Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance

Two-dimensional (2D) materials provide a new strategy for developing photodetectors at the nanoscale. The electronic and optical properties of black phosphorus (BP), indium selenide (InSe) monolayer and BP/InSe heterojunction were investigated via first-principles calculations. The geometric characteristic shows that the BP, InSe monolayer and BP/InSe heterojunction have high structural symmetry, and the band gap values are 1.592, 2.139, and 1.136 eV, respectively. The results of band offset, band decomposed charge and electrostatic potential imply that the heterojunction structure can effectively inhibit the recombination of electron--hole pairs, which is beneficial for carrier mobility of photoelectric devices. Moreover, the optical properties, including refractive index, reflectivity, electron energy loss, extinction coefficient, absorption coefficient and photon optical conductivity, show excellent performance. These findings reveal the optimistic application potential for future photoelectric devices. The results of the present study provide new insight into challenges related to the peculiar behavior of the aforementioned materials with applications.

Generating large out-of-plane piezoelectric properties of atomically thin MoS2via defect engineering

We calculated the piezoelectric properties of asymmetrically defected MoS₂ using density functional theory. By creating uneven numbers of defects on either side of two-dimensional MoS₂, the out-of-plane centrosymmetry of the charge distribution is clearly broken, and the out-of-plane piezoelectric response is induced. The largest out-of-plane piezoelectric response is associated with the highest defect ratio for MoS₂ to be semiconducting. We calculated the critical defect density of the metal-insulator transition of the asymmetrically defected MoS₂ to be 9.90 × 10¹⁴ cm^-2 and chemical formula MoS_1.22. The d₃₃ of the multilayer of optimally defected MoS₂ is found to be greater than those of AlN and ZnO, and in the same order of magnitude as lead zirconate titanate. All two-dimensional transition metal dichalcogenides can in principle be fabricated as piezoelectric with this approach. The required defect engineering is readily available with various types of ion irradiation or plasma treatment. By controlling the dose of the ion, the defect ratio and hence the piezoelectricity can be tuned. Such asymmetrically defected transition metal dichalcogenides can easily be integrated into two-dimensional transition metal dichalcogenide based devices, which is hard for conventional piezoelectric thin films to rival.

Single-Layer MoS2 Grown on Atomically Flat SrTiO3 Single Crystal for Enhanced Trionic Luminescence

The elaborate interface interactions can be critical in determining the achievable functionality of a semiconductor heterojunction (SH), particularly when two-dimensional material is enclosed in the system and its thickness is at an atomic extreme. In this work, we have successfully constructed a SH model system composed of typical transition-metal chalcogenide (TMDs) and transition metal oxides (TMO) by directly growing molybdenum sulfide (MoS₂) nanosheets on atomically flat strontium titanate (SrTiO₃) single crystal substrates through a conventional chemical vapor deposition (CVD) synthetic method. Multiple measurements have demonstrated the uniform monolayer thickness and single crystallinity of the MoS₂ nanosheets as well as the atomic flatness of the heterojunction surface, both characterizing an extremely high quality of the interface. Clear evidence have been obtained for the electron transfer from the MoS₂ adlayer to the SrTiO₃ substrate which varies against the interface conditions. More importantly, the photoluminescence of MoS₂ is significantly tailored, which is correlated with both the cleanness of the interface and the crystal orientation of the SrTiO₃ substrate. These results not only shed fresh lights on the structure-property relationship of the TMDs/TMO heterostructures but also manifest the importance of the ideal interface structure for a hybridized system.

Direct Bandgap-like Strong Photoluminescence from Twisted Multilayer MoS2 Grown on SrTiO3

While direct bandgap monolayer 2D transition metal dichalcogenides (TMDs) have emerged as an important optoelectronic material due to strong light-matter interactions, their multilayer counterparts exhibit an indirect bandgap resulting in poor photon emission quantum yield. We report strong direct bandgap-like photoluminescence at ∼1.9 eV from multilayer MoS₂ grown on SrTiO₃, whose intensity is significantly higher than that observed in multilayer MoS₂/SiO₂. Using high-resolution electron microscopy we observe interlayer twist and >8% increase in the van der Waals gap, which leads to weaker interlayer coupling. This affects the evolution of the band structure in multilayer MoS₂ as probed by transient absorption spectroscopy, causing higher photo carrier recombination at the direct gap. Our results provide a platform that could enable multilayer TMDs for robust optical device applications.

Temperature Dependent Structural Evolution of WSe2: A Synchrotron X-ray Diffraction Study

A thorough investigation of the structural parameters of micromechanically exfoliated multilayer WSe2 flakes was undertaken between 400 K to 110 K. Crystal structure of WSe2 remains in the trigonal prismatic structure in this temperature range, however, with a clear difference in the temperature dependence of the in-plane a, and the out-of-plane c, lattice parameters. The linear coefficients of thermal expansion of a and c are 5.132 × 10−6/K and 8.105 × 10−6/K, respectively. The temperature dependence of the unit-cell volume is analyzed using zero-pressure equation-of-state which yielded the Debye temperature of the WSe2 to be 160 K. Following the temperature dependence of the W-Se and W-W bond distances, a nonlinear behavior is observed in the former in contrast to a rather regular behavior of the later. This significant difference in the temperature dependence of the a and c lattice parameters can have consequences in the macroscopic physical properties of the system. A good correlation between the temperature dependence of the W-Se bond distance and Raman E2g1 mode has been observed.