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Giorgi G, Van Schilfgaarde M, Korkin A, Yamashita K. On the Chemical Origin of the Gap Bowing in (GaAs)(1-x)Ge(2x) Alloys: A Combined DFT-QSGW Study. NANOSCALE RESEARCH LETTERS 2010; 5:469-477. [PMID: 20671794 PMCID: PMC2893788 DOI: 10.1007/s11671-009-9516-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/20/2009] [Accepted: 12/17/2009] [Indexed: 05/29/2023]
Abstract
Motivated by the research and analysis of new materials for photovoltaics and by the possibility of tailoring their optical properties for improved solar energy conversion, we have focused our attention on the (GaAs)(1-x)Ge(2x) series of alloys. We have investigated the structural properties of some (GaAs)(1-x)Ge(2x) compounds within the local-density approximation to density-functional theory, and their optical properties within the Quasiparticle Self-consistent GW approximation. The QSGW results confirm the experimental evidence of asymmetric bandgap bowing. It is explained in terms of violations of the octet rule, as well as in terms of the order-disorder phase transition.
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Affiliation(s)
- Giacomo Giorgi
- Department of Chemical System Engineering, School of Engineering, University of Tokyo, Tokyo, 113-8656, Japan
| | | | | | - Koichi Yamashita
- Department of Chemical System Engineering, School of Engineering, University of Tokyo, Tokyo, 113-8656, Japan
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Peressi M, Colombo L, Resta R, Baroni S, Baldereschi A. Structural and electronic properties of strained Si/GaAs heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:12047-12052. [PMID: 10007552 DOI: 10.1103/physrevb.48.12047] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lambrecht WR, Segall B. Anomalous band-gap behavior and phase stability of c-BN-diamond alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9289-9296. [PMID: 10004994 DOI: 10.1103/physrevb.47.9289] [Citation(s) in RCA: 40] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kramer B, Tomasch G, Greene JE, Salvati L, Barr TL, Ray MA. High-resolution (GaAs)1-x(Ge2)x x-ray photoelectron valence-band spectra: Implications for proposed electronic and structural models. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:1372-1376. [PMID: 10003778 DOI: 10.1103/physrevb.46.1372] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lastras-Martinez A, Rodriguez-Pedroza G, Mei DH, Kramer B, Lubben D, Greene JE. Optical-reflectance anisotropy in epitaxial metastable (GaAs)1-x(Si2)x(001) alloys: A probe for the zinc-blende-to-diamond structural transition. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:14035-14039. [PMID: 9997272 DOI: 10.1103/physrevb.43.14035] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Osório R, Froyen S, Zunger A. Structural phase transition in (GaAs)1-xGe2x and (GaP)1-xSi2x alloys: Test of the bulk thermodynamic description. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:14055-14072. [PMID: 9997275 DOI: 10.1103/physrevb.43.14055] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Peressi M, Baroni S, Resta R, Baldereschi A. Tuning band offsets at semiconductor interfaces by intralayer deposition. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:7347-7350. [PMID: 9998208 DOI: 10.1103/physrevb.43.7347] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bar-Yam Y, Kandel D, Domany E. Structure and phase transitions of grown and equilibrated alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:12869-12873. [PMID: 9993762 DOI: 10.1103/physrevb.41.12869] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Capaz RB, Preger GF, Koiller B. Growth-driven ordering and anisotropy in semiconductor alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:8299-8304. [PMID: 9991287 DOI: 10.1103/physrevb.40.8299] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Newman KE, Dow JD, Bunker BA, Abels LL, Raccah PM, Ugur S, Xue DZ, Kobayashi A. Effects of a zinc-blende-diamond order-disorder transition on the crystal, electronic, and vibrational structures of metastable (GaAs)1-x(Ge2)x alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:657-662. [PMID: 9947199 DOI: 10.1103/physrevb.39.657] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Preger GF, Chaves CM, Koiller B. Epitaxial growth of metastable semiconductor alloys: A novel simulation. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:13447-13450. [PMID: 9946335 DOI: 10.1103/physrevb.38.13447] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Davidovich MA, Koiller B, Osório R, Robbins MO. Electronic theory of ordering in (GaAs)1-xGe. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:10524-10532. [PMID: 9945907 DOI: 10.1103/physrevb.38.10524] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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McGlinn TC, Klein MV, Romano LT, Greene JE. Raman-scattering and electron-microscopy study of composition-dependent ordering in metastable (AIIIBV)1-x(CIII2)x alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:3362-3367. [PMID: 9946678 DOI: 10.1103/physrevb.38.3362] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Hass KC, Baird RJ. Breakdown of the virtual-crystal approximation in Ge2x(GaAs)1-x. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:3591-3594. [PMID: 9946718 DOI: 10.1103/physrevb.38.3591] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Romano LT, Robertson IM, Greene JE, Sundgren JE. Domain structure in epitaxial metastable zinc-blende (GaAs)1-x(Ge2)x(001) alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 36:7523-7528. [PMID: 9942520 DOI: 10.1103/physrevb.36.7523] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Gu BL, Newman KE, Fedders PA. Role of correlations in (GaSb)1-xGe2x alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:9135-9148. [PMID: 9941311 DOI: 10.1103/physrevb.35.9135] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Holloway H, Davis LC. Long-range order in (GaAs)1-xGe2x and (GaSb)1-xGe2x: Predictions for <111> growth. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:3823-3831. [PMID: 9941905 DOI: 10.1103/physrevb.35.3823] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Kahn AD, Eades JA, Romano LT, Shah SI, Greene JE. Ion-channeling studies of the structural phase transition in (GaSb)1-x(Ge2)x alloys. PHYSICAL REVIEW LETTERS 1987; 58:682-685. [PMID: 10035008 DOI: 10.1103/physrevlett.58.682] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Davis LC, Holloway H. Properties of (GaAs)1-xGe2x and (GaSb)1-xGe2x: Consequences of a stochastic growth process. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:2767-2780. [PMID: 9941754 DOI: 10.1103/physrevb.35.2767] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Kim K, Stern EA. Model for the metastable system of type (GaAs)1-x(Ge2)x. PHYSICAL REVIEW. B, CONDENSED MATTER 1985; 32:1019-1026. [PMID: 9937113 DOI: 10.1103/physrevb.32.1019] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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