Photoinduced Rashba Spin-to-Charge Conversion via an Interfacial Unoccupied State

Pseudo-Edelstein effect in disordered silicene

The 'pseudo-Edelstein' effect by which charge currentJ_xconverts to pseudo-spin polarization,τ_z, has been investigated theoretically for an infinite sheet of silicene. Calculations have been performed for conductor phase of silicene within the Dirac point approximation and in the presence of normally applied electric field. The latter conversion as an outcome of voltage-texture correlation in buckled silicene has been considered as 'pseudo-Edelstein'response function. This response function have been calculated in the context of Kubo formalism in the presence of vertex corrections. It has been verified that the charge current results in normal pseudo-spin polarization i.e. sublattice population imbalance. According to obtained results in the presence of vertex corrections, 'pseudo-Edelstein' response function is weakened by several orders of magnitude with non-identical different valley contributions. In addition, extra small oscillations of obtained response function have been observed. Nevertheless, when the vertex corrections is off, the 'pseudo-Edelstein' response function is strengthened by several orders of magnitudes with the same different valleys contributions and the extra small oscillations of obtained response function are disappeared. These findings show that 'pseudo-Edelstein' response function is weakened by the intrinsic Rashba spin-orbit interaction which originally arises from buckling in silicene. As silicene has the lowest buckling among the graphene-like Dirac materials so it can be expected that 'pseudo-Edelstein' effect could be realized in a more pronounced manner in silicene. Obviously, this novel type of conversion not only can be employed in the future data transfer technology but also opens a sensible way to control of electrons populations electrically in realistic disordered silicene samples. The optical absorption spectroscopy could be taken as an efficient experimental plan of action by which the results of present work can be checked out.

Proposal for Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin Valves

Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide a proof of principle of an electrical detection scheme of spin-charge conversion that enables full disentanglement of competing spin-orbit coupling (SOC) transport phenomena in diffusive lateral channels, i.e., the inverse spin Hall effect and the spin galvanic effect. A suitable geometry in an applied oblique magnetic field is shown to provide direct access to SOC transport coefficients through a symmetry analysis of the output nonlocal resistance. The scheme is robust against tilting of the spin-injector magnetization, disorder, and spurious non-spin-related contributions to the nonlocal signal and can be used to probe spin-charge conversion effects in both spin-valve and hybrid optospintronic devices.

Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling

Among the perovskite oxide family, KTaO₃ (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we report a novel conducting interface by placing KTO with another insulator, LaVO₃ (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observations of two fold AMR and PHE at low magnetic fields (B) is similar to those obtained for topological systems and can be intuitively understood using a phenomenological theory for a Rashba spin-split system. Our experimental data show a B² dependence of AMR and PHE at low magnetic fields that could also be explained based on our model. At high fields (~8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra.

Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO₃ and KTaO₃, where strong spin-orbit coupling and relativistic nature of the electrons in the 2DEG, leading to anisotropic magnetoresistance and planar Hall effect.