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Results Analysis
For: Lohner A, Woerner M, Elsaesser T, Kaiser W. Picosecond capture of photoexcited holes by shallow acceptors in p-type GaAs. Phys Rev Lett 1992;68:3920-3923. [PMID: 10045838 DOI: 10.1103/physrevlett.68.3920] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Number Cited by Other Article(s)
1
Silicon as a model ion trap: Time domain measurements of donor Rydberg states. Proc Natl Acad Sci U S A 2008. [DOI: 10.1073/pnas.0802721105] [Citation(s) in RCA: 66] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]  Open
2
Varani L, Reggiani L, Mitin V, Kuhn T. Nonexponential generation-recombination dynamics in doped semiconductors as a possible source of high-frequency 1/f noise. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:4405-4411. [PMID: 10008913 DOI: 10.1103/physrevb.48.4405] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Woerner M, Lohner A, Elsaesser T, Kaiser W. Capture of hot holes by shallow acceptors in p-type GaAs studied by picosecond infrared spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:12498-12509. [PMID: 10005442 DOI: 10.1103/physrevb.47.12498] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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