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Islam S, Shamim S, Ghosh A. Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109671. [PMID: 35545231 DOI: 10.1002/adma.202109671] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Revised: 05/01/2022] [Indexed: 06/15/2023]
Abstract
As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum-enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in "noise" in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low-frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided.
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Affiliation(s)
- Saurav Islam
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
| | - Saquib Shamim
- Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
- Institute for Topological Insulators, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
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2
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Hsieh K, Kochat V, Biswas T, Tiwary CS, Mishra A, Ramalingam G, Jayaraman A, Chattopadhyay K, Raghavan S, Jain M, Ghosh A. Spontaneous Time-Reversal Symmetry Breaking at Individual Grain Boundaries in Graphene. PHYSICAL REVIEW LETTERS 2021; 126:206803. [PMID: 34110182 DOI: 10.1103/physrevlett.126.206803] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2020] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Graphene grain boundaries (GBs) have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuation measurements to experimentally demonstrate a spontaneous breaking of time-reversal symmetry across individual GBs of chemical vapor deposited graphene. While quantum transport across the GBs indicate spin-scattering-induced dephasing and hence formation of local magnetic moments, below T≲4 K we observe complete lifting of time-reversal symmetry at high carrier densities (n≳5×10^{12} cm^{-2}) and low temperature (T≲2 K). An unprecedented thirtyfold reduction in the universal conductance fluctuation magnitude with increasing doping density further supports the possibility of an emergent frozen magnetic state at the GBs. Our experimental results suggest that realistic GBs of graphene can be a promising resource for new electronic phases and spin-based applications.
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Affiliation(s)
- Kimberly Hsieh
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - Vidya Kochat
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - Tathagata Biswas
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - Chandra Sekhar Tiwary
- Department of Materials Engineering, Indian Institute of Science, Bangalore 560 012, India
| | - Abhishek Mishra
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560 012, India
| | | | - Aditya Jayaraman
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - Kamanio Chattopadhyay
- Department of Materials Engineering, Indian Institute of Science, Bangalore 560 012, India
| | - Srinivasan Raghavan
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560 012, India
- Materials Research Center, Indian Institute of Science, Bangalore 560 012, India
| | - Manish Jain
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560 012, India
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Shamim S, Mahapatra S, Scappucci G, Klesse WM, Simmons MY, Ghosh A. Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers. Sci Rep 2017; 7:46670. [PMID: 28470166 PMCID: PMC5415765 DOI: 10.1038/srep46670] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2017] [Accepted: 03/22/2017] [Indexed: 11/09/2022] Open
Abstract
We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 1018 m−2) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.
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Affiliation(s)
- Saquib Shamim
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - S Mahapatra
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052, Australia
| | - G Scappucci
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052, Australia
| | - W M Klesse
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052, Australia
| | - M Y Simmons
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052, Australia
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
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4
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Nonequilibrium fluctuations as a distinctive feature of weak localization. Sci Rep 2015; 5:10705. [PMID: 26024506 PMCID: PMC4448654 DOI: 10.1038/srep10705] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/30/2014] [Accepted: 04/22/2015] [Indexed: 11/24/2022] Open
Abstract
Two-dimensional materials, such as graphene, topological insulators, and
two-dimensional electron gases, represent a technological playground to develop
coherent electronics. In these systems, quantum interference effects, and in
particular weak localization, are likely to occur. These coherence effects are
usually characterized by well-defined features in dc electrical transport, such as a
resistivity increase and negative magnetoresistance below a crossover temperature.
Recently, it has been shown that in magnetic and superconducting compounds,
undergoing a weak-localization transition, a specific low-frequency 1/f noise
occurs. An interpretation in terms of nonequilibrium universal conductance
fluctuations has been given. The universality of this unusual electric noise
mechanism has been here verified by detailed voltage-spectral density investigations
on ultrathin copper films. The reported experimental results validate the proposed
theoretical framework, and also provide an alternative methodology to detect
weak-localization effects by using electric noise spectroscopy.
