Predicting Phonon-Induced Spin Decoherence from First Principles: Colossal Spin Renormalization in Condensed Matter

Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons

The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of n-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.

Ab Initio Predictions of Spin Relaxation, Dephasing, and Diffusion in Solids

Spin relaxation, dephasing, and diffusion are at the heart of spin-based information technology. Accurate theoretical approaches to simulate spin lifetimes (τs), determining how fast the spin polarization and phase information will be lost, are important to the understanding of the underlying mechanism of these spin processes, and invaluable in searching for promising candidates of spintronic materials. Recently, we develop a first-principles real-time density-matrix (FPDM) approach to simulate spin dynamics for general solid-state systems. Through the complete first-principles descriptions of light-matter interaction and scattering processes including electron-phonon, electron-impurity, and electron-electron scatterings with self-consistent spin-orbit coupling, as well as ab initio Landé g-factor, our method can predict τs at various conditions as a function of carrier density and temperature, under electric and magnetic fields. By employing this method, we successfully reproduce experimental results of disparate materials and identify the key factors affecting spin relaxation, dephasing, and diffusion in different materials. Specifically, we predict that germanene has long τs (∼100 ns at 50 K), a giant spin lifetime anisotropy, and spin-valley locking effect under electric fields, making it advantageous for spin-valleytronic applications. Based on our theoretical derivations and ab initio simulations, we propose a new useful electronic quantity, named spin-flip angle θ↑↓, for the understanding of spin relaxation through intervalley spin-flip scattering processes. Our method can be further applied to other emerging materials and extended to simulate exciton spin dynamics and steady-state photocurrents due to photogalvanic effect.

Thermal dissipation of the quantum spin Hall edge states in HgTe/CdTe quantum well

Quantum spin Hall effect is characterized by topologically protected helical edge states. Here we study the thermal dissipation of helical edge states by considering two types of dissipation sources. The results show that the helical edge states are dissipationless for normal dissipation sources with or without Rashba spin-orbit coupling in the system, but they are dissipative for spin dissipation sources. Further studies on the energy distribution show that electrons with spin-up and spin-down are both in their own equilibrium without dissipation sources. Spin dissipation sources can couple the two subsystems together to induce voltage drop and non-equilibrium distribution, leading to thermal dissipation, while normal dissipation sources cannot. With the increase of thermal dissipation, the subsystems of electrons with spin-up and spin-down evolve from non-equilibrium finally to mutual equilibrium. In addition, the effects of disorder on thermal dissipation are also discussed. Our work provides clues to reduce thermal dissipation in the quantum spin Hall systems.