Effects of dephasing and dissipation on quantum noise in conductors

Tunneling current and noise of entangled electrons in correlated double quantum dot

We developed general approach for the analysis of tunneling current and its zero frequency noise for a wide class of systems where electron transport occurs through the intermediate structure with localized electrons. Proposed approach opens the possibility to study electron transport through multi-electron correlated states and allows to reveal the influence of spatial and spin symmetry of the total system on the electron transport. This approach is based on Keldysh diagram technique in pseudo-particle representation taking into account the operator constraint on the number of pseudo-particles, which gives the possibility to exclude non-physical states. It was shown that spatial and spin symmetry of the total system can block some channels for electron transport through the correlated quantum dots. Moreover, it was demonstrated that the stationary tunneling current and zero frequency noise in correlated coupled quantum dots depend on initial state of the system. In the frame of the proposed approach it was also shown that for the parallel coupling of two correlated quantum dots to the reservoirs tunneling current and its zero frequency noise are suppressed if tunneling occurs through the entangled triplet state with zero total spin projection on the z axis or enhanced for the tunneling through the singlet state in comparison with electron transport through the uncorrelated localized single-electron state. Obtained results demonstrate that two-electron entangled states in correlated quantum dots give the possibility to tune the zero frequency noise amplitude by blocking some channels for electron transport that is very promising in the sense of two-electron entangled states application in quantum communication and logic devices. The obtained nonmonotonic behavior of Fano factor as a function of applied bias is the direct manifestation of the possibility to control the noise to signal ration in correlated quantum dots. We also provide detailed calculations of current and noise for both single type of carriers and two different types of carriers in the presence and in the absence of Coulomb interaction in Supplementary materials.

Shot noise in ballistic graphene

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2-30 K at low frequency (f=600-850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F ~ 1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.

Effect of electron-phonon scattering on shot noise in nanoscale junctions

We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasiballistic transport. We predict that when the local thermal energy of the junction is larger than its lowest vibrational mode energy eV(c), the inelastic contribution to shot noise (conductance) increases (decreases) with bias as V (sqrt[V]). The corresponding Fano factor thus increases as sqrt[V]. We also show that the inelastic contribution to the Fano factor saturates with increasing thermal current exchanged between the junction and the bulk electrodes to a value which, for V >> V(c), is independent of bias. These predictions can be readily tested experimentally.

Shot noise in linear macroscopic resistors

We report on direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. The present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.

Shot noise spectrum of open dissipative quantum two-level systems

We study the current noise spectrum of qubits under transport conditions in a dissipative bosonic environment. We combine (non-)Markovian master equations with correlation functions in Laplace space to derive a noise formula for both weak and strong coupling to the bath. The coherence-induced reduction of noise is diminished by weak dissipation and/or a large level separation (bias). For weak dissipation, we demonstrate that the dephasing and relaxation rates of the two-level systems can be extracted from noise. In the strong dissipation regime, the localization-delocalization transition becomes visible in the low-frequency noise.