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Rahman A, Guikema JW, Marković N. Quantum noise and asymmetric scattering of electrons and holes in graphene. NANO LETTERS 2014; 14:6621-6625. [PMID: 25343536 DOI: 10.1021/nl503276s] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We present measurements of quantum interference noise in double-gated single layer graphene devices at low temperatures. The noise characteristics show a nonmonotonic dependence on carrier density, which is related to the interplay between charge inhomogeneity and different scattering mechanisms. Linearly increasing 1/f noise at low carrier densities coincides with the observation of weak localization, suggesting the importance of short-range disorder in this regime. Using perpendicular and parallel p-n junctions, we find that the observed asymmetry of the noise with respect to the Dirac point can be related to asymmetric scattering of electrons and holes on the disorder potential.
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Affiliation(s)
- Atikur Rahman
- Department of Physics and Astronomy, Johns Hopkins University , Baltimore, Maryland 21218, United States
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Shamim S, Mahapatra S, Scappucci G, Klesse WM, Simmons MY, Ghosh A. Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium. PHYSICAL REVIEW LETTERS 2014; 112:236602. [PMID: 24972220 DOI: 10.1103/physrevlett.112.236602] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2014] [Indexed: 06/03/2023]
Abstract
We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.
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Affiliation(s)
- S Shamim
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - S Mahapatra
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - G Scappucci
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - W M Klesse
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - M Y Simmons
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - A Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
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Lin YH, Wang LY, Lin JJ. Time-dependent universal conductance fluctuations in IrO2 nanowires. NANOSCALE RESEARCH LETTERS 2012; 7:673. [PMID: 23237379 PMCID: PMC3582475 DOI: 10.1186/1556-276x-7-673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2012] [Accepted: 12/04/2012] [Indexed: 06/01/2023]
Abstract
: Single-crystalline iridium dioxide nanowires show the time-dependent universal conductance fluctuations (TUCFs) at cryogenic temperatures. The conductance fluctuations persist up to temperature T as high as nearly 10 K. The root-mean-square TUCF magnitudes increase with decreasing T, reaching approximately 0.1 e2 / h at 1.7 K. We ascribe these conductance fluctuations to originating from the conduction electrons scattering upon mobile defects (moving scattering centers). Our measured TUCF characteristics are satisfactorily explained in terms of the existing TUCF theory in its three-dimensional form. The extracted electron dephasing length Lφ(1.7 K) ≃90 nm is smaller than the diameter (≈ 180 nm) of our nanowires.
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Affiliation(s)
- Yong-Han Lin
- Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Lu-Yao Wang
- Department of Physics, Fu Jen Catholic University, Hsinchuang 24205, Taiwan
| | - Juhn-Jong Lin
- Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
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8
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Pal AN, Kochat V, Ghosh A. Direct observation of valley hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations. PHYSICAL REVIEW LETTERS 2012; 109:196601. [PMID: 23215411 DOI: 10.1103/physrevlett.109.196601] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2012] [Revised: 05/28/2012] [Indexed: 06/01/2023]
Abstract
In graphene, the valleys represent spinlike quantities and can act as a physical resource in valley-based electronics to produce novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of 4 when valley triplet states are gapped in the presence of short-range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry class that outlines a fundamental feature arising from graphene's unique crystal structure.
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Affiliation(s)
- Atindra Nath Pal
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India.
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9
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Bode N, Mariani E, von Oppen F. Transport properties of graphene functionalized with molecular switches. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:394017. [PMID: 22964645 DOI: 10.1088/0953-8984/24/39/394017] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We provide a theory of the electronic transport properties of a graphene layer functionalized with molecular switches. Our considerations are motivated by the spiropyran-merocyanine system which is non-polar in its ring-closed spiropyran form and zwitterionic in its ring-open merocyanine form. The reversible switching between these two isomers affects the carriers in graphene through the associated change in the molecular dipole moment, turning the graphene layer into a sensor of the molecular switching state. We present results for both the quasiclassical (Boltzmann) and the quantum coherent regimes of transport. Quite generally, we find a linear sensitivity of the conductance on the molecular dipole moment whenever quantum interference effects play an essential role which contrasts with a quadratic (and typically weaker) dependence when quantum interference is absent.
