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Sun F, Wu M, Ren J, Wang X, Yang H, Zhang X, Chen W, Zheng Y. Reversible Mechanical Switching of Ferroelastic Stripe Domains in Multiferroic Thin Films. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38865279 DOI: 10.1021/acsami.4c04405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
The application potential of ferroelectric thin films largely relies on the controllability of their domain structure. Among the various proposed strategies, mechanical switching is being considered as a potential alternative to replace electrical switching for control of the domain structure of ferroelectric thin films via, e.g., the flexoelectric effect. So far, studies on mechanical switching are confined to out-of-plane polarization switching in ferroelectric thin films, which are in pristine or prepoled single-domain states. In this work, we report reversible in-plane mechanical switching of the monoclinic phase (MC phase) stripe domains in BiFeO3 thin films can be realized by scanning tip force. Via controlling the fast scan direction of the scanning probe microscopy tip and the magnitude of the tip force, the effective trailing field induced by the local tip force can be rotated to consequently switch the net in-plane polarization of the two-variant stripe domain patterns by either 90° or 180°. Moreover, the monoclinic to rhombohedral (MC-R) phase transition occurs during mechanical switching with the distribution of R-phase domains dependent on the switching paths. These results extend our current understanding of the mechanical switching behavior in ferroelectric thin films and should be instructive for their future applications.
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Affiliation(s)
- Fei Sun
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Mengjun Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Jianhua Ren
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xintong Wang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyue Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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2
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Li K, Wang L, Wang Y, Guo Y, Lv S, He Y, Lin W, Min T, Hu S, Yang S, Xue D, Zheng A, Yang S, Ding X. Electric Field Switching of Magnon Spin Current in a Compensated Ferrimagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312137. [PMID: 38350009 DOI: 10.1002/adma.202312137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Revised: 01/25/2024] [Indexed: 02/15/2024]
Abstract
Manipulation of directional magnon propagation, known as magnon spin current, is essential for developing magnonic devices featuring nonvolatile functionalities and ultralow power consumption. Magnon spin current can usually be modulated by magnetic field or current-induced spin torques. However, these approaches may lead to energy dissipation due to Joule heating. Electric-field switching of magnon spin current without charge current is highly preferred but challenging to realize. By integrating magnonic and piezoelectric materials, the manipulation of the magnon spin current generated by the spin Seebeck effect in the ferrimagnetic insulator Gd3Fe5O12 (GdIG) film on a piezoelectric substrate is demonstrated. Reversible electric-field switching of magnon polarization without applied charge current is observed. Through strain-mediated magnetoelectric coupling, the electric field induces the magnetic compensation transition between two magnetic states of the GdIG, resulting in its magnetization reversal and the simultaneous switching of magnon spin current. This work establishes a prototype material platform that paves the way for developing magnon logic devices characterized by all electric field reading and writing and reveals the underlying physics principles of their functions.
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Affiliation(s)
- Kaili Li
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Lei Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Yu Wang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuanjun Guo
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shuping Lv
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuewei He
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Weiwei Lin
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Tai Min
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shaojie Hu
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Sen Yang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Dezhen Xue
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Aqun Zheng
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shuming Yang
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xiangdong Ding
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter and State Key Laboratory for Mechanical Behavior of Materials, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
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3
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Huang X, Chen X, Li Y, Mangeri J, Zhang H, Ramesh M, Taghinejad H, Meisenheimer P, Caretta L, Susarla S, Jain R, Klewe C, Wang T, Chen R, Hsu CH, Harris I, Husain S, Pan H, Yin J, Shafer P, Qiu Z, Rodrigues DR, Heinonen O, Vasudevan D, Íñiguez J, Schlom DG, Salahuddin S, Martin LW, Analytis JG, Ralph DC, Cheng R, Yao Z, Ramesh R. Manipulating chiral spin transport with ferroelectric polarization. NATURE MATERIALS 2024:10.1038/s41563-024-01854-8. [PMID: 38622325 DOI: 10.1038/s41563-024-01854-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 03/07/2024] [Indexed: 04/17/2024]
Abstract
A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin-torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO3, an all-oxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection and magnetoelectric control. Our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics.
