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Bonilla LL, Carretero M, Mompó E. Nonlinear Charge Transport and Excitable Phenomena in Semiconductor Superlattices. ENTROPY (BASEL, SWITZERLAND) 2024; 26:672. [PMID: 39202142 PMCID: PMC11353881 DOI: 10.3390/e26080672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2024] [Revised: 07/25/2024] [Accepted: 08/07/2024] [Indexed: 09/03/2024]
Abstract
Semiconductor superlattices are periodic nanostructures consisting of epitaxially grown quantum wells and barriers. For thick barriers, the quantum wells are weakly coupled and the main transport mechanism is a sequential resonant tunneling of electrons between wells. We review quantum transport in these materials, and the rate equations for electron densities, currents, and the self-consistent electric potential or field. Depending on superlattice configuration, doping density, temperature, voltage bias, and other parameters, superlattices behave as excitable systems, and can respond to abrupt dc bias changes by large transients involving charge density waves before arriving at a stable stationary state. For other parameters, the superlattices may have self-sustained oscillations of the current through them. These oscillations are due to repeated triggering and recycling of charge density waves, and can be periodic in time, quasiperiodic, and chaotic. Modifying the superlattice configuration, it is possible to attain robust chaos due to wave dynamics. External noise of appropriate strength can generate time-periodic current oscillations when the superlattice is in a stable stationary state without noise, which is called the coherence resonance. In turn, these oscillations can resonate with a periodic signal in the presence of sufficient noise, thereby displaying a stochastic resonance. These properties can be exploited to design and build many devices. Here, we describe detectors of weak signals by using coherence and stochastic resonance and fast generators of true random sequences useful for safe communications and storage.
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Affiliation(s)
- Luis L. Bonilla
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain; (M.C.); (E.M.)
- Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - Manuel Carretero
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain; (M.C.); (E.M.)
- Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - Emanuel Mompó
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain; (M.C.); (E.M.)
- Departamento de Matemática Aplicada, Grupo de Dinámica No Lineal, Universidad Pontificia Comillas, 28015 Madrid, Spain
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Wan Q, Zeng F, Lu Z, Yu J, Chen T, Pan F. Adaptive Signal Modulation Evolved by the Inherent Nonlinearity of Phase-Change Quantum-Dot String. NANO LETTERS 2024; 24:8089-8097. [PMID: 38899810 DOI: 10.1021/acs.nanolett.4c01786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
To simulate a topological neural network handling weak signals via stochastic resonance (SR), it is necessary to introduce an inherent nonlinearity into nanoscale devices. We use the self-assembly method to successfully fabricate a phase-change quantum-dot string (PCQDS) crossing Pd/Nb:AlNO/AlNO/Nb:AlNO/Pd multilayer. The inherent nonlinearity of phase change couples with electron tunneling so that PCQDS responds to a long signal sequence in a modulated output style, in which the pulse pattern evolves to that enveloped by two sets of periodic wave characterized by neural action potential. We establish an SR mode consisting of several two-state systems in which dissipative tunneling is coupled to environment. Size oscillations owing to NbO QDs adaptively adjust barriers and wells, such that tunneling can be periodically modulated by either asymmetric energy or local temperature. When the external periodic signals are applied, the system first follows the forcing frequency. Subsequently, certain PCQDs oscillate independently and consecutively to produce complicated frequency and amplitude modulations.
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Affiliation(s)
- Qin Wan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Fei Zeng
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, China
| | - Ziao Lu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Junwei Yu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Tongjin Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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Bonilla LL, Carretero M, Mompó E. Hyperchaos, Intermittency, Noise and Disorder in Modified Semiconductor Superlattices. ENTROPY (BASEL, SWITZERLAND) 2022; 24:1702. [PMID: 36554107 PMCID: PMC9777605 DOI: 10.3390/e24121702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 11/15/2022] [Accepted: 11/19/2022] [Indexed: 06/17/2023]
Abstract
Weakly coupled semiconductor superlattices under DC voltage bias are nonlinear systems with many degrees of freedom whose nonlinearity is due to sequential tunneling of electrons. They may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices. Here we present a general sequential transport model with different voltage drops at quantum wells and barriers that includes noise and fluctuations due to the superlattice epitaxial growth. Excitability and oscillations of the current in superlattices with identical periods are due to nucleation and motion of charge dipole waves that form at the emitter contact when the current drops below a critical value. Insertion of wider wells increases superlattice excitability by allowing wave nucleation at the modified wells and more complex dynamics. Then hyperchaos and different types of intermittent chaos are possible on extended DC voltage ranges. Intrinsic shot and thermal noises and external noises produce minor effects on chaotic attractors. However, random disorder due to growth fluctuations may suppress any regular or chaotic current oscillations. Numerical simulations show that more than 70% of samples remain chaotic when the standard deviation of their fluctuations due to epitaxial growth is below 0.024 nm (10% of a single monolayer) whereas for 0.015 nm disorder suppresses chaos.
