Diffusion and dimer exchange in surfactant-mediated epitaxial growth

Importance of Interfacial Structures in the Catalytic Effect of Transition Metals on Diamond Growth

Here, using ab initio calculations, we investigated the interaction between transition metals (M) and diamond C(111) surfaces. As a physical parameter describing the catalytic effect of a transition metal on diamond growth, we considered interfacial energy difference, ΔE int, between 1 × 1 and 2 × 1 models of M/C(111). The results showed that the transition-metal elements in the middle of the periodic table (groups 4-10) favor a 1 × 1 M/C(111) structure with diamond bulk-like interfaces, while the elements at the sides of the periodic table (groups 3, 11, and 12) favor a 2 × 1 M/C(111) structure with the 2 × 1 Pandey chain structure of C(111) underneath M. In addition, calculations of MC carbide formation for early transition metals (groups 3-6) showed that they have a tendency to form MC rather than M/C(111), which explains their low efficiency as catalysts for diamond growth. Further analysis suggests that ΔE int could serve as another parameter (catalytic descriptor) for describing catalytic diamond growth in addition to the conventional parameter of the melting temperature of M.

Novel pathway to the growth of diamond on cubic beta-SiC(001)

By carrying out first-principles calculations on diamond-forming processes, we predict a method for the heteroepitaxial growth of diamond on cubic beta-SiC(001). In the method, we used two processes: (i) the preformation of an sp(3)-like surface configuration of beta-SiC(001) by the adsorption of group-V surfactants; (ii) the successive growth of diamond by the segregation of the surfactants onto a surface and the desorption of surface hydrogen. Analyzing the segregation energies, we found that the atomic size effect plays a crucial role in the surfactant-mediated growth of diamond on beta-SiC(001).