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Affiliation(s)
- Niels Bode
- Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, D-14195 Berlin, Germany
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10
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Rossi E, Bardarson JH, Fuhrer MS, Das Sarma S. Universal conductance fluctuations in Dirac materials in the presence of long-range disorder. PHYSICAL REVIEW LETTERS 2012; 109:096801. [PMID: 23002869 DOI: 10.1103/physrevlett.109.096801] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2011] [Indexed: 06/01/2023]
Abstract
We study quantum transport in Dirac materials with a single fermionic Dirac cone (strong topological insulators and graphene in the absence of intervalley coupling) in the presence of non-Gaussian long-range disorder. We show, by directly calculating numerically the conductance fluctuations, that in the limit of very large system size and disorder strength, quantum transport becomes universal. However, a systematic deviation away from universality is obtained for realistic system parameters. By comparing our results to existing experimental data on 1/f noise, we suggest that many of the graphene samples studied to date are in a nonuniversal crossover regime of conductance fluctuations.
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Affiliation(s)
- E Rossi
- Department of Physics, College of William and Mary, Williamsburg, Virginia 23187, USA
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11
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See AM, Pilgrim I, Scannell BC, Montgomery RD, Klochan O, Burke AM, Aagesen M, Lindelof PE, Farrer I, Ritchie DA, Taylor RP, Hamilton AR, Micolich AP. Impact of small-angle scattering on ballistic transport in quantum dots. PHYSICAL REVIEW LETTERS 2012; 108:196807. [PMID: 23003076 DOI: 10.1103/physrevlett.108.196807] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2011] [Revised: 03/08/2012] [Indexed: 06/01/2023]
Abstract
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential and that, by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for "ballistic" transport in quantum dots.
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Affiliation(s)
- A M See
- School of Physics, University of New South Wales, Sydney NSW 2052, Australia
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12
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Borunda MF, Berezovsky J, Westervelt RM, Heller EJ. Imaging universal conductance fluctuations in graphene. ACS NANO 2011; 5:3622-3627. [PMID: 21466198 DOI: 10.1021/nn103450d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
We study conductance fluctuations (CF) and the sensitivity of the conductance to the motion of a single scatterer in two-dimensional massless Dirac systems. Our extensive numerical study finds limits to the predicted universal value of CF. We find that CF are suppressed for ballistic systems near the Dirac point and approach the universal value at sufficiently strong disorder. The conductance of massless Dirac fermions is sensitive to the motion of a single scatterer. CF of order e(2)/h result from the motion of a single impurity by a distance comparable to the Fermi wavelength. This result applies to graphene systems with a broad range of impurity strength and concentration while the dependence on the Fermi wavelength can be explored via gate voltages. Our prediction can be tested by comparing graphene samples with varying amounts of disorder and can be used to understand interference effects in mesoscopic graphene devices.
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Affiliation(s)
- Mario F Borunda
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
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13
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Berezovsky J, Borunda MF, Heller EJ, Westervelt RM. Imaging coherent transport in graphene. Part I: mapping universal conductance fluctuations. NANOTECHNOLOGY 2010; 21:274013. [PMID: 20571200 DOI: 10.1088/0957-4484/21/27/274013] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Graphene provides a fascinating testbed for new physics and exciting opportunities for future applications based on quantum phenomena. To understand the coherent flow of electrons through a graphene device, we employ a nanoscale probe that can access the relevant length scales--the tip of a liquid-He-cooled scanning probe microscope (SPM) capacitively couples to the graphene device below, creating a movable scatterer for electron waves. At sufficiently low temperatures and small size scales, the diffusive transport of electrons through graphene becomes coherent, leading to universal conductance fluctuations (UCF). By scanning the tip over a device, we map these conductance fluctuations versus scatterer position. We find that the conductance is highly sensitive to the tip position, producing delta G approximately e(2)/h fluctuations when the tip is displaced by a distance comparable to half the Fermi wavelength. These measurements are in good agreement with detailed quantum simulations of the imaging experiment and demonstrate the value of a cooled SPM for probing coherent transport in graphene.
