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Huber N, Leeb V, Bauer A, Benka G, Knolle J, Pfleiderer C, Wilde MA. Quantum oscillations of the quasiparticle lifetime in a metal. Nature 2023; 621:276-281. [PMID: 37532938 DOI: 10.1038/s41586-023-06330-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Accepted: 06/15/2023] [Indexed: 08/04/2023]
Abstract
Following nearly a century of research, it remains a puzzle that the low-lying excitations of metals are remarkably well explained by effective single-particle theories of non-interacting bands1-4. The abundance of interactions in real materials raises the question of direct spectroscopic signatures of phenomena beyond effective single-particle, single-band behaviour. Here we report the identification of quantum oscillations (QOs) in the three-dimensional topological semimetal CoSi, which defy the standard description in two fundamental aspects. First, the oscillation frequency corresponds to the difference of semiclassical quasiparticle (QP) orbits of two bands, which are forbidden as half of the trajectory would oppose the Lorentz force. Second, the oscillations exist up to above 50 K, in strong contrast to all other oscillatory components, which vanish below a few kelvin. Our findings are in excellent agreement with generic model calculations of QOs of the QP lifetime (QPL). Because the only precondition for their existence is a nonlinear coupling of at least two electronic orbits, for example, owing to QP scattering on defects or collective excitations, such QOs of the QPL are generic for any metal featuring Landau quantization with several orbits. They are consistent with certain frequencies in topological semimetals5-9, unconventional superconductors10,11, rare-earth compounds12-14 and Rashba systems15, and permit to identify and gauge correlation phenomena, for example, in two-dimensional materials16,17 and multiband metals18.
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Affiliation(s)
- Nico Huber
- TUM School of Natural Sciences, Department of Physics, Technical University of Munich, Garching, Germany
| | - Valentin Leeb
- TUM School of Natural Sciences, Department of Physics, Technical University of Munich, Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Munich, Germany
| | - Andreas Bauer
- TUM School of Natural Sciences, Department of Physics, Technical University of Munich, Garching, Germany
- Centre for Quantum Engineering (ZQE), Technical University of Munich, Garching, Germany
| | - Georg Benka
- TUM School of Natural Sciences, Department of Physics, Technical University of Munich, Garching, Germany
| | - Johannes Knolle
- TUM School of Natural Sciences, Department of Physics, Technical University of Munich, Garching, Germany.
- Munich Center for Quantum Science and Technology (MCQST), Munich, Germany.
- Blackett Laboratory, Imperial College London, London, UK.
| | - Christian Pfleiderer
- TUM School of Natural Sciences, Department of Physics, Technical University of Munich, Garching, Germany.
- Munich Center for Quantum Science and Technology (MCQST), Munich, Germany.
- Centre for Quantum Engineering (ZQE), Technical University of Munich, Garching, Germany.
| | - Marc A Wilde
- TUM School of Natural Sciences, Department of Physics, Technical University of Munich, Garching, Germany.
- Centre for Quantum Engineering (ZQE), Technical University of Munich, Garching, Germany.
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Liu L, Chu Y, Yang G, Yuan Y, Wu F, Ji Y, Tian J, Yang R, Watanabe K, Taniguchi T, Long G, Shi D, Liu J, Shen J, Lu L, Yang W, Zhang G. Quantum oscillations in field-induced correlated insulators of a moiré superlattice. Sci Bull (Beijing) 2023; 68:1127-1133. [PMID: 37210331 DOI: 10.1016/j.scib.2023.05.006] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Revised: 04/03/2023] [Accepted: 04/26/2023] [Indexed: 05/22/2023]
Abstract
We report an observation of quantum oscillations (QOs) in the correlated insulators with valley anisotropy of twisted double bilayer graphene (TDBG). The anomalous QOs are best captured in the magneto resistivity oscillations of the insulators at v = -2, with a period of 1/B and an oscillation amplitude as high as 150 kΩ. The QOs can survive up to ∼10 K, and above 12 K, the insulating behaviors are dominant. The QOs of the insulator are strongly D dependent: the carrier density extracted from the 1/B periodicity decreases almost linearly with D from -0.7 to -1.1 V/nm, suggesting a reduced Fermi surface; the effective mass from Lifshitz-Kosevich analysis depends nonlinearly on D, reaching a minimal value of 0.1 me at D = ∼ -1.0 V/nm. Similar observations of QOs are also found at v = 2, as well as in other devices without graphite gate. We interpret the D sensitive QOs of the correlated insulators in the picture of band inversion. By reconstructing an inverted band model with the measured effective mass and Fermi surface, the density of state at the gap, calculated from thermal broadened Landau levels, agrees qualitatively with the observed QOs in the insulators. While more theoretical understandings are needed in the future to fully account for the anomalous QOs in this moiré system, our study suggests that TDBG is an excellent platform to discover exotic phases where correlation and topology are at play.
