Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2?

Optically-active metastable defects in volumetric nanoplasmonic composites

Metastable defects in semiconductor materials have been well known for decades, but have only recently started to attract attention for their potential applications in information technology. Here, we describe active and passive nanoplasmonic materials with optically active metastable defects that can be switched on or off by cooling with or without laser illumination, respectively. To the best of our knowledge, this is the first report of metastable defects in either passive or active nanoplasmonic materials, and, more generally, in non-semiconducting materials. The nanocomposites are made of a sodium-boron-phosphate glass matrix doped with silver nanoparticles (nAg) or co-doped with nAg and Er³⁺ ions by NanoParticle Direct Doping method. We further show that the different origins of the two types of defect-related luminescence behaviour are attributable to either a metal-glass defect (MG1) or a metal-glass-rare-earth ion defect (MGR1). Such materials could potentially be used for data writing and erasing using laser illumination with a ‘tight’ focus such as direct laser writing.

The E1-E2 center in gallium arsenide is the divacancy

Based on defect energy levels computed from first-principles calculations, it is shown the E1-E2 center in irradiated GaAs cannot be due to an isolated arsenic vacancy. The only simple intrinsic defect with levels compatible with E1 and E2 is the divacancy. The arsenic monovacancy is reassigned to the E3 center in irradiated GaAs. These new assignments are shown to reconcile a number of seemingly contradictory experimental observations.

Origin of Fermi-level pinning at GaAs surfaces and interfaces

Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated.

Optically gated resonant emission of single quantum dots

We report on the resonant emission in coherently driven single semiconductor quantum dots. We demonstrate that an ultraweak nonresonant laser acts as an optical gate for the quantum dot resonant response. We show that the gate laser suppresses Coulomb blockade at the origin of a resonant emission quenching, and that the optically gated quantum dots systematically behave as ideal two-level systems in both regimes of coherent and incoherent resonant emission.

Theoretical Studies of Defects, Impurities, and Complexes in Semiconductors

Theoretical studies of microscopic properties of localized defects, impurities, and complexes in semiconductors have greatly progressed in the past decade. Theory has advanced beyond “point” defects to include lattice relaxations and distortions, interactions between defects, complex formation, and even some extended structures. Vibrational frequencies, hyperfine parameters, and other measurable quantities are being calculated from first principles. Both the one-effective-particle density-functional approach and the all-electron Hartree-Fock methods are able to predict a variety of microscopic properties of defects at or near the ab initio level. However, despite the progress achieved, theoretical descriptions only approximate the real world. In this paper, an overview is given of the way these calculations are done and of the main approximations involved. Although some of them will be eliminated by progress in computer technology, other problems such as electron correlation or excited states are likely to require new thinking.

Identification of the carbon antisite-vacancy pair in 4H-SiC

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacancy pair in the negative charge state (C(Si)V-(C)) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.

High-field optically detected EPR and ENDOR of semiconductor defects using W-band microwave Fabry-Pérot resonators

The designs of W-band (approximately 95 GHz) Fabry-Pérot microwave resonators for optically detected EPR and ENDOR using the magnetic circular dichroism of the optical absorption (MCDA) as well as for photo-luminescence-detected EPR are briefly described. We report on the first MCDA-detected high-field EPR/ENDOR investigation of the paramagnetic EL2+ defect in semi-insulating GaAs. The higher-order effects, which prevented the unambiguous analysis of previous MCDA-detected K-band EPR/ENDOR experiments could be suppressed in W-band. The analysis of the ENDOR spectra showed that an extremely precise alignment of the samples is necessary. The paramagnetic El2+ defect turned out to be an As antisite defect, which has four almost equivalent nearest 75As neighbours differing less than 1.5% in the superhyperfine interactions suggestive of an isolated As antisite, while the third 75As shell (fifth neighbour shell) is clearly of lower symmetry than expected for an isolated As antisite. We discuss as a possible solution to this paradoxical situation that EL2+ is an isolated antisite at room temperature, which at low temperature, where all magnetic resonance experiments are performed, associates itself with shallow acceptors such as Zn(Ga)- more than two nearest neighbour distances away. According to recent theoretical calculations, such 'loose' complexes with binding energies between 0.01 eV and 0.05 eV and disturb the equivalence of the nearest neighbour superhyperfine (shf) interactions less than 1.5%. Also, W-band EPR was measured using the photo-luminescence for detection to investigate P dopants in 6H-SiC.

Defects in semiconductors: some fatal, some vital

REVIEW The role of defects as essential entities in semiconductor materials is reviewed. Early experiments with semiconductors were hampered by the extreme sensitivity of the electronic properties to minute concentrations of impurities. Semiconductors were viewed as a family of solids with irreproducible properties. Scientific efforts overcame this idiosyncrasy and turned the art of impurity doping into today's exceedingly useful and reproducible technology that is used to control precisely electrical conductivity, composition, and minority-carrier lifetimes over wide ranges. Native defects such as vacancies and self-interstitials control basic processes, foremost self- and dopant diffusion. The structural properties of dislocations and higher dimensional defects have been studied with atomic resolution, but a thorough theoretical understanding of their electronic properties is incomplete. Reactions between defects within the host lattices are increasingly better understood and are used for gettering and electrical passivation of unwanted impurities. Metastable defects such as DX centers and the EL2-related arsenic antisite are briefly discussed. The recent development of isotopically controlled semiconductors has created new research opportunities in this field.