Investigation of the DX center in heavily doped n-GaAs

The DX Center: Evidence for Charge Capture Via an Excited Intermediate State

We review three important experimental results which suggest that electron capture and emission by the DX center in AlxGa1-xAs proceeds via an excited intermediate state: the very different dependencies of the thermal capture and emission rates on alloy composition, the exponential dependence of the thermal capture rate on the quasi-equilibrium Fermi energy, and the thermal activation of the hot electron capture rate. None of these results is readily explained by a conventional lattice relaxation model, in which an electron is captured directly from the lowest lying band edge, but each can be simply explained if the dominant channel for multiphonon capture is via a transition state which lies well above the band edge. This picture is consistent with recent pseudopotential calculations which predict that the lattice relaxed state (the DX state) is stabilized by capture of more than one electron, since such a model naturally admits the possibility of an intermediate one-electron state.