Thermal Conductivity Enhancement in MoS_{2} under Extreme Strain

In Situ Nanomechanics: Opportunities Based on Superplastic Nanomolding

In situ nanomechanics, referring to the real-time monitoring of nanomechanical deformation during quantitative mechanical testing, is a key technology for understanding the physical and mechanical properties of nanoscale materials. This perspective reviews the progress of in situ nanomechanics from the aspects of preparation and testing of nanosamples, with a major focus on one-dimensional (1D) nanostructures and discussions of their challenges. We highlight the opportunities provided by in situ nanomechanics combined with the superplastic nanomolding technique, especially in the aspects of regulating physical and chemical properties which are highly exploitable for mechanoelectronics, mechanoluminescence, piezoelectronics, piezomagnetism, piezothermography, and mechanochemistry.

Complex role of strain engineering of lattice thermal conductivity in hydrogenated graphene-like borophene induced by high-order phonon anharmonicity

Strain engineering has been used as a versatile tool for regulating the thermal transport in various materials as a result of the phonon frequency shift. On the other hand, the phononic bandgap can be simultaneously tuned by the strain, which can play a critical role in wide phononic bandgap materials due to the high-order phonon anharmonicity. In this work, we investigate the complex role of uniaxial tensile strain on the lattice thermal conductivity of hydrogenated graphene-like borophene, by using molecular dynamics simulations with a machine learning potential. Our findings highlight a novel and intriguing phenomenon that the thermal conductivity in the armchair direction is non-monotonically dependent on the uniaxial armchair strain. Specifically, we uncover that the increase of phonon group velocity and the decrease of three-phonon scattering compete with the enhancement of four-phonon scattering under armchair strain, leading to the non-monotonic dependence. The enhanced four-phonon scattering originates from the unique bridged B-H bond that can sensitively control the phononic bandgap under armchair strain. This anomalous non-monotonic strain-dependence highlights the complex interplay between different mechanisms governing thermal transport in 2D materials with large phononic bandgaps. Our study offers valuable insights for designing innovative thermal management strategies based on strain.

Soft phonon modes lead to suppressed thermal conductivity in Ag-based chalcopyrites under high pressure

Pressure is a powerful way to modulate physical properties. Understanding the effect of pressure on the thermal transport properties of thermoelectric materials is of great importance for the efficient design and optimization of thermoelectric performance. In this work, based on first-principles calculations and phonon Boltzmann transport theory, we find that the lattice thermal conductivities of Ag-based chalcopyrites AgXY2 (X = Al, Ga, and In; Y = S, Se, and Te) are dramatically suppressed by applying pressure. The inherent distorted tetrahedral configuration together with highly delocalized p-orbital electrons promotes the formation of metavalent bonding. The fact of metavalent bonding with a single bonding electron and small electron transfer between neighboring atoms leads to soft low-frequency optical phonons. With the increase of pressure, the softening of acoustic and low-frequency optical phonons induces enhanced anharmonicity and scattering channels. Such strong acoustic-optical phonon coupling results in larger phonon scattering rates and thus lowers the lattice thermal conductivity. These findings not only help unveil the underlying physical mechanisms for the anomalous thermal transport behaviors under high pressure, but also pave the way for the pressure tuning of high-performance Ag-based thermoelectric materials.

Giant acceleration of polaron transport by ultrafast laser-induced coherent phonons

Polaron formation is ubiquitous in polarized materials, but severely hampers carrier transport for which effective controlling methods are urgently needed. Here, we show that laser-controlled coherent phonon excitation enables orders of magnitude enhancement of carrier mobility via accelerating polaron transport in a prototypical material, lithium peroxide (Li2O2). The selective excitation of specific phonon modes, whose vibrational pattern directly overlap with the polaronic lattice deformation, can remarkably reduce the energy barrier for polaron hopping. The strong nonadiabatic couplings between the electronic and ionic subsystem play a key role in triggering the migration of polaron, via promoting phonon-phonon scattering in q space within sub-picoseconds. These results extend our understanding of polaron transport dynamics to the nonequilibrium regime and allow for optoelectronic devices with ultrahigh on-off ratio and ultrafast responsibility, competitive with those of state-of-the-art devices fabricated based on free electron transport.

