Voltage Control of Rare-Earth Magnetic Moments at the Magnetic-Insulator-Metal Interface

Phase-shift control of the exchange coupling between magnetic impurities

The control of magnetic interactions is one of the most relevant topics in spintronics. In this work, we propose to use electric potential barriers for tuning or even suppressing the RKKY exchange coupling between magnetic impurities in a two-dimensional electron gas. Our results show that it is possible to manipulate both the magnitude and sign of the RKKY coupling. Systems with two and three impurities are studied. In the last case, the use of two potential barriers can be employed to decouple one of the impurities to the rest. The possibility to control the interactions between magnetic atoms individually may have applications in neuromorphic and quantum computing.

Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy

The control of magnetic materials and devices by voltages without electric currents holds the promise of power-saving nano-scale devices. Here we study the temperature-dependent voltage control of the magnetic anisotropy caused by rare-earth (RE) local moments at an interface between a magnetic metal and a non-magnetic insulator, such as Co|(RE)|MgO. Based on a Stevens operator representation of crystal and applied field effects, we find large dominantly quadrupolar intrinsic and field-induced interface anisotropies at room temperature. We suggest improved functionalities of transition metal tunnel junctions by dusting their interfaces with rare earths.