Origin of the nu =1/2 fractional quantum Hall state in wide single quantum wells

Fractional Quantum Hall State at Filling Factor ν=1/4 in Ultra-High-Quality GaAs Two-Dimensional Hole Systems

Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors ν<1. Here, we report evidence for an even-denominator FQHS at ν=1/4 in ultra-high-quality two-dimensional hole systems confined to modulation-doped GaAs quantum wells. We observe a deep minimum in the longitudinal resistance at ν=1/4, superimposed on a highly insulating background, suggesting a close competition between the ν=1/4 FQHS and the magnetic-field-induced, pinned Wigner solid states. Our experimental observations are consistent with the very recent theoretical calculations that predict that substantial Landau level mixing, caused by the large hole effective mass, can induce composite fermion pairing and lead to a non-Abelian FQHS at ν=1/4. Our results demonstrate that Landau level mixing can provide a very potent means for tuning the interaction between composite fermions and creating new non-Abelian FQHSs.

Highly Anisotropic Even-Denominator Fractional Quantum Hall State in an Orbitally Coupled Half-Filled Landau Level

The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the competition and interplay between the even-denominator FQHSs and other ground states, such as anisotropic phases and composite fermion Fermi seas. Here, we report the observation of an even-denominator fractional quantum Hall state with highly anisotropic in-plane transport coefficients at Landau level filling factor ν=3/2. We observe this state in an ultra-high-quality GaAs two-dimensional hole system when a large in-plane magnetic field is applied. By increasing the in-plane field, we observe a sharp transition from an isotropic composite fermion Fermi sea to an anisotropic even-denominator FQHS. Our data and calculations suggest that a unique feature of two-dimensional holes, namely the coupling between heavy-hole and light-hole states, combines different orbital components in the wave function of one Landau level, and leads to the emergence of a highly anisotropic even-denominator fractional quantum Hall state. Our results demonstrate that the GaAs two-dimensional hole system is a unique platform for the exploration of exotic, many-body ground states.

Valley-Tunable Even-Denominator Fractional Quantum Hall State in the Lowest Landau Level of an Anisotropic System

Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors (ν) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at ν=1/2 in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multivalley degree of freedom offer an unprecedented tunability of the ν=1/2 FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the ν=1/2 FQHS depend strongly on valley occupancy.

Even-Denominator Fractional Quantum Hall State at Filling Factor ν=3/4

Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasiparticles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor ν=3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Our magnetotransport measurements reveal a strong minimum in the longitudinal resistance at ν=3/4, accompanied by a developing Hall plateau centered at (h/e^{2})/(3/4). This even-denominator FQHS is very unusual as it is observed in the lowest Landau level and in a 2D hole system. While its origin is unclear, it is likely a non-Abelian state, emerging from the residual interaction between composite fermions.

Fractional Quantum Hall Effect Energy Gaps: Role of Electron Layer Thickness

The fractional quantum Hall effect stands as a quintessential manifestation of an interacting two-dimensional electron system. One of the fractional quantum Hall effect's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a systematic experimental study that incorporates very high-quality two-dimensional electron systems confined to GaAs quantum wells with fixed density and varying well widths. The results demonstrate a clear decrease of the energy gap as the electron layer is made thicker and the short-range component of the Coulomb interaction is weakened. We also provide a quantitative comparison between the measured energy gaps and the available theoretical calculations that takes into account the role of finite layer thickness and Landau level mixing. All the measured energy gaps fall below the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find better overall agreement between the measured and calculated energy gaps, although some puzzling discrepancies remain.