Giant thermal switching in ferromagnetic VSe2 with programmable switching temperature

Active and reversible modulation of thermal conductivity can realize efficient heat energy management in many applications such as thermoelectrics. Using first-principles calculations, this study reports a giant thermal switching ratio of 12, much higher than previously reported values, in monolayer 2H-VSe₂ above room temperature. Detailed analysis indicates that the high thermal switching ratio is dominated by the ferromagnetic ordering induced phonon bandgap, which significantly suppresses the phonon-phonon scattering phase space across the entire vibration spectrum. The thermal switching in bulk 2H-VSe₂ is also investigated and the thermal switching ratio reaches 9.2 at the magnetic transition temperature. Both the phonon-phonon scattering space phase and phonon anharmonicity are responsible for the 9.2-fold thermal switching. This study advances the understanding of heat energy transport in two-dimensional ferromagnets, and also provides new insight into heat energy control and conversion.

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.

Recent progress of two-dimensional heterostructures for thermoelectric applications

The rapid development of synthesis and fabrication techniques has opened up a research upsurge in two-dimensional (2D) material heterostructures, which have received extensive attention due to their superior physical and chemical properties. Currently, thermoelectric energy conversion is an effective means to deal with the energy crisis and increasingly serious environmental pollution. Therefore, an in-depth understanding of thermoelectric transport properties in 2D heterostructures is crucial for the development of micro-nano energy devices. In this review, the recent progress of 2D heterostructures for thermoelectric applications is summarized in detail. Firstly, we systematically introduce diverse theoretical simulations and experimental measurements of the thermoelectric properties of 2D heterostructures. Then, the thermoelectric applications and performance regulation of several common 2D materials, as well as in-plane heterostructures and van der Waals heterostructures, are also discussed. Finally, the challenges of improving the thermoelectric performance of 2D heterostructures materials are summarized, and related prospects are described.

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been employed to modulate the interlayer CT and ET, including electrical gating and modifying interlayer spacing, but with limited extent in their controllability. Here, we report a novel method to modulate these transfers in the MoS₂/WS₂ heterobilayer by applying compressive strain under hydrostatic pressure. Raman and photoluminescence measurements, combined with density functional theory calculations, show pressure-enhanced interlayer interaction of the heterobilayer. Heterobilayer-to-monolayer photoluminescence intensity ratio (η) of WS₂ decreases by five times up to ≈4 GPa, suggesting enhanced ET, whereas it increases by an order of magnitude at higher pressures and reaches almost unity. Theoretical calculations show that orbital switching and charge transfers in the heterobilayer's hybridized conduction band are responsible for the non-monotonic modulation of the transfers. Our findings provide a compelling approach toward effective mechanical control of CT and ET in 2D excitonic devices.

Large Thermal Conductivity Switching in Ferroelectrics by Electric Field-Triggered Crystal Symmetry Engineering

A convenient, reversible, fast, and wide-range switching of thermal conductivity is desired for efficient heat energy management. However, traditional methods, such as temperature-induced phase transition and chemical doping, have many limitations, e.g., the lack of continuous tunability over a wide temperature range and low switching speed. In this work, a strategy of electric field-driven crystal symmetry engineering to efficiently modulate thermal conductivity is reported with first-principles calculations. By simply changing the direction of an external electric field loaded in ferroelectric PbZr_0.5Ti_0.5O₃, near the morphotropic phase boundary composition, we obtain the largest switching of thermal conductivity for ferroelectric materials at room temperature based on the dual-phonon theory, i.e., normal and diffuson-like phonons, with three different criteria. The calculation results indicate that with decreasing crystal symmetry, the degeneracy of phonon modes reduces and the avoid-crossing behavior of phonon branches enhances, leading to the increase of diffuson-like phonons and weighted phonon-phonon scattering phase space. A thermal switch prototype based on PbZr_0.5Ti_0.5O₃ is further shown that can protect the Li-ion battery by modulating its temperature up to 17.5 °C. Our studies would pave the way for designing next-generation thermal switch with high speed, a wide temperature range, and a large switching ratio.

Electrically-driven robust tuning of lattice thermal conductivity

The two-dimensional (2D) materials, represented by graphene, stand out in the electrical industry applications of the future and have been widely studied. As commonly existing in electronic devices, the electric field has been extensively utilized to modulate the performance. However, how the electric field regulates thermal transport is rarely studied. Herein, we investigate the modulation of thermal transport properties by applying an external electric field ranging from 0 to 0.4 V Å^-1, with bilayer graphene, monolayer silicene, and germanene as study cases. The monotonically decreasing trend of thermal conductivity in all three materials is revealed. A significant effect on the scattering rate is found to be responsible for the decreased thermal conductivity driven by the electric field. Further evidence shows that the reconstruction of internal electric field and generation of induced charges lead to increased scattering rate from strong phonon anharmonicity. Thus, the ultralow thermal conductivity emerges with the application of external electric fields. Applying an external electric field to regulate thermal conductivity illustrates a constructive idea for highly efficient thermal management.