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Affiliation(s)
- Le Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Guang Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yalong Yuan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Fanfan Wu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Gen Long
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jianpeng Liu
- School of Physical Sciences and Technology, ShanghaiTech University, Shanghai 200031, China; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China.
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China.
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Quantum oscillations in the magnetization and density of states of insulators. Proc Natl Acad Sci U S A 2022; 119:e2208373119. [PMID: 36215507 PMCID: PMC9586326 DOI: 10.1073/pnas.2208373119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
The observation of [Formula: see text]-periodic behavior in Kondo insulators and semiconductor quantum wells challenges the conventional wisdom that quantum oscillations (QOs) necessarily arise from Fermi surfaces in metals. We revisit recently proposed theories for this phenomenon, focusing on a minimal model of an insulator with a hybridization gap between two opposite-parity light and heavy mass bands with an inverted band structure. We show that there are characteristic differences between the QO frequencies in the magnetization and the low-energy density of states (LE-DOS) of these insulators, in marked contrast to metals where all observables exhibit oscillations at the same frequency. The magnetization oscillations arising from occupied Landau levels occur at the same frequency that would exist in the unhybridized case. The LE-DOS oscillations in a disorder-free system are dominated by gap-edge states and exhibit a beat pattern between two distinct frequencies at low temperature. Disorder-induced in-gap states lead to an additional contribution to the DOS at the unhybridized frequency. The temperature dependence of the amplitude and phase of the magnetization and DOS oscillations are also qualitatively different and show marked deviations from the Lifshitz-Kosevich form well known in metals. We also compute transport to ensure that we are probing a regime with insulating upturns in the direct current (DC) resistivity.
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Zhu J, Li T, Young AF, Shan J, Mak KF. Quantum Oscillations in Two-Dimensional Insulators Induced by Graphite Gates. PHYSICAL REVIEW LETTERS 2021; 127:247702. [PMID: 34951797 DOI: 10.1103/physrevlett.127.247702] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2021] [Accepted: 11/04/2021] [Indexed: 06/14/2023]
Abstract
We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different 2D systems, including mono- and bilayer T_{d}-WTe_{2}, MoTe_{2}/WSe_{2} moiré heterobilayers, and Bernal-stacked bilayer graphene, which all share a similar graphite-gated geometry. We find that the 2D systems, when tuned near an insulating state, generically exhibit magnetoresistance oscillations corresponding to a high-density Fermi surface, in contravention of naïve band theory. Simultaneous measurement of the resistivity of the graphite gates shows that the oscillations of the sample layer are precisely correlated with those of the graphite gates. Further supporting this connection, the oscillations are quenched when the graphite gate is replaced by a low-mobility metal, TaSe_{2}. The observed phenomenon arises from the oscillatory behavior of graphite density of states, which modulates the device capacitance and, as a consequence, the carrier density in the sample layer even when a constant electrochemical potential is maintained between the sample and the gate electrode. Oscillations are most pronounced near insulating states where the resistivity is strongly density dependent. Our study suggests a unified mechanism for quantum oscillations in graphite-gated 2D insulators based on electrostatic sample-gate coupling.
