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For: Crain J, Ackland GJ, Piltz RO, Hatton PD. Phase-transition-induced defect formation in III-V semiconductors. Phys Rev Lett 1993;70:814-817. [PMID: 10054210 DOI: 10.1103/physrevlett.70.814] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Number Cited by Other Article(s)
1
Fuks D, Dorfman S, Ackland G. Pressure-induced thermodynamic properties of atom-vacancy solid solution. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:9726-9729. [PMID: 9984705 DOI: 10.1103/physrevb.54.9726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Crain J, Ackland GJ, Maclean JR, Piltz RO, Hatton PD, Pawley GS. Reversible pressure-induced structural transitions between metastable phases of silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:13043-13046. [PMID: 9975487 DOI: 10.1103/physrevb.50.13043] [Citation(s) in RCA: 68] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Crain J, Piltz RO, Ackland GJ, Clark SJ, Payne MC, Milman V, Lin JS, Hatton PD, Nam YH. Tetrahedral structures and phase transitions in III-V semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:8389-8401. [PMID: 9974857 DOI: 10.1103/physrevb.50.8389] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Clark SJ, Ackland GJ, Crain J, Payne MC. Very low energy surface of silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:5728-5731. [PMID: 9976925 DOI: 10.1103/physrevb.50.5728] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Clark SJ, Ackland GJ, Crain J. Theoretical study of high-density phases of covalent semiconductors. II. Empirical treatment. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:5341-5352. [PMID: 10011486 DOI: 10.1103/physrevb.49.5341] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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