Role of mechanical deformation in the thermal transport of sI-type methane hydrate

Natural gas hydrates (NGHs) are rising as an unconventional energy resource. The fundamental thermal characteristics of NGHs are of importance for natural gas exploitation from permafrost and oceanic sediments that are geomechanically deformed. Here, utilizing classic molecular dynamics simulations with all-atom (AA) and coarse-grained (CG) models of the methane guest molecule, the effects of mechanical strain on the thermal conductivity of sI-type methane hydrate are for the first time examined. Upon triaxial tension and compression, methane hydrate exhibits strong asymmetry in the stress responses. As the triaxial loads go from compression to tension, a reduction trend in the thermal conductivity is revealed for methane hydrate with both AA and CG models of methane, within a maximum reduction of over 44%. This reduction is because triaxial strain from compression to tension softens the phonon modes. Interestingly, there is a sudden rise in thermal conductivity at critical triaxial strain of 0.06, originating from that, at which, the phonon modes are hardened and the peaks of radial distribution functions are shifted back. This study provides important information on the thermal conductivity of methane hydrate, which is helpful for the practical production of natural gas from geo-deformed NGH-bearing sediments via a heating technique as well as evaluating their stability.

Toward Optimal Heat Transfer of 2D-3D Heterostructures via van der Waals Binding Effects

Two-dimensional (2D) materials and their heterogeneous integration have enabled promising electronic and photonic applications. However, significant thermal challenges arise due to numerous van der Waals (vdW) interfaces limiting the dissipation of heat generated in the device. In this work, we investigate the vdW binding effect on heat transport through a MoS₂-amorphous silica heterostructure. We show using atomistic simulations that the cross-plane thermal conductance starts to saturate with the increase of vdW binding energy, which is attributed to substrate-induced localized phonons. With these atomistic insights, we perform device-level heat transfer optimizations. Accordingly, we identify a regime, characterized by the coupling of in-plane and cross-plane heat transport mediated by vdW binding energy, where maximal heat dissipation in the device is achieved. These results elucidate fundamental heat transport through the vdW heterostructure and provide a pathway toward optimizing thermal management in 2D nanoscale devices.

Quasi-one-dimensional thermal transport in trigonal selenium crystal

The lattice thermal conductivity in van der Waals crystal selenium is investigated by solving the phonon Boltzmann transport equation combined with the first-principles calculations. The lattice thermal conductivity of selenium along the perpendicular to the chain direction is extremely low, which is 5 times lower than the conductivity in the parallel direction, showing a clear quasi-one-dimensional heat transfer feature. The small phonon group velocity, acoustic-optical phonon branches mixing and bonding anharmonicity along the perpendicular to the chain direction contribute to the high anisotropy in thermal conductivity. Moreover, particles with several nanometers can introduce boundary scattering to a large portion of phonons modes in selenium, where the lattice thermal conductivity is greatly reduced. Both the unique one-dimensional thermal transport property and low thermal conductivity make selenium to be a potential thermal management in thermoelectric and other electronic technologies.

Decoupling of the Electrical and Thermal Transports in Strongly Coupled Interlayer Materials

Thermoelectric materials which enable heat-to-electricity conversion are fundamentally important for heat management in semiconductor devices. Achieving high thermoelectric performance requires blocking the thermal transport and maintaining the high electronic transport, but it is a challenge to satisfy both criteria simultaneously. We propose that tuning the interlayer distance can effectively modulate the electrical and thermal conductivities. We find group IV-VI and V semiconductors with a moderate interlayer distance can exhibit high thermoelectric performance. Taking SnSe as an example, we reveal that in the out-of-plane direction the delocalized p_z orbitals combined with the relatively small interlayer distance lead to overlapping of the antibonding state wave functions, which is beneficial for high electronic transport. However, because of the breakdown of the chemical bond, the out-of-plane thermal conductivity is small. This study provides a strategy to enhance electrical conductivity without increasing thermal conductivity and thus sheds light on the design of thermoelectric devices.

Hydrostatic pressure effect of photocarrier dynamics in GaAs probed by time-resolved terahertz spectroscopy

Pressure effects on photocarrier dynamics such as interband relaxations and intraband cooling in GaAs have been investigated using in situ time-resolved terahertz spectroscopy with a diamond anvil cell. The interband photocarrier lifetime significantly decreases by nearly two orders of magnitude as the external hydrostatic pressure is increased up to 10 GPa. Considerable pressure tuning for the intervalley scattering processes has also been observed, and the time constants under different pressures are extracted based on the three-state rate model. This work provides new perspectives on tailoring nonequilibrium carrier dynamics in semiconductors using hydrostatic pressure and may serve as the impetus for the development of high-pressure terahertz spectroscopy.