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Affiliation(s)
- J Berezovsky
- School of Engineering and Applied Science, and Department of Physics, Harvard University, Cambridge, MA 02138, USA
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Berezovsky J, Westervelt RM. Imaging coherent transport in graphene. Part II: probing weak localization. NANOTECHNOLOGY 2010; 21:274014. [PMID: 20571201 DOI: 10.1088/0957-4484/21/27/274014] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron waves traveling along different paths interfere, changing the total conductance. Weak localization is produced by the coherent backscattering of waves, while universal conductance fluctuations are created by summing over all paths. In this work, we obtain conductance images of weak localization with a liquid-He-cooled scanning probe microscope, by using the tip to create a movable scatterer in a graphene device. This technique allows us to investigate coherent transport with a probe of size comparable to the electron wavelength. Images of magnetoconductance versus tip position map the effects of disorder by moving a single scatterer, revealing how electron interference is modified by the tip perturbation. The weak localization dip in conductivity at B = 0 is obtained by averaging magnetoconductance traces at different positions of the tip-created scatterer. The width Delta B(WL) of the dip yields an estimate of the electron coherence length L(phi) at fixed charge density. This 'scanning scatterer' method provides a new way of investigating coherent transport in graphene by directly perturbing the disorder configuration that creates these interferometric effects.
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Affiliation(s)
- Jesse Berezovsky
- School of Engineering and Applied Science, and Department of Physics, Harvard University, Cambridge, MA 02138, USA
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15
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Shnirman A, Schön G, Martin I, Makhlin Y. Low- and high-frequency noise from coherent two-level systems. PHYSICAL REVIEW LETTERS 2005; 94:127002. [PMID: 15903951 DOI: 10.1103/physrevlett.94.127002] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2005] [Indexed: 05/02/2023]
Abstract
Recent experiments indicate a connection between the low- and high-frequency noises affecting superconducting quantum systems. We explore the possibilities that both noises can be produced by one ensemble of microscopic modes, made up, e.g., by sufficiently coherent two-level systems (TLS's). This implies a relation between the noise power in different frequency domains, which depends on the distribution of the parameters of the TLS's. We show that a distribution, natural for tunneling TLS's, with a log-uniform distribution in the tunnel splitting and linear distribution in the bias, accounts for experimental observations.
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Affiliation(s)
- Alexander Shnirman
- Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-76128 Karlsruhe, Germany
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16
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Course 5 Noise in mesoscopic physics. NANOPHYSICS: COHERENCE AND TRANSPORT, ÉCOLE D'ÉTÉ DE PHYSIQUE DES HOUCHES SESSION LXXXI 2005. [DOI: 10.1016/s0924-8099(05)80047-2] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
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17
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18
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Leturcq R, L'Hôte D, Tourbot R, Mellor CJ, Henini M. Resistance noise scaling in a dilute two-dimensional hole system in GaAs. PHYSICAL REVIEW LETTERS 2003; 90:076402. [PMID: 12633254 DOI: 10.1103/physrevlett.90.076402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2002] [Indexed: 05/24/2023]
Abstract
We have measured the resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power S(R)/R(2) increases strongly when the hole density p(s) is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p(s). The noise scales with the resistance, S(R)/R(2) approximately R2.4, as for a second order phase transition such as a percolation transition. The p(s) dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p(*) which is lower than the observed MIT critical density p(c).
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Affiliation(s)
- R Leturcq
- Service de Physique de l'Etat Condensé, CEA/DSM, CE Saclay, F-91191 Gif-sur-Yvette, France
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19
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Cerruti NR, Tomsovic S. Sensitivity of wave field evolution and manifold stability in chaotic systems. PHYSICAL REVIEW LETTERS 2002; 88:054103. [PMID: 11863728 DOI: 10.1103/physrevlett.88.054103] [Citation(s) in RCA: 90] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2001] [Indexed: 05/23/2023]
Abstract
The sensitivity of a wave field's evolution to small perturbations is of fundamental interest. For chaotic systems, there are two distinct regimes of either exponential or Gaussian overlap decay in time. We develop a semiclassical approach for understanding both regimes and give a simple expression for the crossover time between the regimes. The wave field's evolution is considerably more stable than the exponential instability of chaotic trajectories seems to suggest. The resolution of this paradox lies in the collective behavior of the appropriate set of trajectories. Results are given for the standard map.