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Affiliation(s)
- Luis L. Bonilla
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
- Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - Manuel Carretero
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
- Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - Emanuel Mompó
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
- Departamento de Matemática Aplicada, Universidad Pontificia Comillas, 28015 Madrid, Spain
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Min-entropy estimation for semiconductor superlattice true random number generators. Sci Rep 2022; 12:2948. [PMID: 35194073 PMCID: PMC8864001 DOI: 10.1038/s41598-022-06815-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Accepted: 02/07/2022] [Indexed: 11/09/2022] Open
Abstract
Semiconductor superlattice true random number generator (SSL-TRNG) has an outstanding practical property on high-throughput and high-security cryptographic applications. Security in random number generators is closely related to the min-entropy of the raw output because feeding cryptographic applications with insufficient entropy leads to poor security and vulnerability to malicious attacks. However, no research has focused on the min-entropy estimation based on the stochastic model for SSL-TRNG, which is a highly recommended method for evaluating the security of a specific TRNG structure. A min-entropy estimation method is proposed in this paper for the SSL-TRNG by extending the Markov stochastic model derived from the memory effects. By calculating the boundary of the transition matrix, the min-entropy result is the average value of each sample (1 bit) is 0.2487. Moreover, the experimental results show that the estimator is accurate enough to adjust compression rate dynamically in post-processing to reach the required security level, estimating entropy on the fly rather than off-line.
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Liao Y, Wang Z, Huang N, Liu H. Near-infrared image recovery based on modulation instability in CdZnTe:V. OPTICS EXPRESS 2021; 29:31145-31155. [PMID: 34615214 DOI: 10.1364/oe.438061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2021] [Accepted: 09/02/2021] [Indexed: 06/13/2023]
Abstract
We propose a near-infrared image recovery method based on modulation instability in the photorefractive semiconductor CdZnTe:V. The formation mechanism of modulation instability in CdZnTe:V is discussed, and the theoretical gain model is derived. Theoretical results of optical image recovery at 1 µm and 1.5 µm wavelengths demonstrate that the maximum cross-correlation gain is 2.6 with a signal to noise intensity ratio of 0.1. These results suggest that our method could be one of potential aids for near-infrared imaging.
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Mompó E, Carretero M, Bonilla LL. Designing Hyperchaos and Intermittency in Semiconductor Superlattices. PHYSICAL REVIEW LETTERS 2021; 127:096601. [PMID: 34506173 DOI: 10.1103/physrevlett.127.096601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Accepted: 07/30/2021] [Indexed: 06/13/2023]
Abstract
Weakly coupled semiconductor superlattices under dc voltage bias are excitable systems with many degrees of freedom that may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices. Superlattices with identical periods exhibit current self-oscillations due to the dynamics of charge dipole waves but chaotic oscillations exist on narrow voltage intervals. They disappear easily due to variation in structural growth parameters. Based on numerical simulations, we predict that inserting two identical sufficiently separated wider wells increases superlattice excitability by allowing wave nucleation at the modified wells and more complex dynamics. This system exhibits hyperchaos and varieties of intermittent chaos in extended dc voltage ranges. Unlike in ideal superlattices, our chaotic attractors are robust and resilient against noises and against controlled random disorder due to growth fluctuations.