Thermo-mechanical correlation in two-dimensional materials

Two-dimensional (2D) materials have received tremendous attention from the research community in the past decades, because of their numerous striking physical, chemical and mechanical properties and promising potential in a wide range of applications. This field is strongly interdisciplinary, requiring efficient integration of knowledge with different insights. In this review, we summarize the up-to-date research on the thermal and mechanical properties and thermo-mechanical correlation in 2D materials, including both theoretical and experimental insight. Firstly, the mechanical properties of 2D nanomaterials are discussed, in which the underlying physics is summarized. Then, we discuss the impacts of thermal fluctuation on the mechanical properties. Next, from experimental points of view, we present the methods to introduce strain in 2D materials experimentally and the experimental tools to measure the degree of strain. Finally, we discuss the fundamental phonon and thermal properties of 2D materials, including the strain effects on phonon dispersion, phonon hydrodynamic behavior, phonon topological feature, ballistic thermal conductance and diffusive thermal conductivity. This article presents an advanced understanding of the mechanical and thermal properties of 2D materials, which provides new opportunities for promoting their applications in nanoscale electronic, optoelectronic, and thermal functional devices.

Stronger Interlayer Interactions Contribute to Faster Hot Carrier Cooling of Bilayer Graphene under Pressure

We perform femtosecond pump-probe spectroscopy to in situ investigate the ultrafast photocarrier dynamics in bilayer graphene and observe an acceleration of energy relaxation under pressure. In combination with in situ Raman spectroscopy and ab initio molecular dynamics simulations, we reveal that interlayer shear and breathing modes have significant contributions to the faster hot-carrier relaxations by coupling with the in-plane vibration modes under pressure. Our work suggests that further understanding the effect of interlayer interaction on the behaviors of electrons and phonons would be critical to tailor the photocarrier dynamic properties of bilayer graphene.

2D Materials and Heterostructures at Extreme Pressure

2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.

Optimisation of the thermoelectric efficiency of zirconium trisulphide monolayers through unixial and biaxial strain

The goal of this work is to investigate the influence of mechanical deformation on the electronic and thermoelectric properties of ZrS₃ monolayers. We employ density functional theory (DFT) calculations at the hybrid HSE06 level to evaluate the response of the electronic band gap and mobilities, as well as the thermopower, the electrical conductivity, the phononic and electronic contributions to the thermal conductivity, and the heat capacity. Direct examination of the electronic band structures reveals that the band gap can be increased by up to 17% under uniaxial strain, reaching a maximum value of 2.32 eV. We also detect large variations in the electrical conductivity, which is multiplied by 3.40 under a 4% compression, but much smaller changes in the Seebeck coefficient. The effects of mechanical deformation on thermal transport are even more significant, with a nearly five-fold reduction of the lattice thermal conductivity under a biaxial strain of -4%. By harnessing a combination of these effects, the thermoelectric figure of merit of strained ZrS₃ could be doubled with respect to the unstrained material.

Pressure-Dependent Behavior of Defect-Modulated Band Structure in Boron Arsenide

The recent observation of unusually high thermal conductivity exceeding 1000 W m^-1 K^-1 in single-crystal boron arsenide (BAs) has led to interest in the potential application of this semiconductor for thermal management. Although both the electron/hole high mobilities have been calculated for BAs, there is a lack of experimental investigation of its electronic properties. Here, a photoluminescence (PL) measurement of single-crystal BAs at different temperatures and pressures is reported. The measurements reveal an indirect bandgap and two donor-acceptor pair (DAP) recombination transitions. Based on first-principles calculations and time-of-flight secondary-ion mass spectrometry results, the two DAP transitions are confirmed to originate from Si and C impurities occupying shallow energy levels in the bandgap. High-pressure PL spectra show that the donor level with respect to the conduction band minimum shrinks with increasing pressure, which affects the release of free carriers from defect states. These findings suggest the possibility of strain engineering of the transport properties of BAs for application in electronic devices.

