Probing Permanent Dipole Moments and Removing Exciton Fine Structures in Single Perovskite Nanocrystals by an Electric Field

Perovskite Quantum Heterostructure Constructed by Halide Mixing between a Single CsPbI3 Nanocrystal and an Individual CsPbBr3 Microplate

Ion migration is significantly enhanced in lead-halide perovskites with a soft crystal lattice, which can promote the formation of a heterogeneous interface between two such materials with different halide-anion compositions. Here we have deposited a single CsPbI3 nanocrystal (NC) on top of an individual CsPbBr3 microplate to create a mixed-halide CsPbBrxI3-x (0 < x < 3) NC by means of the anion exchange process. The formation of a CsPbBrxI3-x/CsPbBr3 heterostructure is confirmed by the much-enlarged geometric volume of the CsPbBrxI3-x NC as compared to the original CsPbI3 one, as well as by its capability of receiving photogenerated excitons from the CsPbBr3 microplate with a larger bandgap energy. The quantum nature of this heterostructure is reflected from single-photon emission of the composing CsPbBrxI3-x NC, which can also be bulk-like during phase segregation to demonstrate a red shift in the photoluminescence peak that is opposite to the common trend observed in smaller-sized mixed-halide NCs.

Complete Suppression of Phase Segregation in Mixed-Halide Perovskite Nanocrystals under Periodic Heating

Under continuous light illumination, it is known that localized domains with segregated halide compositions form in semiconducting mixed-halide perovskites, thus severely limiting their optoelectronic applications due to the negative changes in bandgap energies and charge-carrier characteristics. Here mixed-halide perovskite CsPbBr1.2 I1.8 nanocrystals are deposited onto an indium tin oxide substrate, whose temperature can be rapidly changed by ≈10 °C in a few seconds by applying or removing an external voltage. Such a sudden temperature change induces a temporary transition of CsPbBr1.2 I1.8 nanocrystals from the segregated phase to the mixed phase, the latter of which can be permanently maintained when the light illumination is coupled with periodic heating cycles. These findings mark the emergence of a practical solution to the detrimental phase-segregation problem, given that a small temperature modulation is readily available in various fundamental studies and practical devices of mixed-halide perovskites.

Zero-field quantum beats and spin decoherence mechanisms in CsPbBr3 perovskite nanocrystals

Coherent optical manipulation of exciton states provides a fascinating approach for quantum gating and ultrafast switching. However, their coherence time for incumbent semiconductors is highly susceptible to thermal decoherence and inhomogeneous broadening effects. Here, we uncover zero-field exciton quantum beating and anomalous temperature dependence of the exciton spin lifetimes in CsPbBr₃ perovskite nanocrystals (NCs) ensembles. The quantum beating between two exciton fine-structure splitting (FSS) levels enables coherent ultrafast optical control of the excitonic degree of freedom. From the anomalous temperature dependence, we identify and fully parametrize all the regimes of exciton spin depolarization, finding that approaching room temperature, it is dominated by a motional narrowing process governed by the exciton multilevel coherence. Importantly, our results present an unambiguous full physical picture of the complex interplay of the underlying spin decoherence mechanisms. These intrinsic exciton FSS states in perovskite NCs present fresh opportunities for spin-based photonic quantum technologies.

Electrical control of biexciton Auger recombination in single CdSe/CdS nanocrystals

The Auger recombination effect is strongly enhanced in semiconductor nanocrystals due to the quantum confinement, and various strategies in chemical synthesis have been employed so far to suppress this nonradiative decay pathway of multiple excitons. Here we apply external electric fields on single CdSe/CdS giant nanocrystals at room temperature, showing that the biexciton Auger and single-exciton radiative rates can be averagely decreased by ∼40 and ∼10%, respectively. In addition to a reduced overlap of the electron-hole wavefunctions, the large decrease of biexciton Auger rate could be contributed by the enhanced exciton-exciton repulsion, while the electron-hole exchange interaction might be weakened to cause the relatively small decrease of the single-exciton radiative rate. The above findings have thus proved that the external electric field can serve as a post-synthetic knob to tune the exciton recombination dynamics in semiconductor nanocrystals towards their efficient applications in various optoelectronic devices.