Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111)

Spin polarization of photoelectrons emitted from spin-orbit coupled surface states of Pb/Ge(111)

We report that the spin vector of photoelectrons emitted from an atomic layer Pb grown on a germanium substrate [Pb/Ge(111)] can be controlled using an electric field of light. The spin polarization of photoelectrons excited by a linearly polarized light is precisely investigated by spin- and angle-resolved photoemission spectroscopy. The spin polarization of the photoelectrons observed in the mirror plane reverses between p- and s-polarized lights. Considering the dipole transition selection rule, the surface state of Pb/Ge(111) is represented by a linear combination of symmetric and asymmetric orbital components coupled with spins in mutually opposite directions. The spin direction of the photoelectrons is different from that of the initial state when the electric field vector of linearly polarized light deviates from p- or s-polarization conditions. The quantum interference in the photoexcitation process can determine the direction of the spin vector of photoelectrons.

Structure determination of Pb/Ge(111)-β-(√3 × √3)R30° by dynamical low-energy electron diffraction analysis and first-principles calculation

We have determined the atomic structure of the Pb/Ge(111)-β-(√3 × √3)R30° surface, which was shown to exhibit a large Rashba spin splitting in a metallic surface state by dynamical low-energy electron diffraction analysis. The Pb coverage for the optimized atomic structure is 4/3 with one Pb atom located at every third H(3) site of the bulk-truncated Ge(111) surface and the other three near the T(1) sites but slightly displaced towards the T(4) sites. The determined atomic structure agrees well with the energetically optimized one obtained from the first-principles calculation. The calculation also revealed that the potential for the Pb atoms on the H(3) sites is very soft along the surface normal, suggesting that their vertical position is distributed within a range of about 0.2-0.3 Å. The previously proposed phase transition associated with the surface melting is discussed.

Spontaneous domain switching during phase separation of Pb on Ge(111)

Using low-energy electron microscopy (LEEM), we have discovered a novel phase separation mechanism for Pb on Ge(111). When the low Pb coverage (1 x 1) phase coexists with the high coverage beta phase, the surface consists of approximately 100 nm sized domains that spontaneously switch from one phase to the other. We argue this striking mechanism occurs because nanometer-scale domains can have density fluctuations comparable to the density difference between the two phases.

New (sqrt3 xsqrt 3)R30 degrees phase of Pb on Ge(111) and its consequence for the melting transition

Depending on the preparation method, we find two different structures of the Pb/Ge(111) system at a nominal coverage of 4 / 3 monolayer that exhibit different melting points. One is the well studied beta phase that melts at 270 degrees C, but the other is a new and metastable phase that melts at 330 degrees C. Using surface x-ray diffraction the atomic structure of both phases is found to be surprisingly similar. The difference in melting points can be explained by the distribution of the excess Pb present on the surface, which has a direct effect on the vacancy density. We propose a modified phase diagram, in which the melting temperature of the beta phase depends strongly on coverage.