Negative thermal expansion of diamond and zinc-blende semiconductors

Ab initio study of temperature-dependent piezoelectric and electronic properties of thermally stable GaPO4

Gallium-phosphate (GaPO4) is one of the ultra-high thermally stable piezoelectric materials with a high critical temperature of 1206 K. Here, first principles calculations with quasi-harmonic approximation are performed to study thermal and other physical properties of α-GaPO4. For the electronic structure, we focus on the electron-phonon interaction and lattice expansion effects on the temperature-dependent band gap, which plays a significant role in zero-point renormalization. Significantly, the large piezoelectric constants e11 primarily comes from intrinsic sensitivity of Ga and O sites to axial strain, while P atoms contribute little, which remains true in other quartz-like type APO4 (A = B, Al, In). Our work provides an insight into the temperature-dependent electronic and piezoelectric properties of α-GaPO4 and motivates its applications in a high temperature environment.

On the role of intermolecular vibrational motions for ice polymorphs I: Volumetric properties of crystalline and amorphous ices

Intermolecular vibrations and volumetric properties are investigated using the quasiharmonic approximation with the TIP4P/2005, TIP4P/Ice, and SPC/E potential models for most of the known crystalline and amorphous ice forms that have hydrogen-disordering. The ice forms examined here cover low pressure ices (hexagonal and cubic ice I, XVI, and hypothetical dtc ice), medium pressure ices (III, IV, V, VI, XII, hydrogen-disordered variant of ice II), and high pressure ice (VII) as well as the low density and the high density amorphous forms. We focus on the thermal expansivities and the isothermal compressibilities in the low temperature regime over a wide range of pressures calculated via the intermolecular vibrational free energies. Negative thermal expansivity appears only in the low pressure ice forms. The sign of the thermal expansivity is elucidated in terms of the mode Grüneisen parameters of the low frequency intermolecular vibrational motions. Although the band structure for the low frequency region of the vibrational density of state in the medium pressure ice has a close resemblance to that in the low pressure ice, its response against volume variation is opposite. We reveal that the mixing of translational and rotational motions in the low frequency modes plays a crucial role in the appearance of the negative thermal expansivity in the low pressure ice forms. The medium pressure ices can be further divided into two groups in terms of the hydrogen-bond network flexibility, which is manifested in the properties on the molecular rearrangement against volume variation, notably the isothermal compressibility.

Negative Thermal Expansion in Nanosolids

Nanosolids usually exhibit a variety of peculiar physical features due to the size effect. The unique surface electronic states and coordination structures of nanosolids make them particularly important as promising functional materials. After several decades of research effort on the preparation processes and formation mechanisms of nanomaterials, the attention of nanoscience has been shifted to their functionalization and utilization. In the development of nanodevices, the thermal expansion matching between nanosized components is becoming increasingly important for the selection of units and design of nanodevices. In nanosolids, particularities of bonding features and coordination environments lead to size-dependent thermal expansion behavior that is significantly different from the behavior of their bulk counterparts. Thus, size tuning becomes one of the most efficient techniques in tailoring lattice thermal expansion. Unlike the traditional tailoring methods like chemical doping, the modification of chemical bonds and lattice vibration modes mainly contributing to the abnormal thermal expansion of nanosolids can be realized by adjustment of local coordination on the surface and surface/interface lattice strain. With the introduction of the nanosizing effect, the functional properties of nanosolids can be thoroughly remolded, which provides a huge space for functional applications of negative thermal expansion (NTE) nanosolids. However, understanding the origin of novel thermal expansion in nanosolids remains a challenging issue because of the lack of knowledge of precise atomic arrangements at both long-range and local structure levels. In this Account, by virtue of various advanced characterization techniques, we provide a comprehensive understanding at the atomic level of the abnormal thermal expansion behaviors in nanosized PbTiO₃-based compounds, oxides, fluorides, and bimetallic alloys. Our results demonstrate that nanoscale structural features can be used to alter the spontaneous polarization, surficial/interfacial coordination, local lattice symmetry, and elemental distribution, resulting in the crossover of thermal expansion from the bulk and the generation of zero thermal expansion (ZTE). Furthermore, structural peculiarities in nanosolids, e.g., the lack of long-range coherence, abnormal surficial/interfacial bonding, lattice imperfection, and distribution of local phases, open the door for local-scale manipulations of the physical properties of electronic structure and lattice vibration during adjustment of thermal expansion. For the development of nanodevices with high thermostability, atomic-level information on the nanostructure thermal evolution provides a guideline for intelligent designs of the functional components and matrix. Understanding of the structural transformation in nanosolids will help future exploration of functional nanomaterials based on short-range atomistic design and optimization.

