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Qian C, Troue M, Figueiredo J, Soubelet P, Villafañe V, Beierlein J, Klembt S, Stier AV, Höfling S, Holleitner AW, Finley JJ. Lasing of moiré trapped MoSe 2/WSe 2 interlayer excitons coupled to a nanocavity. SCIENCE ADVANCES 2024; 10:eadk6359. [PMID: 38198542 PMCID: PMC10780878 DOI: 10.1126/sciadv.adk6359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 12/11/2023] [Indexed: 01/12/2024]
Abstract
We report lasing of moiré trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe2/WSe2 heterobilayer into a high-Q (>104) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field and measure their dipolar coupling strength to be 78 ± 4 micro-electron volts, fully consistent with the 82 micro-electron volts predicted by theory. The emission from the cavity mode shows clear threshold-like behavior as the transition is tuned into resonance with the cavity. We observe a superlinear power dependence accompanied by a narrowing of the linewidth as the distinct features of lasing. The onset and prominence of these threshold-like behaviors are pronounced at resonance while weak off-resonance. Our results show that a lasing transition can be induced in interacting moiré IXs with macroscopic coherence extending over the length scale of the cavity mode. Such systems raise interesting perspectives for low-power switching and synaptic nanophotonic devices using two-dimensional materials.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mirco Troue
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany
| | - Johannes Figueiredo
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Johannes Beierlein
- Julius-Maximilians-Universität Würzburg, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg, Germany
| | - Sebastian Klembt
- Julius-Maximilians-Universität Würzburg, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg, Germany
| | - Andreas V. Stier
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Sven Höfling
- Julius-Maximilians-Universität Würzburg, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg, Germany
| | - Alexander W. Holleitner
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany
| | - Jonathan J. Finley
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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Ferrera M, Sharma A, Milekhin I, Pan Y, Convertino D, Pace S, Orlandini G, Peci E, Ramò L, Magnozzi M, Coletti C, Salvan G, Zahn DRT, Canepa M, Bisio F. Local dielectric function of hBN-encapsulated WS 2flakes grown by chemical vapor deposition. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:274001. [PMID: 36996840 DOI: 10.1088/1361-648x/acc918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 03/30/2023] [Indexed: 06/19/2023]
Abstract
Hexagonal boron nitride (hBN), sometimes referred to as white graphene, receives growing interest in the scientific community, especially when combined into van der Waals (vdW) homo- and heterostacks, in which novel and interesting phenomena may arise. hBN is also commonly used in combination with two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs). The realization of hBN-encapsulated TMDC homo- and heterostacks can indeed offer opportunities to investigate and compare TMDC excitonic properties in various stacking configurations. In this work, we investigate the optical response at the micrometric scale of mono- and homo-bilayer WS2grown by chemical vapor deposition and encapsulated between two single layers of hBN. Imaging spectroscopic ellipsometry is exploited to extract the local dielectric functions across one single WS2flake and detect the evolution of excitonic spectral features from monolayer to bilayer regions. Exciton energies undergo a redshift by passing from hBN-encapsulated single layer to homo-bilayer WS2, as also confirmed by photoluminescence spectra. Our results can provide a reference for the study of the dielectric properties of more complex systems where hBN is combined with other 2D vdW materials into heterostructures and are stimulating towards the investigation of the optical response of other technologically-relevant heterostacks.
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Affiliation(s)
- Marzia Ferrera
- OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy
- Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Apoorva Sharma
- Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
| | - Ilya Milekhin
- Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany
| | - Yang Pan
- Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany
| | - Domenica Convertino
- Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Simona Pace
- Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Giorgio Orlandini
- Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Ermes Peci
- OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy
| | - Lorenzo Ramò
- OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy
| | - Michele Magnozzi
- OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy
- INFN, Sezione di Genova, via Dodecaneso 33, 16146 Genova, Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Georgeta Salvan
- Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
| | - Dietrich R T Zahn
- Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany
| | - Maurizio Canepa
- OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy
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Qian C, Villafañe V, Petrić MM, Soubelet P, Stier AV, Finley JJ. Coupling of MoS_{2} Excitons with Lattice Phonons and Cavity Vibrational Phonons in Hybrid Nanobeam Cavities. PHYSICAL REVIEW LETTERS 2023; 130:126901. [PMID: 37027879 DOI: 10.1103/physrevlett.130.126901] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2022] [Revised: 01/23/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
We report resonant Raman spectroscopy of neutral excitons X^{0} and intravalley trions X^{-} in hBN-encapsulated MoS_{2} monolayer embedded in a nanobeam cavity. By temperature tuning the detuning between Raman modes of MoS_{2} lattice phonons and X^{0}/X^{-} emission peaks, we probe the mutual coupling of excitons, lattice phonons and cavity vibrational phonons. We observe an enhancement of X^{0}-induced Raman scattering and a suppression for X^{-}-induced, and explain our findings as arising from the tripartite exciton-phonon-phonon coupling. The cavity vibrational phonons provide intermediate replica states of X^{0} for resonance conditions in the scattering of lattice phonons, thus enhancing the Raman intensity. In contrast, the tripartite coupling involving X^{-} is found to be much weaker, an observation explained by the geometry-dependent polarity of the electron and hole deformation potentials. Our results indicate that phononic hybridization between lattice and nanomechanical modes plays a key role in the excitonic photophysics and light-matter interaction in 2D-material nanophotonic systems.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Marko M Petrić
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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Qian C, Villafañe V, Schalk M, Astakhov GV, Kentsch U, Helm M, Soubelet P, Wilson NP, Rizzato R, Mohr S, Holleitner AW, Bucher DB, Stier AV, Finley JJ. Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity-Enhanced Emission. NANO LETTERS 2022; 22:5137-5142. [PMID: 35758596 DOI: 10.1021/acs.nanolett.2c00739] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of the zero-phonon line (ZPL) of VB- has remained elusive. Here, we measure the room-temperature ZPL wavelength to be 773 ± 2 nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to VB-. Our observations are consistent with the spatial redistribution of VB- emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using VB- as cavity spin-photon interfaces.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Martin Schalk
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - G V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Nathan P Wilson
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Roberto Rizzato
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Stephan Mohr
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Dominik B Bucher
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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