Time-irreversible random telegraph signal due to current along a single hopping chain

Hopping conduction and random telegraph signal in an exfoliated multilayer MoS2 field-effect transistor

We investigate the hopping conduction and random telegraph signal caused by various species of interface charge scatterers in a MoS₂ multilayer field-effect transistor. The temperature dependence of the channel resistivity shows that at low temperatures and low carrier densities the carrier transport is via Mott variable range hopping with a hopping length changing from 41 to 80 nm. The hopping conduction was due to electron tunneling through localized band tail states formed by the scatterers located in the vicinity of the MoS₂ layer. In the temperature range of 40-70 K, we observed random telegraph signal (RTS) that is caused by the capture and emission of a carrier by the interface traps that are located away from the layer. These traps form strong potential that interact with the layer and change the potential profile of the electron system. The characteristics of RTS depend strongly on gate bias and temperature, as well as the application of a magnetic field.

Effect of impurity scattering on the linear and nonlinear conductances of quasi-one-dimensional disordered quantum wires by asymmetrically lateral confinement

We have studied the linear conductance and source-drain bias spectroscopies of clean and disordered quantum wires (QWs) against thermal cycling and lateral shifting, which change the impurity configuration. Conductance quantization and the zero bias anomaly (ZBA) are robust in clean QWs. In contrast, disordered QWs show complexities in the ways of conductance resonance, peak splitting and trace crossing in source-drain bias spectroscopies. The experimental results and theoretical predictions are in congruence. Moreover, the resonant state arising from the impurities results in either a single peak or double-splitting peaks in the spectroscopies from the detailed impurity configurations. The resonant splitting peaks are found to influence the ZBA, indicating that a clean QW is crucial for investigating the intrinsic characteristics of the ZBA of QWs.

Insitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-gated devices

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of "bias cooling." Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.

Modulation of noise in submicron GaAs/AlGaAs hall devices by gating

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 to 60 K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2 V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.