Electronic Property and Negative Thermal Expansion Behavior of Si136-xGex (x = 8, 32, 40, 104) Clathrate Solid Solution from First Principles

We present the electronic and vibrational studies on Si_136-xGe_x (x = 8, 32, 40, 104) alloys, using the local density approximation (LDA) scheme. We find that a “nearly-direct” band gap exists in the band structure of Si₁₀₄Ge₃₂ and Si₉₆Ge₄₀, when compared with the similarly reported results obtained using a different computational code. The calculated electronic density of state (EDOS) profiles for the valence band remain nearly identical and independent of the Ge concentration (x = 32, 40, 104) even though some variation is found in the lower conduction band (tail part) as composition x is tuned from 8 (or 40) to 104. The negative thermal expansion (NTE) phenomenon is explored using quasi-harmonic approximation (QHA), which takes the volume dependence of the vibrational mode frequencies into consideration, while neglecting the temperature effect on phonon anharmonicity. Determined macroscopic Grüneisen parameter trends show negative values in the low temperature regime (1 K < T < 115 K), indicating the NTE behavior found in Si₁₂₈Ge₈ is analogous to the experimental result for Si₁₃₆. Meanwhile, calculations for the ratio of the vibrational entropy change to the volume change at several characteristic temperatures reconfirm the existence of NTE in Si₁₂₈Ge₈ and Si₁₀₄Ge₃₂.

Interplay between Phonons and Anisotropic Elasticity Drives Negative Thermal Expansion in PbTiO_{3}

We use first-principles theory to show that the ingredients assumed to be essential to the occurrence of negative thermal expansion (NTE)-rigid unit phonon modes with negative Grüneisen parameters-are neither sufficient nor necessary for a material to undergo NTE. Instead, we find that NTE in PbTiO_{3} involves a delicate interplay between the phonon properties of a material (Grüneisen parameters) and its anisotropic elasticity. These unique insights open new avenues in our fundamental understanding of the thermal properties of materials and in the search for NTE in new materials classes.

Pressure-driven phase transitions and reduction of dimensionality in 2D silicon nanosheets

In-situ high-pressure synchrotron X-ray powder diffraction studies up to 21 GPa of CVD-grown silicon 2D-nanosheets establish that the structural phase transitions depend on size and shape. For sizes between 9.3(7) nm and 15.2(8) nm we observe an irreversible phase transition sequence from I (cubic) → II (tetragonal) → V (hexagonal) during pressure increase and during decompression below 8 GPa the emergence of an X-ray amorphous phase. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and atomic force microscopy (AFM) images of this X-ray amorphous phase reveal the formation of significant numbers of 1D nanowires with aspect ratios > 10, which are twinned and grow along the <111> direction. We discovered a reduction of dimensionality under pressure from a 2D morphology to a 1D wire in a material with a diamond structure. MD simulations indicate the reduction of thermal conductivity in such nanowires.

Atomic-scale study of stacking faults in Zr hydrides and implications on hydride formation

We performed atomic-scale ab initio calculations to investigate the stacking fault (SF) properties of the metastable ζ-Zr₂H zirconium hydride. The effect of H near the SF was found to entail the existence of negative SF energies, showing that the ζ compound is probably unstable with respect to shearing in the basal plane. The effect of temperature on SFs was investigated by means of free energy calculations in the quasiharmonic approximation. This evidenced unexpectedly large temperature effects, confirming the main conclusions drawn at 0 K, in particular the ζ mechanical instability. The complex behaviour of H atoms during the shear process suggested ζ-hcp  →  Zr₂H[Formula: see text]-fcc as a plausible shear path leading to an fcc compound with same composition as ζ. Finally, as shown by an analysis based on microelasticity, this Zr₂H[Formula: see text]-fcc intermediate compound may be relevant for better interpreting the currently intricate issue of hydride habit planes in zirconium.

Nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon

Despite the widespread use of silicon in modern technology, its peculiar thermal expansion is not well understood. Adapting harmonic phonons to the specific volume at temperature, the quasiharmonic approximation, has become accepted for simulating the thermal expansion, but has given ambiguous interpretations for microscopic mechanisms. To test atomistic mechanisms, we performed inelastic neutron scattering experiments from 100 K to 1,500 K on a single crystal of silicon to measure the changes in phonon frequencies. Our state-of-the-art ab initio calculations, which fully account for phonon anharmonicity and nuclear quantum effects, reproduced the measured shifts of individual phonons with temperature, whereas quasiharmonic shifts were mostly of the wrong sign. Surprisingly, the accepted quasiharmonic model was found to predict the thermal expansion owing to a large cancellation of contributions from individual phonons.

Local Structural Distortion Induced Uniaxial Negative Thermal Expansion in Nanosized Semimetal Bismuth

The corrugated layer structure bismuth has been successfully tailored into negative thermal expansion along c axis by size effect. Pair distribution function and extended X-ray absorption fine structure are combined to reveal the local structural distortion for nanosized bismuth. The comprehensive method to identify the local structure of nanomaterials can benefit the regulating and controlling of thermal expansion in nanodivices.

