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Klanurak I, Watanabe K, Taniguchi T, Chatraphorn S, Taychatanapat T. Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing. NANO LETTERS 2024; 24:6330-6336. [PMID: 38723237 PMCID: PMC11140744 DOI: 10.1021/acs.nanolett.4c01133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 05/04/2024] [Accepted: 05/08/2024] [Indexed: 05/15/2024]
Abstract
Bernal-stacked tetralayer graphene (4LG) exhibits intriguing low-energy properties, featuring two massive sub-bands and showcasing diverse features of topologically distinct, anisotropic Fermi surfaces, including Lifshitz transitions and trigonal warping. Here, we study the influence of the band structure on electron dynamics within 4LG using transverse magnetic focusing. Our analysis reveals two distinct focusing peaks corresponding to the two sub-bands. Furthermore, we uncover a pronounced dependence of the focusing spectra on crystal orientations, indicative of an anisotropic Fermi surface. Utilizing the semiclassical model, we attribute this orientation-dependent behavior to the trigonal warping of the band structure. This phenomenon leads to variations in electron trajectories based on crystal orientation. Our findings not only enhance our understanding of the dynamics of electrons in 4LG but also offer a promising method for probing anisotropic Fermi surfaces in other materials.
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Affiliation(s)
- Illias Klanurak
- Department
of Physics, Faculty of Science, Chulalongkorn
University, Patumwan, Bangkok 10330, Thailand
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Sojiphong Chatraphorn
- Department
of Physics, Faculty of Science, Chulalongkorn
University, Patumwan, Bangkok 10330, Thailand
| | - Thiti Taychatanapat
- Department
of Physics, Faculty of Science, Chulalongkorn
University, Patumwan, Bangkok 10330, Thailand
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2
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Srivastav SK, Udupa A, Watanabe K, Taniguchi T, Sen D, Das A. Electric-Field-Tunable Edge Transport in Bernal-Stacked Trilayer Graphene. PHYSICAL REVIEW LETTERS 2024; 132:096301. [PMID: 38489611 DOI: 10.1103/physrevlett.132.096301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/29/2023] [Accepted: 01/29/2024] [Indexed: 03/17/2024]
Abstract
This Letter presents a nonlocal study on the electric-field-tunable edge transport in h-BN-encapsulated dual-gated Bernal-stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the nonlocal resistance (R_{NL}) surpassed the expected classical Ohmic contribution by a factor of at least 2 orders of magnitude. Through scaling analysis, we found that the nonlocal resistance scales linearly with the local resistance (R_{L}) only when the D exceeds a critical value of ∼0.2 V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold (T<25 K). Further, the value of R_{NL} decreases in a linear fashion as the channel length (L) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied.
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Affiliation(s)
| | - Adithi Udupa
- Centre for High Energy Physics, Indian Institute of Science, Bangalore 560012, India
| | - K Watanabe
- National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Diptiman Sen
- Centre for High Energy Physics, Indian Institute of Science, Bangalore 560012, India
| | - Anindya Das
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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3
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Zhou H, Auerbach N, Uzan M, Zhou Y, Banu N, Zhi W, Huber ME, Watanabe K, Taniguchi T, Myasoedov Y, Yan B, Zeldov E. Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene. Nature 2023; 624:275-281. [PMID: 37993718 PMCID: PMC10719110 DOI: 10.1038/s41586-023-06763-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Accepted: 10/19/2023] [Indexed: 11/24/2023]
Abstract
The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2-4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5-7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8-11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.
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Affiliation(s)
- Haibiao Zhou
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Nadav Auerbach
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Matan Uzan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Yaozhang Zhou
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Nasrin Banu
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Weifeng Zhi
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Martin E Huber
- Departments of Physics and Electrical Engineering, University of Colorado Denver, Denver, CO, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Yuri Myasoedov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Eli Zeldov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
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4
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Liu M, Wang L, Yu G. Developing Graphene-Based Moiré Heterostructures for Twistronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103170. [PMID: 34723434 PMCID: PMC8728823 DOI: 10.1002/advs.202103170] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.
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Affiliation(s)
- Mengya Liu
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Liping Wang
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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5
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Sun H, Qi Z, Kim Y, Luo M, Yang B, Nam D. Frequency-tunable terahertz graphene laser enabled by pseudomagnetic fields in strain-engineered graphene. OPTICS EXPRESS 2021; 29:1892-1902. [PMID: 33726394 DOI: 10.1364/oe.405922] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2020] [Accepted: 10/28/2020] [Indexed: 05/22/2023]
Abstract
Graphene-based optoelectronic devices have recently attracted much attention for the next-generation electronic-photonic integrated circuits. However, it remains elusive whether it is feasible to create graphene-based lasers at the chip scale, hindering the realization of such a disruptive technology. In this work, we theoretically propose that Landau-quantized graphene enabled by strain-induced pseudomagnetic field can become an excellent gain medium that supports lasing action without requiring an external magnetic field. Tight-binding theory is employed for calculating electronic states in highly strained graphene while analytical and numerical analyses based on many-particle Hamiltonian allow studying detailed microscopic mechanisms of zero-field graphene Landau level laser dynamics. Our proposed laser presents unique features including a convenient, wide-range tuning of output laser frequency enabled by changing the level of strain in graphene gain media. The chip-scale graphene laser may open new possibilities for graphene-based electronic-photonic integrated circuits.