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Affiliation(s)
- Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Yuhang Li
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, USA
| | - John Mangeri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Maya Ramesh
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | | | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sandhya Susarla
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA
| | - Rakshit Jain
- Department of Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Tianye Wang
- Department of Physics, University of California, Berkeley, CA, USA
| | - Rui Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Cheng-Hsiang Hsu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Isaac Harris
- Department of Physics, University of California, Berkeley, CA, USA
| | - Sajid Husain
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Hao Pan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Jia Yin
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ziqiang Qiu
- Department of Physics, University of California, Berkeley, CA, USA
| | - Davi R Rodrigues
- Department of Electrical Engineering, Politecnico di Bari, Bari, Italy
| | - Olle Heinonen
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Dilip Vasudevan
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - Sayeef Salahuddin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - James G Analytis
- Department of Physics, University of California, Berkeley, CA, USA
- CIFAR Quantum Materials, CIFAR, Toronto, Ontario, Canada
| | - Daniel C Ralph
- Department of Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Ran Cheng
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, USA
- Department of Physics and Astronomy, University of California, Riverside, CA, USA
| | - Zhi Yao
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
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4
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Meisenheimer P, Moore G, Zhou S, Zhang H, Huang X, Husain S, Chen X, Martin LW, Persson KA, Griffin S, Caretta L, Stevenson P, Ramesh R. Switching the spin cycloid in BiFeO 3 with an electric field. Nat Commun 2024; 15:2903. [PMID: 38575570 PMCID: PMC10995181 DOI: 10.1038/s41467-024-47232-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Accepted: 03/26/2024] [Indexed: 04/06/2024] Open
Abstract
Bismuth ferrite (BiFeO3) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic moments in BiFeO3 are arranged into a spin cycloid, resulting in unique magnetic properties which are tied to the ferroelectric order. Previous understanding of this coupling has relied on average, mesoscale measurements. Using nitrogen vacancy-based diamond magnetometry, we observe the magnetic spin cycloid structure of BiFeO3 in real space. This structure is magnetoelectrically coupled through symmetry to the ferroelectric polarization and this relationship is maintained through electric field switching. Through a combination of in-plane and out-of-plane electrical switching, coupled with ab initio studies, we have discovered that the epitaxy from the substrate imposes a magnetoelastic anisotropy on the spin cycloid, which establishes preferred cycloid propagation directions. The energy landscape of the cycloid is shaped by both the ferroelectric degree of freedom and strain-induced anisotropy, restricting the spin spiral propagation vector to changes to specific switching events.
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Affiliation(s)
- Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
| | - Guy Moore
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Shiyu Zhou
- Department of Physics, Brown University, Providence, RI, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sajid Husain
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics and Astronomy, Department of Materials Science and Nanoengineering, Rice Advanced Materials Institute, Rice University, Houston, TX, USA
- Department of Chemistry, Rice University, Houston, TX, USA
| | - Kristin A Persson
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Sinéad Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lucas Caretta
- School of Engineering, Brown University, Providence, RI, USA
| | - Paul Stevenson
- Department of Physics, Northeastern University, Boston, MA, USA.
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics and Astronomy, Department of Materials Science and Nanoengineering, Rice Advanced Materials Institute, Rice University, Houston, TX, USA
- Department of Physics, University of California, Berkeley, CA, USA
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5
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Butcher TA, Phillips NW, Chiu CC, Wei CC, Ho SZ, Chen YC, Fröjdh E, Baruffaldi F, Carulla M, Zhang J, Bergamaschi A, Vaz CAF, Kleibert A, Finizio S, Yang JC, Huang SW, Raabe J. Ptychographic Nanoscale Imaging of the Magnetoelectric Coupling in Freestanding BiFeO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2311157. [PMID: 38402421 DOI: 10.1002/adma.202311157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 12/23/2023] [Indexed: 02/26/2024]
Abstract
Understanding the magnetic and ferroelectric ordering of magnetoelectric multiferroic materials at the nanoscale necessitates a versatile imaging method with high spatial resolution. Here, soft X-ray ptychography is employed to simultaneously image the ferroelectric and antiferromagnetic domains in an 80 nm thin freestanding film of the room-temperature multiferroic BiFeO3 (BFO). The antiferromagnetic spin cycloid of period 64 nm is resolved by reconstructing the corresponding resonant elastic X-ray scattering in real space and visualized together with mosaic-like ferroelectric domains in a linear dichroic contrast image at the Fe L3 edge. The measurements reveal a near perfect coupling between the antiferromagnetic and ferroelectric ordering by which the propagation direction of the spin cycloid is locked orthogonally to the ferroelectric polarization. In addition, the study evinces both a preference for in-plane propagation of the spin cycloid and changes of the ferroelectric polarization by 71° between multiferroic domains in the epitaxial strain-free, freestanding BFO film. The results provide a direct visualization of the strong magnetoelectric coupling in BFO and of its fine multiferroic domain structure, emphasizing the potential of ptychographic imaging for the study of multiferroics and non-collinear magnetic materials with soft X-rays.