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Affiliation(s)
- Jiacheng Zhu
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - Tingxin Li
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - Andrea F Young
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
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Sun K, Bao ZQ, Yu W, Hawkins SD, Klem JF, Pan W, Shi X. Charge transport spectra in superconductor-InAs/GaSb-superconductor heterostructures. NANOTECHNOLOGY 2021; 33:085703. [PMID: 34787108 DOI: 10.1088/1361-6528/ac3a36] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Accepted: 11/15/2021] [Indexed: 06/13/2023]
Abstract
Charge transport physics in InAs/GaSb bi-layer systems has recently attracted attention for the experimental search for two-dimensional topological superconducting states in solids. Here we report measurement of charge transport spectra of nano devices consisting of an InAs/GaSb quantum well sandwiched by tantalum superconductors. We explore the current-voltage relation as a function of the charge-carrier density in the quantum well controlled by a gate voltage and an external magnetic field. We observe three types of differential resistance peaks, all of which can be effectively tuned by the external magnetic field, and, however, two of which appear at electric currents independent of the gate voltage, indicating a dominant mechanism from the superconductor and the system geometry. By analyzing the spectroscopic features, we find that the three types of peaks identify Andreev reflections, quasi-particle interference, and superconducting transitions in the device, respectively. Our results provide a basis for further exploration of possible topological superconducting state in the InAs/GaSb system.
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Affiliation(s)
- Kuei Sun
- Department of Physics, The University of Texas at Dallas, Richardson, TX 75080, United States of America
| | - Zhi-Qiang Bao
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, People's Republic of China
| | - Wenlong Yu
- Sandia National Laboratories, Albuquerque, NM 87185, United States of America
| | - Samuel D Hawkins
- Sandia National Laboratories, Albuquerque, NM 87185, United States of America
| | - John F Klem
- Sandia National Laboratories, Albuquerque, NM 87185, United States of America
| | - Wei Pan
- Sandia National Laboratories, Livermore, CA 94551, United States of America
| | - Xiaoyan Shi
- Department of Physics, The University of Texas at Dallas, Richardson, TX 75080, United States of America
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Leeb V, Polyudov K, Mashhadi S, Biswas S, Valentí R, Burghard M, Knolle J. Anomalous Quantum Oscillations in a Heterostructure of Graphene on a Proximate Quantum Spin Liquid. PHYSICAL REVIEW LETTERS 2021; 126:097201. [PMID: 33750154 DOI: 10.1103/physrevlett.126.097201] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Accepted: 02/01/2021] [Indexed: 06/12/2023]
Abstract
The quasi-two-dimensional Mott insulator α-RuCl_{3} is proximate to the sought-after Kitaev quantum spin liquid (QSL). In a layer of α-RuCl_{3} on graphene, the dominant Kitaev exchange is further enhanced by strain. Recently, quantum oscillation (QO) measurements of such α-RuCl_{3} and graphene heterostructures showed an anomalous temperature dependence beyond the standard Lifshitz-Kosevich (LK) description. Here, we develop a theory of anomalous QO in an effective Kitaev-Kondo lattice model in which the itinerant electrons of the graphene layer interact with the correlated magnetic layer via spin interactions. At low temperatures, a heavy Fermi liquid emerges such that the neutral Majorana fermion excitations of the Kitaev QSL acquire charge by hybridizing with the graphene Dirac band. Using ab initio calculations to determine the parameters of our low-energy model, we provide a microscopic theory of anomalous QOs with a non-LK temperature dependence consistent with our measurements. We show how remnants of fractionalized spin excitations can give rise to characteristic signatures in QO experiments.
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Affiliation(s)
- V Leeb
- Department of Physics TQM, Technische Universität München, James-Franck-Straße 1, D-85748 Garching, Germany
| | - K Polyudov
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - S Mashhadi
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - S Biswas
- Institut für Theoretische Physik, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany
| | - Roser Valentí
- Institut für Theoretische Physik, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany
| | - M Burghard
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - J Knolle
- Department of Physics TQM, Technische Universität München, James-Franck-Straße 1, D-85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany
- Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
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Wang P, Yu G, Jia Y, Onyszczak M, Cevallos FA, Lei S, Klemenz S, Watanabe K, Taniguchi T, Cava RJ, Schoop LM, Wu S. Landau quantization and highly mobile fermions in an insulator. Nature 2021; 589:225-229. [DOI: 10.1038/s41586-020-03084-9] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2019] [Accepted: 10/21/2020] [Indexed: 11/09/2022]
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