Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing

Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In 0.17 Al 0.83 N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with E(AlInN(VBM) being above E(GaN)(VBM)). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering.

Fast physical random-number generation based on room-temperature chaotic oscillations in weakly coupled superlattices

An all-electronic physical random number generator at rates up to 80  Gbit/s is presented, based on weakly coupled GaAs/Ga0.55Al0.45As superlattices operated at room temperature. It is based on large-amplitude, chaotic current oscillations characterized by a bandwidth of several hundred MHz and do not require external feedback or conversion to an electronic signal prior to digitization. The method is robust and insensitive to external perturbations and its fully electronic implementation suggests scalability and minimal postprocessing in comparison to existing optical implementations.

Playing with carbon and silicon at the nanoscale

Because of its superior properties silicon carbide is one of the most promising materials for power electronics, hard- and biomaterials. In the solid phase, the electronic and optical properties are controlled by the stacking of double layers of Si and C atoms. In thin films, a change in the stacking order often requires stress, which can be achieved naturally in systems with nanometre length scale. For this reason, nanotubes, nanowires and clusters can be used as building blocks for the synthesis of novel materials. Furthermore, playing at the nanometre length scale enables the nature of the SiC bonding to be modified, which is of prime importance for atomic engineering of nanostructures. In this review, emphasis is placed on the theoretical principles associated with SiC cage-like clusters and experimental work resulting from them.