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Kong Z, Song Y, Wang H, Liu X, Wang X, Liu J, Li B, Su J, Tan X, Luan Q, Lin H, Ren Y, Zhang Y, Liu J, Li J, Du A, Radamson HH, Zhao C, Ye T, Wang G. Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56567-56574. [PMID: 37988059 DOI: 10.1021/acsami.3c14168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
SiGe/Si multilayer is the core structure of the active area of gate-all-around field-effect transistors and semiconductor quantum computing devices. In this paper, high-quality SiGe/Si multilayers have been grown by a reduced-pressure chemical vapor deposition system. The effects of temperature, pressure, interface processing (dichlorosilane (SiH2Cl2, DCS) and hydrogen chloride (HCl)) on improving the transition thickness of SiGe to Si interfaces were investigated. The interface quality was characterized by transmission electron microscopy/atomic force microscopy/high-resolution X-ray diffraction methods. It was observed that limiting the migration of Ge atoms in the interface was critical for optimizing a sharp interface, and the addition of DCS was found to decrease the interface transition thickness. The change of the interfacial transition layer is not significant in the short treatment time of HCl. When the processing time of HCl is increased, the internal interface is optimized to a certain extent but the corresponding film thickness is also reduced. This study provides technical support for the acquisition of an abrupt interface and will have a very favorable influence on the performance improvement of miniaturized devices in the future.
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Affiliation(s)
- Zhenzhen Kong
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
- Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yanpeng Song
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
| | - Hailing Wang
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
| | - Xiaomeng Liu
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
| | - Xiangsheng Wang
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
| | - Jinbiao Liu
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
- Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Ben Li
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, P. R. China
| | - Jiale Su
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Xinguang Tan
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
| | - Qingjie Luan
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
| | - Hongxiao Lin
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, P. R. China
| | - Yuhui Ren
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
- Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yiwen Zhang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
- Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jingxiong Liu
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
- Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Junfeng Li
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Anyan Du
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Henry H Radamson
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, P. R. China
| | - Chao Zhao
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
| | - Tianchun Ye
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, P. R. China
| | - Guilei Wang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
- Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, P. R. China
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Hricovini K, Günther R, Thiry P, Taleb-Ibrahimi A, Indlekofer G, Bonnet JE, Dumas P, Petroff Y, Blase X, Zhu X, Louie SG, Chabal YJ, Thiry PA. Electronic structure and its dependence on local order for H/Si(111)-(1 x 1) surfaces. PHYSICAL REVIEW LETTERS 1993; 70:1992-1995. [PMID: 10053438 DOI: 10.1103/physrevlett.70.1992] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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