Ren Z, Wei Z, Luo JW, Wei SH, Deng HX. Decoupling of the Electrical and Thermal Transports in Strongly Coupled Interlayer Materials. J Phys Chem Lett 2021; 12:7832-7839. [PMID: 34379422 DOI: 10.1021/acs.jpclett.1c01783] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Thermoelectric materials which enable heat-to-electricity conversion are fundamentally important for heat management in semiconductor devices. Achieving high thermoelectric performance requires blocking the thermal transport and maintaining the high electronic transport, but it is a challenge to satisfy both criteria simultaneously. We propose that tuning the interlayer distance can effectively modulate the electrical and thermal conductivities. We find group IV-VI and V semiconductors with a moderate interlayer distance can exhibit high thermoelectric performance. Taking SnSe as an example, we reveal that in the out-of-plane direction the delocalized pz orbitals combined with the relatively small interlayer distance lead to overlapping of the antibonding state wave functions, which is beneficial for high electronic transport. However, because of the breakdown of the chemical bond, the out-of-plane thermal conductivity is small. This study provides a strategy to enhance electrical conductivity without increasing thermal conductivity and thus sheds light on the design of thermoelectric devices.
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Affiliation(s)
- Kaike Yang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications, Department of Physics, Hunan Normal University, Changsha 410081, China
| | - Jin Xiao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- School of Science, Hunan University of Technology, Zhuzhou 412007, China
| | - Zhihui Ren
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun-Wei Luo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Su-Huai Wei
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Chu J, Huang J, Liu R, Liao J, Xia X, Zhang Q, Wang C, Gu M, Bai S, Shi X, Chen L. Electrode interface optimization advances conversion efficiency and stability of thermoelectric devices. Nat Commun 2020; 11:2723. [PMID: 32483181 PMCID: PMC7264234 DOI: 10.1038/s41467-020-16508-x] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 04/29/2020] [Indexed: 11/25/2022] Open
Abstract
Although the CoSb3-based skutterudite thermoelectric devices have been highly expected for wide uses such as waste heat recovery and space power supply, the limited long-term service stability majorly determined by the degradation of electrode interface obstructs its applications. Here, we built up an effective criterion for screening barrier layer based on the combination of negative interfacial reaction energy and high activation energy barrier of Sb migration through the formed interfacial reaction layer. Accordingly, we predicted niobium as a promising barrier layer. The experimental results show the skutterudite/Nb joint has the slowest interfacial reaction layer growth rate and smallest interfacial electrical resistivity. The fabricated 8-pair skutterudite module using Nb as barrier layer achieves a recorded conversion efficiency of 10.2% at hot-side temperature of 872 K and shows excellent stability during long-time aging. This simple criterion provides an effective guidance on screening barrier layer with bonding-blocking-conducting synergetic functions for thermoelectric device integration. Long-term service stability of thermoelectric devices is one of the major obstacles for their application. Here, the authors combine interfacial reaction energy and Sb migration activation energy barrier as a criterion to determine the interfacial reliability for skutterudite thermoelectric devices.
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Affiliation(s)
- Jing Chu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jian Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Ruiheng Liu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China. .,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Jincheng Liao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Xugui Xia
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Qihao Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Chao Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Ming Gu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shengqiang Bai
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China. .,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Yu ZL, Zhao YQ, He PB, Liu B, Yang JL, Cai MQ. The influence of electrode for electroluminescence devices based on all-inorganic halide perovskite CsPbBr 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:065002. [PMID: 31648212 DOI: 10.1088/1361-648x/ab50cf] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Electroluminescence devices based on all-inorganic halide perovskite material with excellent luminescence performance have been studied extensively in recent years. However, the important role for the electrodes of electroluminescence devices is payed few attention by theoretical and experimental studies. Appropriate electrodes can reduce the Schottky barrier height to decrease the energy loss, and prevent the metal impurities from diffusing into the perovskite material to generate deep traps levels, which improves the luminous efficiency and lifetime of devices. In this paper, not only the interface effects between CsPbBr3 and common metal electrode (Ag, Au, Ni, Cu and Pt) are studied by first-principle calculations, but also the diffusion effects of metal electrode atom into the CsPbBr3 layer are also explored by nudged elastic band calculations. The calculated results show the metal Ag is more suitable for the cathode for CsPbBr3 electroluminescence devices, while the metal Pt is more applicable for the anode. Based on the overall consideration about the interface effects and diffusion effects of the CsPbBr3-metal electrode junctions, the essential principle is analyzed. The work provides theoretical guidance for how to select the right electrode for the electroluminescence performance of all-inorganic halide perovskite. The critical factor of Schottky barrier height between the electrode and the light-emitting semiconductor, and transition level generated by metal impurities also provide a valuable reference how to select the suitable electrodes for other electroluminescence devices.
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Affiliation(s)
- Zhuo-Liang Yu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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Li J, Wang D, Li X, Zeng Y, Zhang Y. Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700744. [PMID: 29721421 PMCID: PMC5908347 DOI: 10.1002/advs.201700744] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2017] [Revised: 11/29/2017] [Indexed: 05/11/2023]
Abstract
As a promising candidate for low-cost and environmentally friendly thin-film photovoltaics, the emerging kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have experienced rapid advances over the past decade. However, the record efficiency of CZTSSe solar cells (12.6%) is still significantly lower than those of its predecessors Cu(In,Ga)Se2 (CIGS) and CdTe thin-film solar cells. This record has remained for several years. The main obstacle for this stagnation is unanimously attributed to the large open-circuit voltage (VOC) deficit. In addition to cation disordering and the associated band tailing, unpassivated interface defects and undesirable energy band alignment are two other culprits that account for the large VOC deficit in kesterite solar cells. To capture the great potential of kesterite solar cells as prospective earth-abundant photovoltaic technology, current research focuses on cation substitution for CZTSSe-based materials. The aim here is to examine recent efforts to overcome the VOC limit of kesterite solar cells by cation substitution and to further illuminate several emerging prospective strategies, including: i) suppressing the cation disordering by distant isoelectronic cation substitution, ii) optimizing the junction band alignment and constructing a graded bandgap in absorber, and iii) engineering the interface defects and enhancing the junction band bending.
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Affiliation(s)
- Jianjun Li
- Institute of Photoelectronic Thin Film Devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and Technology TianjinNankai UniversityTianjin300071China
- Institute of New Energy TechnologyJinan UniversityGuangzhou510632China
| | - Dongxiao Wang
- Institute of Photoelectronic Thin Film Devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and Technology TianjinNankai UniversityTianjin300071China
| | - Xiuling Li
- Institute of Photoelectronic Thin Film Devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and Technology TianjinNankai UniversityTianjin300071China
| | - Yu Zeng
- Institute of Photoelectronic Thin Film Devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and Technology TianjinNankai UniversityTianjin300071China
| | - Yi Zhang
- Institute of Photoelectronic Thin Film Devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and Technology TianjinNankai UniversityTianjin300071China
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