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Onodera M, Arai M, Masubuchi S, Kinoshita K, Moriya R, Watanabe K, Taniguchi T, Machida T. Electrical Control of Cyclotron Resonance in Dual-Gated Trilayer Graphene. NANO LETTERS 2019; 19:8097-8102. [PMID: 31658419 DOI: 10.1021/acs.nanolett.9b03280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Landau levels (LLs) of ABA-stacked trilayer graphene (TLG) are described as the combination of monolayer graphene-like LLs and bilayer graphene-like LLs. They are extremely sensitive to the applied perpendicular electric displacement field D. Here, we demonstrate the electrical control of cyclotron resonance (CR) in a dual-gated ABA-stacked TLG. Under the irradiation of mid-infrared light, we observed the photovoltage induced by the CR absorption through the photothermoelectric effect. The resonant magnetic field in CR is changed by applying D while keeping the carrier density constant. Numerical simulations based on the tight-binding model complement the experimental observations. We believe that the present study provides a boost to graphene-based photodetectors and photoemitters with an electrically tunable wavelength in mid-infrared to terahertz spectral ranges.
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Affiliation(s)
- Momoko Onodera
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Miho Arai
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Satoru Masubuchi
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Kei Kinoshita
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Rai Moriya
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 , Japan
| | - Tomoki Machida
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
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7
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Datta B, Adak PC, Shi LK, Watanabe K, Taniguchi T, Song JCW, Deshmukh MM. Nontrivial quantum oscillation geometric phase shift in a trivial band. SCIENCE ADVANCES 2019; 5:eaax6550. [PMID: 31667347 PMCID: PMC6799982 DOI: 10.1126/sciadv.aax6550] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2019] [Accepted: 09/20/2019] [Indexed: 06/10/2023]
Abstract
Quantum oscillations provide a notable visualization of the Fermi surface of metals, including associated geometrical phases such as Berry's phase, that play a central role in topological quantum materials. Here we report the existence of a new quantum oscillation phase shift in a multiband system. In particular, we study the ABA-trilayer graphene, the band structure of which is composed of a weakly gapped linear Dirac band, nested within a quadratic band. We observe that Shubnikov-de Haas (SdH) oscillations of the quadratic band are shifted by a phase that sharply departs from the expected 2π Berry's phase and is inherited from the nontrivial Berry's phase of the linear band. We find this arises due to an unusual filling enforced constraint between the quadratic band and linear band Fermi surfaces. Our work indicates how additional bands can be exploited to tease out the effect of often subtle quantum mechanical geometric phases.
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Affiliation(s)
- Biswajit Datta
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Pratap Chandra Adak
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Li-kun Shi
- Institute of High Performance Computing, Agency for Science, Technology, and Research, Singapore 138632, Singapore
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Justin C. W. Song
- Institute of High Performance Computing, Agency for Science, Technology, and Research, Singapore 138632, Singapore
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Singapore
| | - Mandar M. Deshmukh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
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8
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Zibrov AA, Rao P, Kometter C, Spanton EM, Li JIA, Dean CR, Taniguchi T, Watanabe K, Serbyn M, Young AF. Emergent Dirac Gullies and Gully-Symmetry-Breaking Quantum Hall States in ABA Trilayer Graphene. PHYSICAL REVIEW LETTERS 2018; 121:167601. [PMID: 30387651 DOI: 10.1103/physrevlett.121.167601] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2018] [Indexed: 06/08/2023]
Abstract
We report on quantum capacitance measurements of high quality, graphite and hexagonal boron nitride encapsulated Bernal stacked trilayer graphene devices. At zero applied magnetic field, we observe a number of electron density- and electrical displacement-tuned features in the electronic compressibility associated with changes in Fermi surface topology. At a high displacement field and low density, strong trigonal warping gives rise to three new emergent Dirac cones in each valley, which we term "gullies." The gullies are centered around the corners of a hexagonal Brillouin zone and related by threefold rotation symmetry. At low magnetic fields of B=1.25 T, the gullies manifest as a change in the degeneracy of the Landau levels from two to three. Weak incompressible states are also observed at integer filling within these triplet Landau levels, which a Hartree-Fock analysis indicates are associated with Coulomb-driven nematic phases that spontaneously break rotation symmetry.
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Affiliation(s)
- A A Zibrov
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - P Rao
- Institute of Science and Technology, Am Campus 1, 3400 Klosterneuburg, Austria
| | - C Kometter
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - E M Spanton
- California Nanosystems Institute, University of California, Santa Barbara, California 93106, USA
| | - J I A Li
- Department of Physics, Columbia University, New York, New York 10025, USA
| | - Cory R Dean
- Department of Physics, Columbia University, New York, New York 10025, USA
| | - T Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - K Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - M Serbyn
- Institute of Science and Technology, Am Campus 1, 3400 Klosterneuburg, Austria
| | - A F Young
- Department of Physics, University of California, Santa Barbara, California 93106, USA
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