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Torbatian Z, Novko D. Plasmon Excitations across the Charge-Density-Wave Transition in Single-Layer TiSe 2. J Phys Chem Lett 2024; 15:6045-6050. [PMID: 38819234 DOI: 10.1021/acs.jpclett.4c01034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
1T-TiSe2 is believed to possess a soft electronic mode, i.e., plasmon or exciton, that might be responsible for the exciton condensation and charge-density-wave (CDW) transition. Here, we explore collective electronic excitations in single-layer 1T-TiSe2 by using the ab initio electromagnetic linear response and unveil intricate scattering pathways of the two-dimensional (2D) plasmon mode near the CDW phase. We found the dominant role of plasmon-phonon scattering, which in combination with the CDW gap excitations leads to the anomalous temperature dependence of the plasmon line width across the CDW transition. Below the transition temperature TCDW a strong hybridization between the 2D plasmon and CDW excitations is obtained. These optical features are highly tunable due to temperature-dependent CDW-related modifications of electronic structure and electron-phonon coupling and make CDW-bearing systems potentially interesting for applications in optoelectronics and low-loss plasmonics.
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Affiliation(s)
- Zahra Torbatian
- School of Nano Science, Institute for Research in Fundamental Sciences (IPM), 19395-5531 Tehran, Iran
| | - Dino Novko
- Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia
- Donostia International Physics Center (DIPC), 20018 Donostia-San Sebastián, Spain
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Lei X, Wang P, Mi M, Zhang Y, Chen A, Cai L, Wang T, Huang R, Wang Y, Chen Y, Li FS. Band splitting and enhanced charge density wave modulation in Mn-implanted CsV 3Sb 5. NANOSCALE ADVANCES 2023; 5:2785-2793. [PMID: 37205292 PMCID: PMC10186988 DOI: 10.1039/d3na00216k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Accepted: 04/17/2023] [Indexed: 05/21/2023]
Abstract
Kagome metal CsV3Sb5 has attracted unprecedented attention due to the charge density wave (CDW), Z2 topological surface states and unconventional superconductivity. However, how the paramagnetic bulk CsV3Sb5 interacts with magnetic doping is rarely explored. Here we report a Mn-doped CsV3Sb5 single crystal successfully achieved by ion implantation, which exhibits obvious band splitting and enhanced CDW modulation via angle-resolved photoemission spectroscopy (ARPES). The band splitting is anisotropic and occurs in the entire Brillouin region. We observed a Dirac cone gap at the K point but it closed at 135 K ± 5 K, much higher than the bulk value of ∼94 K, suggesting enhanced CDW modulation. According to the facts of the transferred spectral weight to the Fermi level and weak antiferromagnetic order at low temperature, we ascribe the enhanced CDW to the polariton excitation and Kondo shielding effect. Our study not only offers a simple method to realize deep doping in bulk materials, but also provides an ideal platform to explore the coupling between exotic quantum states in CsV3Sb5.
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Affiliation(s)
- Xiaoxu Lei
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Pengdong Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Mengjuan Mi
- School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University Jinan 250100 China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices, Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Aixi Chen
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Liwu Cai
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
- Nano Science and Technology Institute, University of Science and Technology of China Suzhou 215123 China
| | - Ting Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Rong Huang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Yilin Wang
- School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University Jinan 250100 China
| | - Yiyao Chen
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
| | - Fang-Sen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 China
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