Coexistence of Photoelectric Conversion and Storage in van der Waals Heterojunctions

Interlayer electronic coupling regulates the performance of FeN MXenes and Fe2B2 MBenes as high-performance Li- and Al-ion batteries

When two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can induce excellent properties in energy storage materials. Here, we investigate the interlayer coupling of the FeN/Fe2B2 heterojunction as an anode material, which is constructed using vertically planar FeN and puckered Fe2B2 nanosheets. These structures were searched by the CALYPSO method and computed by density functional theory calculations. The stabilities of the FeN monolayer, Fe2B2 monolayer, and FeN/Fe2B2 heterojunction were tested in terms of dynamics, mechanics, and thermodynamics, respectively. These structures have good performances as anode materials, including the capacities of the FeN (Fe2B2) monolayer of 9207 mA h g-1 (2713 mA h g-1) and 3069 mA h g-1 (1005 mA h g-1) for Al and Li, respectively. The stable FeN/Fe2B2 heterojunction shows extremely low diffusion barriers of 0.01 eV, a high Al ion capacity of 4254 mA h g-1, and relatively low voltages. Hess's law revealed that the interlayer electronic coupling impacts the adsorption process of the FeN layer in the FeN/Fe2B2 heterojunction, which decreases the pz orbital of the N atom for the heterojunction. The unequal distribution of electrons between the layers results in interlayer polarization; the value of interlayer polarization was quantitatively calculated to be 0.64 pC m-1. The presence of adsorbed Li and Al atoms between the layers helps maintain the original structure and prevents the interlayer sliding from damaging the heterojunction. These findings offer insights for understanding the structural and electronic properties of the FeN/Fe2B2 heterojunction, which provides crucial information for rational design and advanced synthesis of novel electrode materials.

Parallel perception of visual motion using light-tunable memory matrix

Parallel perception of visual motion is of crucial significance to the development of an intelligent machine vision system. However, implementing in-sensor parallel visual motion perception using conventional complementary metal-oxide semiconductor technology is challenging, because the temporal and spatial information embedded in motion cannot be simultaneously encoded and perceived at the sensory level. Here, we demonstrate the parallel perception of diverse motion modes at the sensor level by exploiting light-tunable memory matrix in a van der Waals (vdW) heterostructure array. The optoelectronic characteristics of gate-tunable photoconductivity and light-tunable memory matrix enable devices in the array to realize simultaneous encoding and processing of incoming spatiotemporal light pattern. Furthermore, we implement a visual motion perceptron with the array capable of deciphering multiple motion parameters in parallel, including direction, velocity, acceleration, and angular velocity. Our work opens up a promising venue for the realization of an intelligent machine vision system based on in-sensor motion perception.

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric p-n Heterojunctions

The switchable electric polarization is usually achieved in ferroelectric materials with noncentrosymmetric structures, which opens exciting opportunities for information storage and neuromorphic computing. In another polar system of p-n junction, there exists the electric polarization at the interface due to the Fermi level misalignment. However, the resultant built-in electric field is unavailable to manipulate, thus attracting less attention for memory devices. Here, we report the interfacial polarization hysteresis (IPH) in the vertical sidewall van der Waals heterojunctions of black phosphorus and quasi-two-dimensional electron gas on SrTiO_{3}. A nonvolatile switching of electric polarization can be achieved by reconstructing the space charge region (SCR) with long-lifetime nonequilibrium carriers. The resulting electric-field controllable IPH is experimentally verified by electric hysteresis, polarization oscillation, and pyroelectric effect. Further studies confirm the transition temperature of 340 K, beyond which the IPH vanishes. The second transition is revealed with the temperature dropping below 230 K, corresponding to the sharp improvement of IPH and the freezing of SCR reconstruction. This work offers new possibilities for exploring the memory phenomena in nonferroelectric p-n heterojunctions.

Giant bipolar unidirectional photomagnetoresistance

Positive magnetoresistance (PMR) and negative magnetoresistance (NMR) describe two opposite responses of resistance induced by a magnetic field. Materials with giant PMR are usually distinct from those with giant NMR due to different physical natures. Here, we report the unusual photomagnetoresistance in the van der Waals heterojunctions of WSe₂/quasi-two-dimensional electron gas, showing the coexistence of giant PMR and giant NMR. The PMR and NMR reach 1,007.5% at -9 T and -93.5% at 2.2 T in a single device, respectively. The magnetoresistance spans over two orders of magnitude on inversion of field direction, implying a giant unidirectional magnetoresistance (UMR). By adjusting the thickness of the WSe₂ layer, we achieve the maxima of PMR and NMR, which are 4,900,000% and -99.8%, respectively. The unique magnetooptical transport shows the unity of giant UMR, PMR, and NMR, referred to as giant bipolar unidirectional photomagnetoresistance. These features originate from strong out-of-plane spin splitting, magnetic field-enhanced recombination of photocarriers, and the Zeeman effect through our experimental and theoretical investigations. This work offers directions for high-performance light-tunable spintronic devices.NMR).

Slow-Relaxation Behavior of a Mononuclear Co(II) Complex Featuring Long Axial Co-O Bond

Co(II) mononuclear complex with different coordination geometry would display various of field-induced single-ion magnet (SIM) behaviors. Here, we identify a field-induced single-ion magnet in a mononuclear complex Co(H₂DPA)₂·H₂O (H₂DPA = 2,6-pyridine-dicarboxylic acid) by the hydrothermal method. The long axial Co-O coordination bond (Co1‧‧‧O3) can be formed by Co1 and O3. Therefore, Co(II) ion is six-coordinated in a distorted elongated octahedron. AC magnetization susceptibilities show that the effective energy barrier is up to 43.28 K. This is much larger than most mononuclear Co(II). The distorted elongated octahedron caused by the axial Co-O coordination bond is responsible for the high effective energy barrier. The distribution of electron density in Co1 and O3 atoms in the long axial bond would influence the magnetic relaxation process in turn. Our work deepens the relationship between the effective energy barrier and the weak change of ligand field by long axial bonds, which would facilitate constructing SIM with high energy temperature.