Negative thermal expansion and associated anomalous physical properties: review of the lattice dynamics theoretical foundation

Negative thermal expansion (NTE) is the phenomenon in which materials shrink rather than expand on heating. Although NTE had been previously observed in a few simple materials at low temperature, it was the realisation in 1996 that some materials have NTE over very wide ranges of temperature that kick-started current interest in this phenomenon. Now, nearly two decades later, a number of families of ceramic NTE materials have been identified. Increasingly quantitative studies focus on the mechanism of NTE, through techniques such as high-pressure diffraction, local structure probes, inelastic neutron scattering and atomistic simulation. In this paper we review our understanding of vibrational mechanisms of NTE for a range of materials. We identify a number of different cases, some of which involve a small number of phonons that can be described as involving rotations of rigid polyhedral groups of atoms, others where there are large bands of phonons involved, and some where the transverse acoustic modes provide the main contribution to NTE. In a few cases the elasticity of NTE materials has been studied under pressure, identifying an elastic softening under pressure. We propose that this property, called pressure-induced softening, is closely linked to NTE, which we can demonstrate using a simple model to describe NTE materials. There has also been recent interest in the role of intrinsic anharmonic interactions on NTE, particularly guided by calculations of the potential energy wells for relevant phonons. We review these effects, and show how anhamonicity affects the response of the properties of NTE materials to pressure.

Remote sensing of sample temperatures in nuclear magnetic resonance using photoluminescence of semiconductor quantum dots

Knowledge of sample temperatures during nuclear magnetic resonance (NMR) measurements is important for acquisition of optimal NMR data and proper interpretation of the data. Sample temperatures can be difficult to measure accurately for a variety of reasons, especially because it is generally not possible to make direct contact to the NMR sample during the measurements. Here I show that sample temperatures during magic-angle spinning (MAS) NMR measurements can be determined from temperature-dependent photoluminescence signals of semiconductor quantum dots that are deposited in a thin film on the outer surface of the MAS rotor, using a simple optical fiber-based setup to excite and collect photoluminescence. The accuracy and precision of such temperature measurements can be better than ±5K over a temperature range that extends from approximately 50K (-223°C) to well above 310K (37°C). Importantly, quantum dot photoluminescence can be monitored continuously while NMR measurements are in progress. While this technique is likely to be particularly valuable in low-temperature MAS NMR experiments, including experiments involving dynamic nuclear polarization, it may also be useful in high-temperature MAS NMR and other forms of magnetic resonance.

Modelling the lattice dynamics in Si(x)Ge(1-x) alloys

The development of simplified models for the simulation of thermodynamic and thermal transport properties in random alloys is of great importance. In this paper we show how a simple second nearest neighbour model can reliably capture the lattice dynamics of Si(x)Ge(1-x) alloys. The model parameters are extracted from DFT-calculated force constant matrices for pure Si, pure Ge and the Si0.5Ge0.5 ordered alloy. We extract the nearest neighbour contributions directly from density functional theory, whereas effective interactions are obtained for the second nearest neighbour contributions. We demonstrate how the thermal properties, including the expansion coefficient, can be reliably reproduced and that the model is transferable to random Si(x)Ge(1-x) alloys.

Thermal expansion of diamond at low temperatures

Temperature variation of a lattice parameter of a synthetic diamond crystal (type IIa) was measured using high-energy-resolution x-ray Bragg diffraction in backscattering. A 2 order of magnitude improvement in the measurement accuracy allowed us to directly probe the linear thermal expansion coefficient at temperatures below 100 K. The lowest value measured was 2x10{-9} K-1. It was found that the coefficient deviates from the expected Debye law (T3) while no negative thermal expansion was observed. The anomalous behavior might be attributed to tunneling states due to low concentration impurities.

Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy

It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.

Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at approximately 200 K, reverts to a new ((square root 3)x(square root 3))R30 degrees phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition, which is fully reversible. Angle-resolved photoemission experiments show that, concomitantly with the structural phase transition, a metal-insulator phase transition takes place. The ((square root 3)x(square root 3))R30 degrees ground state is interpreted as the formation of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.

Validity of the quasiharmonic analysis for surface thermal expansion of Ag(111)

For temperatures above 0.6T(m) (the bulk melting temperature) we show that the quasiharmonic approximation leads to increasingly larger values of the surface thermal expansion of Ag(111) as compared to that obtained from molecular dynamics simulations based on fully anharmonic interaction potentials. The inadequacy of the quasiharmonic approximation is traced to the excessive softening of the surface phonon frequencies. We discuss the validity of the quasiharmonic approximation for surfaces at elevated temperature, in view of recent x-ray scattering data on Ag(111).