Qin XR, Swartzentruber BS, Lagally MG. Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages.
PHYSICAL REVIEW LETTERS 2000;
84:4645-4648. [PMID:
10990761 DOI:
10.1103/physrevlett.84.4645]
[Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2000] [Indexed: 05/23/2023]
Abstract
The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.
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