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Affiliation(s)
- Tim A Butcher
- Paul Scherrer Institut, Villigen PSI, 5232, Switzerland
| | | | - Chun-Chien Chiu
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Chia-Chun Wei
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Sheng-Zhu Ho
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Yi-Chun Chen
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Erik Fröjdh
- Paul Scherrer Institut, Villigen PSI, 5232, Switzerland
| | | | - Maria Carulla
- Paul Scherrer Institut, Villigen PSI, 5232, Switzerland
| | - Jiaguo Zhang
- Paul Scherrer Institut, Villigen PSI, 5232, Switzerland
| | | | | | | | | | - Jan-Chi Yang
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | | | - Jörg Raabe
- Paul Scherrer Institut, Villigen PSI, 5232, Switzerland
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6
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Husain S, Harris I, Gao G, Li X, Meisenheimer P, Shi C, Kavle P, Choi CH, Kim TY, Kang D, Behera P, Perrodin D, Guo H, M Tour J, Han Y, Martin LW, Yao Z, Ramesh R. Low-temperature grapho-epitaxial La-substituted BiFeO 3 on metallic perovskite. Nat Commun 2024; 15:479. [PMID: 38212317 PMCID: PMC10784590 DOI: 10.1038/s41467-024-44728-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 01/03/2024] [Indexed: 01/13/2024] Open
Abstract
Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3 thin films have typically been deposited at relatively high temperatures (650-800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.
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Affiliation(s)
- Sajid Husain
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
| | - Isaac Harris
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Xinyan Li
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Pravin Kavle
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Chi Hun Choi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Tae Yeon Kim
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Deokyoung Kang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Piush Behera
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Didier Perrodin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Hua Guo
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - James M Tour
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Lane W Martin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Zhi Yao
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
| | - Ramamoorthy Ramesh
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Department of Physics, University of California, Berkeley, CA, 94720, USA.
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA.
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7
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Wu M, Sun F, Wang X, Zhang X, Chen W, Zheng Y. Facile Control of Ferroelastic Domain Patterns in Multiferroic Thin Films by a Scanning Tip Bias. ACS APPLIED MATERIALS & INTERFACES 2023; 15:11983-11993. [PMID: 36808955 DOI: 10.1021/acsami.2c20106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
BiFeO3, known as the "holy grail of all multiferroics", provides an appealing platform for exploration of multifield coupling physics and design of functional devices. Many fantastic properties of BiFeO3 are regulated by its ferroelastic domain structure. However, a facile programable control on the ferroelastic domain structure in BiFeO3 remains challenging and our understanding on the existing control strategies is also far from complete. This work reports a facile control of ferroelastic domain patterns in BiFeO3 thin films under area scanning poling by exploiting the tip bias as the control parameter. Combining scanning probe microscopy experiments and simulations, we found that BiFeO3 thin films with pristine 71° rhombohedral-phase stripe domains exhibit at least four switching pathways solely by controlling the scanning tip bias. As a result, one can readily write mesoscopic topological defects into the films without the necessity to change the tip motion. The correlation between conductance of the scanned region and the switching pathway is further investigated. Our results extend the current understanding on the domain switching kinetics and the coupled electronic transport properties in BiFeO3 thin films. The facile voltage control of ferroelastic domains should facilitate the development of configurable electronic and spintronic devices.
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Affiliation(s)
- Mengjun Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Sun
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xintong Wang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyue Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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