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Affiliation(s)
- Nicholas R Cerruti
- Department of Physics, Washington State University, Pullman, Washington 99164-2814, USA
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20
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Sautet P, Joachim C. The switching ability of a three-level tight-binding system: the isolated and embedded case. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/21/21/016] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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21
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Ghosh A, Raychaudhuri AK. Universal conductance fluctuations in three dimensional metallic single crystals of Si. PHYSICAL REVIEW LETTERS 2000; 84:4681-4684. [PMID: 10990770 DOI: 10.1103/physrevlett.84.4681] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/1999] [Indexed: 05/23/2023]
Abstract
In this paper we report the measurement of conductance fluctuations in 3D crystals of Si made metallic by heavy doping. ( L/L(straight phi) approximately 10(3), where L(straight phi) is the phase coherence length.) Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations as a predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of L(3)(straight phi) were found to be saturated at <(deltaG(straight phi))(2)> approximately (e(2)/h)(2). An accurate knowledge of the level of disorder enables us to calculate the change in conductance deltaG1 due to movement of a single scatterer as <(deltaG1)(2)> approximately (e(2)/h)(2), which is approximately 2 orders of magnitude higher than its theoretically expected value in 3D systems.
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Affiliation(s)
- A Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
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22
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Spivak B, Zyuzin A. Mesoscopic sensitivity of speckles in disordered nonlinear media to changes of the scattering potential. PHYSICAL REVIEW LETTERS 2000; 84:1970-1973. [PMID: 11017673 DOI: 10.1103/physrevlett.84.1970] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/1999] [Indexed: 05/23/2023]
Abstract
We show that the sensitivity of wave speckle patterns in disordered nonlinear media to changes of scattering potential increases with sample size. For large sizes the sensitivity diverges, which implies that for a given coherent wave incident on a sample there are multiple solutions for the spatial distribution of the wave density. The number of solutions increases exponentially with the sample size.
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Affiliation(s)
- B Spivak
- Physics Department, University of Washington, Seattle, Washington 98195, USA
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Chun K, Birge NO. Dissipative quantum tunneling of a single defect in a disordered metal. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:4629-4637. [PMID: 9986421 DOI: 10.1103/physrevb.54.4629] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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24
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Moon JS, Birge NO, Golding B. Observation of Zeeman splitting in universal conductance fluctuations. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:R4193-R4196. [PMID: 9984067 DOI: 10.1103/physrevb.53.r4193] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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25
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Cobden DH, Muzykantskii BA. Finite-Temperature Fermi-Edge Singularity in Tunneling Studied Using Random Telegraph Signals. PHYSICAL REVIEW LETTERS 1995; 75:4274-4277. [PMID: 10059863 DOI: 10.1103/physrevlett.75.4274] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Fal'ko VI. Conductance fluctuations due to a bistable scatterer in a weakly connected conductor. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:5227-5232. [PMID: 9979399 DOI: 10.1103/physrevb.51.5227] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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27
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Cohen O, Ovadyahu Z. Resistance noise near the Anderson transition. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:10442-10449. [PMID: 9975141 DOI: 10.1103/physrevb.50.10442] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Béal-Monod MT. Conductance fluctuations in mesoscopic disordered systems for arbitrary scattering potentials. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:4275-4282. [PMID: 9976725 DOI: 10.1103/physrevb.50.4275] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Long NJ, Yin S, Echternach PM, Bergmann G. Photon-induced universal conductance fluctuations in mesoscopic Au films. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2693-2695. [PMID: 9976500 DOI: 10.1103/physrevb.50.2693] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Macêdo AM. Intensity correlations in electronic-wave propagation in a disordered medium: The influence of spin-orbit scattering. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:11736-11741. [PMID: 10010039 DOI: 10.1103/physrevb.49.11736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bergmann G. Different coherence lengths in universal conductance fluctuations: A numerical calculation for the quasi-two-dimensional case. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:8377-8384. [PMID: 10009606 DOI: 10.1103/physrevb.49.8377] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Chun K, Birge NO. Single-defect thermometer as a probe of electron heating in Bi. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2959-2962. [PMID: 10011141 DOI: 10.1103/physrevb.49.2959] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Yin S, Long NJ, Bergmann G. Atomic dynamics in quench-condensed films measured by universal conductance fluctuations. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2801-2804. [PMID: 10011113 DOI: 10.1103/physrevb.49.2801] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Faas M, Altshuler BL. Magnetic-field dependence of defect tunneling in a mesoscopic metal. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:18043-18050. [PMID: 10008443 DOI: 10.1103/physrevb.48.18043] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chun K, Birge NO. Dissipative quantum tunneling of a single defect in Bi. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:11500-11503. [PMID: 10007483 DOI: 10.1103/physrevb.48.11500] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Feng S, Pichard JL, Zeng F. Conductance fluctuations due to motion of a single impurity in the localized regime. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:2529-2534. [PMID: 10008646 DOI: 10.1103/physrevb.48.2529] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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McConville P, Birge NO. Weak localization, universal conductance fluctuations, and 1/f noise in Ag. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:16667-16670. [PMID: 10006118 DOI: 10.1103/physrevb.47.16667] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Riedel EK. Mesoscopic persistent current in small rings. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:15449-15459. [PMID: 10005933 DOI: 10.1103/physrevb.47.15449] [Citation(s) in RCA: 29] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ralls KS, Ralph DC, Buhrman RA. Impact of a single defect on the conductance: Local interference and universal conductance fluctuations. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:10509-10514. [PMID: 10005163 DOI: 10.1103/physrevb.47.10509] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cohen O, Ovadyahu Z, Rokni M. 1/f noise and incipient localization. PHYSICAL REVIEW LETTERS 1992; 69:3555-3558. [PMID: 10046851 DOI: 10.1103/physrevlett.69.3555] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Han KH, Joo MK, Shin HJ, Lee SI. Measurements of noise spectral densities for a high-Tc superconductor: Single-crystal Bi2Sr2CaCu2Ox. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:11835-11839. [PMID: 10003079 DOI: 10.1103/physrevb.46.11835] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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White JA, Velasco S. Quantum fractal noise: Time-autocorrelation functions. PHYSICAL REVIEW. A, ATOMIC, MOLECULAR, AND OPTICAL PHYSICS 1992; 46:1880-1885. [PMID: 9908325 DOI: 10.1103/physreva.46.1880] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
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Nonlinear conductance fluctuations in quantum wires: Appearance of two different energy scales. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:14189-14196. [PMID: 10001543 DOI: 10.1103/physrevb.45.14189] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Golding B, Zimmerman MN, Coppersmith SN. Dissipative quantum tunneling of a single microscopic defect in a mesoscopic metal. PHYSICAL REVIEW LETTERS 1992; 68:998-1001. [PMID: 10046052 DOI: 10.1103/physrevlett.68.998] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Béal-Monod MT, Forgacs G. Impurity interactions in disordered metals. II. Conductance fluctuations in mesoscopic systems. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:3977-3983. [PMID: 10002008 DOI: 10.1103/physrevb.45.3977] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Martin T, Landauer R. Wave-packet approach to noise in multichannel mesoscopic systems. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:1742-1755. [PMID: 10001675 DOI: 10.1103/physrevb.45.1742] [Citation(s) in RCA: 192] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Berkovits R, Feng S. Fabry-Pérot interferometer with disorder: Light localization and correlations. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:97-104. [PMID: 10000157 DOI: 10.1103/physrevb.45.97] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Echternach PM, Bozler HM. Thermally induced characteristic-magnetoresistance-pattern changes on a mesoscopic gold wire. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:10905-10908. [PMID: 9999122 DOI: 10.1103/physrevb.44.10905] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Klepper SJ, Millo O, Keller MW, Prober DE, Sacks RN. Sensitivity of conductance fluctuations to the addition of single elastic scatterers in mesoscopic GaAs/AlxGa1-xAs heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:8380-8383. [PMID: 9998787 DOI: 10.1103/physrevb.44.8380] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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