Straintronic effect for superconductivity enhancement in Li-intercalated bilayer MoS2

In this study, ab initio calculations were performed to show that the superconductivity in Li-intercalated bilayer MoS₂ could be enhanced by applying either compressive or tensile strain. Moreover, the mechanism for superconductivity enhancement for the tensile strain case was found to be different than that of the compressive strain case. Enhanced electron phonon coupling (EPC) under tensile strain could be explained by an increase in the nesting function involved with the change in the Fermi surface topology in a wide range of Brillouin zones. The superconducting transition temperature T _c of 0.46 K at zero strain increased up to 9.12 K under a 6.0% tensile strain. Meanwhile, the enhancement in compressive strain was attributed to the increase in intrinsic electron phonon matrix elements. Furthermore, the contribution from interband scattering was large, which suggested the importance of electron pockets on the Fermi surface. Finally, 80% of the total EPC (λ = 0.98) originated from these pockets and the estimated T _c was 13.50 K.

First principle investigation of the influence of sulfur vacancies on thermoelectric properties of single layered MoS2

Thermoelectric properties of single layered transition metal dichalchogenide MoS2 are investigated on the basis of ab initio calculations combined with Landauer formalism. The focus is made on sulfur vacancy defects that are experimentally observed to be largely present in materials especially in exfoliated two dimensional MoS2 compounds. The impact of these defects on phonon and electron transport properties is investigated here using a realistic description of their natural disordering. It is observed that phonons tend to localize around defects which induce a drastic reduction in thermal conductivity. For p type doping the figure of merit is almost insensitive to the defects while for n type doping the figure of merit rapidly tends to be zero for the increasing length of the system. These features are linked with a larger scattering of the electrons in the conduction band than that of holes in the valence band.

Thermal Rectification in Asymmetric Graphene/Hexagonal Boron Nitride van der Waals Heterostructures

Graphene/hexagonal boron nitride (h-BN) heterostructures assembled by van der Waals (vdW) interactions show numerous unique physical properties such as quantum Hall effects and exotic correlated states, which have promising potential applications in the design of novel electronic devices. Understanding thermal transport in such junctions is critical to control the performance and stability of prospective nanodevices. In this work, using nonequilibrium molecular dynamics simulations, we systematically investigate the thermal transport in asymmetric graphene/h-BN vdW heterostructures. It is found that the heat prefers to flow from the monolayer to the multilayer regions, resulting in a significant thermal rectification (TR) effect. To determine the optimum conditions for TR, the influences of sample length, defect density, asymmetric degree, ambient temperature, and vdW interaction strength are studied. Particularly, we found that the TR ratio could be improved by about 1 order of magnitude via increasing the coupling strength from 1 to 10, which clearly distinguishes from the commonly held notion that the TR ratio is practically insensitive or even decreasing with the interaction strength. Detailed spectral analysis reveals that this unexpected increase of the TR ratio can be attributed to heavily modified phonon properties of encased graphene due to enhanced interlayer coupling. Our results elucidate the importance of vdW interactions to heat conduction in nanostructures.

Tailoring phononic, electronic, and thermoelectric properties of orthorhombic GeSe through hydrostatic pressure

In this paper, we systematically investigate the effect of hydrostatic pressure on the phononic and electronic transport properties of orthorhombic p-type GeSe using first-principles based Boltzmann transport equation approach. It is found that the lattice thermal conductivities along the a and c directions increase with pressure, whereas it experiences a decrease along the b direction. This anomalous pressure dependent lattice thermal conductivity is attributed to the combined effect of enhanced phonon group velocity and reduced phonon lifetime. Additionally, the optical phonon branches have remarkable contributions to the total lattice thermal conductivity. The electronic transport calculations indicate that the Seebeck coefficient undergoes a sign change from p-type to n-type along the a direction under pressure, and a dramatic enhancement of the power factor is observed due to the boost of electrical conductivity. The predicted ZT values along the a, b, and c directions are 1.54, 1.09, and 1.01 at 700 K and 8 GPa, respectively, which are about 14, 7.3, and 1.9 times higher than those at zero pressure at experimental carrier concentration of ~10¹⁸ cm^-3. Our study is expected to provide a guide for further optimization of the thermal and charge transport properties through hydrostatic pressure.

Phonon–phonon scattering selection rules and control: an application to nanofriction and thermal transport

Phonon–phonon scattering processes are the crucial phenomena which account for phonon decay, thermal expansion, heat transfer, protein dynamics, spin relaxation and related quantities. In this work, we show how the symmetries of the system determine which scattering processes are allowed at any order of anharmonic approximation, irrespective of the chemical composition. We also discuss how to control the system symmetries to switch on and off any single scattering process. We apply the presented results to the study and control of nanoscale intrinsic friction and thermal transport in lamellar van der Waals transition metal dichalcogenides. Thanks to its general formulation, the presented framework expands the materials science tool set for the design of nanoengineered thermally-active materials, irrespective of the specific chemical composition and atomic topology.

Symmetry-based selection rules are a guide on how to switch on or off multi-phonon scattering processes.