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Jmerik V, Nechaev D, Orekhova K, Prasolov N, Kozlovsky V, Sviridov D, Zverev M, Gamov N, Grieger L, Wang Y, Wang T, Wang X, Ivanov S. Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240-270 nm Spectral Range. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2553. [PMID: 34684994 PMCID: PMC8537242 DOI: 10.3390/nano11102553] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Revised: 09/27/2021] [Accepted: 09/27/2021] [Indexed: 11/29/2022]
Abstract
Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which provides the spiral growth of densely packed atomically smooth hillocks without metal droplets. These structures have ML-stepped terrace-like surface topology in the entire QW thickness range from 0.75-7 ML and absence of stress at the well thickness below 2 ML. Satisfactory quantum confinement and mitigating the quantum-confined Stark effect in the stress-free MQW structures enable one to achieve the relatively bright UV cathodoluminescence with a narrow-line (~15 nm) in the sub-250-nm spectral range. The structures with many QWs (up to 400) exhibit the output optical power of ~1 W at 240 nm, when pumped by a standard thermionic-cathode (LaB6) electron gun at an electron energy of 20 keV and a current of 65 mA. This power is increased up to 11.8 W at an average excitation energy of 5 µJ per pulse, generated by the electron gun with a ferroelectric plasma cathode at an electron-beam energy of 12.5 keV and a current of 450 mA.
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Affiliation(s)
- Valentin Jmerik
- Centre of Nanoheterostructure Physics, Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia; (D.N.); (K.O.); (N.P.); (S.I.)
| | - Dmitrii Nechaev
- Centre of Nanoheterostructure Physics, Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia; (D.N.); (K.O.); (N.P.); (S.I.)
| | - Kseniya Orekhova
- Centre of Nanoheterostructure Physics, Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia; (D.N.); (K.O.); (N.P.); (S.I.)
| | - Nikita Prasolov
- Centre of Nanoheterostructure Physics, Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia; (D.N.); (K.O.); (N.P.); (S.I.)
| | - Vladimir Kozlovsky
- Laboratory for Cathode Ray Pumped Lasers, P. N. Lebedev Physical Institute, Leninsky Ave. 53, 119991 Moscow, Russia; (V.K.); (D.S.); (M.Z.)
| | - Dmitry Sviridov
- Laboratory for Cathode Ray Pumped Lasers, P. N. Lebedev Physical Institute, Leninsky Ave. 53, 119991 Moscow, Russia; (V.K.); (D.S.); (M.Z.)
| | - Mikhail Zverev
- Laboratory for Cathode Ray Pumped Lasers, P. N. Lebedev Physical Institute, Leninsky Ave. 53, 119991 Moscow, Russia; (V.K.); (D.S.); (M.Z.)
- Department of Physics, Moscow Technological University, Vernadsky Ave. 78, 119454 Moscow, Russia;
| | - Nikita Gamov
- Department of Physics, Moscow Technological University, Vernadsky Ave. 78, 119454 Moscow, Russia;
| | - Lars Grieger
- Application Competence Center, Malvern Panalytical B.V., Lelyweg 1 (7602 EA), P.O. Box 13, 7600 AA Almelo, The Netherlands;
| | - Yixin Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nanooptoelectronics, School of Physics, Peking University, Beijing 100871, China; (Y.W.); (X.W.)
| | - Tao Wang
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China;
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nanooptoelectronics, School of Physics, Peking University, Beijing 100871, China; (Y.W.); (X.W.)
| | - Sergey Ivanov
- Centre of Nanoheterostructure Physics, Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia; (D.N.); (K.O.); (N.P.); (S.I.)
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Müller E, Gerthsen D. Composition quantification of electron-transparent samples by backscattered electron imaging in scanning electron microscopy. Ultramicroscopy 2016; 173:71-75. [PMID: 27940341 DOI: 10.1016/j.ultramic.2016.12.003] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2016] [Revised: 11/23/2016] [Accepted: 12/02/2016] [Indexed: 11/29/2022]
Abstract
The contrast of backscattered electron (BSE) images in scanning electron microscopy (SEM) depends on material parameters which can be exploited for composition quantification if some information on the material system is available. As an example, the In-concentration in thin InxGa1-xAs layers embedded in a GaAs matrix is analyzed in this work. The spatial resolution of the technique is improved by using thin electron-transparent specimens instead of bulk samples. Although the BSEs are detected in a comparably small angular range by an annular semiconductor detector, the image intensity can be evaluated to determine the composition and local thickness of the specimen. The measured intensities are calibrated within one single image to eliminate the influence of the detection and amplification system. Quantification is performed by comparison of experimental and calculated data. Instead of using time-consuming Monte-Carlo simulations, an analytical model is applied for BSE-intensity calculations which considers single electron scattering and electron diffusion.
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Affiliation(s)
- E Müller
- Laboratory for Electron Microscopy, Karlsruhe Institute of Technology (KIT), Engesserstr. 7, 76131 Karlsruhe, Germany.
| | - D Gerthsen
- Laboratory for Electron Microscopy, Karlsruhe Institute of Technology (KIT), Engesserstr. 7, 76131 Karlsruhe, Germany
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Rosenauer A, Gerthsen D. Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images. ADVANCES IN IMAGING AND ELECTRON PHYSICS 1999. [DOI: 10.1016/s1076-5670(08)70187-3] [Citation(s) in RCA: 45] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
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Tit N, Peressi M. Electronic structure of GaAs with an InAs (001) monolayer. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:10776-10779. [PMID: 9980167 DOI: 10.1103/physrevb.52.10776] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Shchukin VA, Borovkov AI, Ledentsov NN, Kop'ev PS. Theory of quantum-wire formation on corrugated surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:17767-17779. [PMID: 9978810 DOI: 10.1103/physrevb.51.17767] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Weihofen R, Weiser G, Starck C, Simes RJ. Energy gaps in strained In1-xGaxAs/In1-yGayAszP1-z quantum wells grown on (001) InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:4296-4305. [PMID: 9979272 DOI: 10.1103/physrevb.51.4296] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Alonso MI, Ilg M, Ploog KH. Optical investigation of the electronic structure of single ultrathin InAs layers grown pseudomorphically on (100) and (311)A GaAs substrates. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:1628-1635. [PMID: 9976348 DOI: 10.1103/physrevb.50.1628] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Peressi M, Baroni S. Bulk and interfacial strain in Si/Ge heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:7490-7498. [PMID: 10009488 DOI: 10.1103/physrevb.49.7490] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Massies J, Grandjean N. Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials. PHYSICAL REVIEW LETTERS 1993; 71:1411-1414. [PMID: 10055533 DOI: 10.1103/physrevlett.71.1411] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Pelekanos NT, Peyla P, Dang LS, Mariette H, Jouneau PH, Tardot A, Magnea N. Ultrathin pseudomorphic layers of ZnTe in CdTe/(Cd,Zn)Te superlattices: A direct optical probe of the mixed-type band configuration. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:1517-1524. [PMID: 10008512 DOI: 10.1103/physrevb.48.1517] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tapfer L. Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:2298-2303. [PMID: 10008621 DOI: 10.1103/physrevb.48.2298] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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