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Affiliation(s)
- E Mompó
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, and Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - M Carretero
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, and Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - L L Bonilla
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, and Department of Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
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New Type of Spectral Nonlinear Resonance Enhances Identification of Weak Signals. Sci Rep 2019; 9:14125. [PMID: 31575962 PMCID: PMC6773744 DOI: 10.1038/s41598-019-50767-z] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2019] [Accepted: 09/18/2019] [Indexed: 11/09/2022] Open
Abstract
Some nonlinear systems possess innate capabilities of enhancing weak signal transmissions through a unique process called Stochastic Resonance (SR). However, existing SR mechanism suffers limited signal enhancement from inappropriate entraining signals. Here we propose a new and effective implementation, resulting in a new type of spectral resonance similar to SR but capable of achieving orders of magnitude higher signal enhancement than previously reported. By employing entraining frequency in the range of the weak signal, strong spectral resonances can be induced to facilitate nonlinear modulations and intermodulations, thereby strengthening the weak signal. The underlying physical mechanism governing the behavior of spectral resonances is examined, revealing the inherent advantages of the proposed spectral resonances over the existing implementation of SR. Wide range of parameters have been found for the optimal enhancement of any given weak signal and an analytical method is established to estimate these required parameters. A reliable algorithm is also developed for the identifications of weak signals using signal processing techniques. The present work can significantly improve existing SR performances and can have profound practical applications where SR is currently employed for its inherent technological advantages.
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Yu D, Xie M, Cheng Y, Fan B. Noise-induced temporal regularity and signal amplification in an optomechanical system with parametric instability. OPTICS EXPRESS 2018; 26:32433-32441. [PMID: 30645410 DOI: 10.1364/oe.26.032433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2018] [Accepted: 11/11/2018] [Indexed: 06/09/2023]
Abstract
Noise usually has an unwelcome influence on system performance. For instance, noise inevitably affects the low-frequency mechanical freedom in optomechanical experiments. However, we investigate here the beneficial effects of thermal noise on a basic optomechanical system with parametric instability. In a regime near parametric instability, it is found that thermal noise in the mechanical freedom can sustain long-term quasi-coherent oscillations when the system would otherwise remain in the equilibrium state. In an overlapping regime of parametric instability and bistability, intermittent switching between a self-sustained oscillating state and an equilibrium can be induced by adding a certain amount of noise. When a subthreshold periodic signal is applied to the mechanics, the switching between the self-sustained oscillations and the equilibrium exhibits good periodicity at a rate that is synchronized to the signal frequency, resulting in a significant amplification of the signal. Our results deepen the understanding of the interplay between optomechanical nonlinearity and noise and provide theoretical guidance for experimental observation of noise-induced beneficial phenomena in optomechanics.
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Mompo E, Ruiz-Garcia M, Carretero M, Grahn HT, Zhang Y, Bonilla LL. Coherence Resonance and Stochastic Resonance in an Excitable Semiconductor Superlattice. PHYSICAL REVIEW LETTERS 2018; 121:086805. [PMID: 30192625 DOI: 10.1103/physrevlett.121.086805] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2017] [Indexed: 06/08/2023]
Abstract
Collective electron transport causes a weakly coupled semiconductor superlattice under dc voltage bias to be an excitable system with 2N+2 degrees of freedom: electron densities and fields at N superlattice periods plus the total current and the field at the injector. External noise of sufficient amplitude induces regular current self-oscillations (coherence resonance) in states that are stationary in the absence of noise. Numerical simulations show that these oscillations are due to the repeated nucleation and motion of charge dipole waves that form at the emitter when the current falls below a critical value. At the critical current, the well-to-well tunneling current intersects the contact load line. We have determined the device-dependent critical current for the coherence resonance from experiments and numerical simulations. We have also described through numerical simulations how a coherence resonance triggers a stochastic resonance when its oscillation mode becomes locked to a weak ac external voltage signal. Our results agree with the experimental observations.
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Affiliation(s)
- Emanuel Mompo
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, and Department of Materials Science and Engineering and Chemical Engineering, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - Miguel Ruiz-Garcia
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, and Department of Materials Science and Engineering and Chemical Engineering, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - Manuel Carretero
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, and Department of Materials Science and Engineering and Chemical Engineering, Universidad Carlos III de Madrid, 28911 Leganés, Spain
| | - Holger T Grahn
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Yaohui Zhang
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
| | - Luis L Bonilla
- Gregorio Millán Institute for Fluid Dynamics, Nanoscience and Industrial Mathematics, and Department of Materials Science and Engineering and Chemical Engineering, Universidad Carlos III de Madrid, 28911 Leganés, Spain
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