Evidence for modification of the electronic density of states by zero-point lattice motion in one dimension: Luminescence and resonance Raman studies of an MX solid

Experimental determination of the bare energy gap of GaAs without the zero-point renormalization

The energy gap of simple band insulators like GaAs is a strong function of temperature due to the electron-phonon interactions. Interestingly, the perturbation from zero-point phonons is also predicted to cause significant (a few percent) renormalization of the energy gap at absolute zero temperature but its value has been difficult to estimate both theoretically and, of course, experimentally. Given the experimental evidence (Bhattacharya et al 2015 Phys. Rev. Lett. 114 047402) that strongly supports that the exponential broadening (Urbach tail) of the excitonic absorption edge at low temperatures is the manifestation of this zero temperature electron-phonon scattering, we argue that the location of the Urbach focus is the zero temperature unrenormalized gap. Experiments on GaAs yield the zero temperature bare energy gap to be 1.581 eV and thus the renormalization is estimated to be 66 meV.