1/f noise in Cr films from spin-density-wave polarization rotation

Electronic Noise Spectroscopy of Quasi-Two-Dimensional Antiferromagnetic Semiconductors

We investigated low-frequency current fluctuations, i.e., electronic noise, in FePS3 van der Waals layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectroscopy for advanced materials characterization of the charge carrier dynamics affected by spin ordering and trapping states. Owing to the high resistivity of the material, we conducted measurements on vertical device configuration. The measured noise spectra reveal pronounced Lorentzian peaks of two different origins. One peak is observed only near the Néel temperature, and it is attributed to the corresponding magnetic phase transition. The second Lorentzian peak, visible in the entire measured temperature range, has characteristics of the trap-assisted generation-recombination processes similar to those in conventional semiconductors but shows a clear effect of the spin order reconfiguration near the Néel temperature. The obtained results contribute to understanding the electron and spin dynamics in this type of antiferromagnetic semiconductors and demonstrate the potential of electronic noise spectroscopy for advanced materials characterization.

Charge-Density-Wave Thin-Film Devices Printed with Chemically Exfoliated 1T-TaS2 Ink

We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin-film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS₂ crystals to produce fillers with nm-scale thickness and μm-scale lateral dimensions. Exfoliated 1T-TaS₂ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of filler particles thermophysical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS₂ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly commensurate to the commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS₂ filler particles rather than by electron-hopping transport between them. The obtained results are important for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.

Anomalous noise in the pseudogap regime of YBa2Cu3O(7-delta)

An unusual noise component is found near and below about 250 K in the normal state of underdoped YBCO and Ca-YBCO films. This noise regime, unlike the more typical noise above 250 K, has features expected for a symmetry-breaking collective electronic state. These include large individual fluctuators, a magnetic sensitivity, and aging effects. A possible interpretation in terms of fluctuating charge nematic order is presented.

Noise probe of the dynamic phase separation in La(2/3)Ca(1/3)MnO3

Giant random telegraph noise (RTN) in the resistance fluctuation of a macroscopic film of perovskite-type manganese oxide La(2/3)Ca(1/3)MnO3 has been observed at various temperatures ranging from 4 to 170 K, well below the Curie temperature ( T(C) approximately 210 K). The amplitudes of the two-level fluctuations vary from 0.01% to 0.2%. We discuss the origin of the RTN to be a dynamic mixed-phase percolative conduction process, where manganese clusters switch back and forth between two phases that differ in their conductivity and magnetization.