Topological Exciton Fermi Surfaces in Two-Component Fractional Quantized Hall Insulators

A wide variety of two-dimensional electron systems allow for independent control of the total and relative charge density of two-component fractional quantum Hall (FQH) states. In particular, a recent experiment on bilayer graphene (BLG) observed a continuous transition between a compressible and incompressible phase at total filling ν_{T}=1/2 as charge is transferred between the layers, with the remarkable property that the incompressible phase has a finite interlayer polarizability. We argue that this occurs because the topological order of ν_{T}=1/2 systems supports a novel type of interlayer exciton that carries Fermi statistics. If the fermionic excitons are lower in energy than the conventional bosonic excitons (i.e., electron-hole pairs), they can form an emergent neutral Fermi surface, providing a possible explanation of an incompressible yet polarizable state at ν_{T}=1/2. We perform exact diagonalization studies that demonstrate that fermionic excitons are indeed lower in energy than bosonic excitons. This suggests that a "topological exciton metal" hidden inside a FQH insulator may have been realized experimentally in BLG. We discuss several detection schemes by which the topological exciton metal can be experimentally probed.

Light-Induced Fractional Quantum Hall Phases in Graphene

We show how to realize two-component fractional quantum Hall phases in monolayer graphene by optically driving the system. A laser is tuned into resonance between two Landau levels, giving rise to an effective tunneling between these two synthetic layers. Remarkably, because of this coupling, the interlayer interaction at nonzero relative angular momentum can become dominant, resembling a hollow-core pseudopotential. In the weak tunneling regime, this interaction favors the formation of singlet states, as we explicitly show by numerical diagonalization, at fillings ν=1/2 and ν=2/3. We discuss possible candidate phases, including the Haldane-Rezayi phase, the interlayer Pfaffian phase, and a Fibonacci phase. This demonstrates that our method may pave the way towards the realization of non-Abelian phases, as well as the control of topological phase transitions, in graphene quantum Hall systems using optical fields and integrated photonic structures.

Geometric Resonance of Composite Fermions near Bilayer Quantum Hall States

Via the application of a parallel magnetic field, we induce a single-layer to bilayer transition in two-dimensional electron systems confined to wide GaAs quantum wells and study the geometric resonance of composite fermions (CFs) with a periodic density modulation in our samples. The measurements reveal that CFs exist close to bilayer quantum Hall states, formed at Landau level filling factors ν=1 and 1/2. Near ν=1, the geometric resonance features are consistent with half the total electron density in the bilayer system, implying that CFs prefer to stay in separate layers and exhibit a two-component behavior. In contrast, close to ν=1/2, CFs appear single-layer-like (single component) as their resonance features correspond to the total density.

Observation of an Anisotropic Wigner Crystal

We report a new correlated phase of two-dimensional charged carriers in high magnetic fields, manifested by an anisotropic insulating behavior at low temperatures. It appears in a large range of low Landau level fillings 1/3≲ν≲2/3 in hole systems confined to wide GaAs quantum wells when the sample is tilted in magnetic field to an intermediate angle. The parallel field component (B_{∥}) leads to a crossing of the lowest two Landau levels, and an elongated hole wave function in the direction of B_{∥}. Under these conditions, the in-plane resistance exhibits an insulating behavior, with the resistance along B_{∥} about 10 times smaller than the resistance perpendicular to B_{∥}. We interpret this anisotropic insulating phase as a two-component, striped Wigner crystal.

Microwave spectroscopy of the low-filling-factor bilayer electron solid in a wide quantum well

At the low Landau filling factor termination of the fractional quantum Hall effect series, two-dimensional electron systems exhibit an insulating phase that is understood as a form of pinned Wigner solid. Here we use microwave spectroscopy to probe the transition to the insulator for a wide quantum well sample that can support single-layer or bilayer states depending on its overall carrier density. We find that the insulator exhibits a resonance which is characteristic of a bilayer solid. The resonance also reveals a pair of transitions within the solid, which are not accessible to dc transport measurements. As density is biased deeper into the bilayer solid regime, the resonance grows in specific intensity, and the transitions within the insulator disappear. These behaviours are suggestive of a picture of the insulating phase as an emulsion of liquid and solid components.

In 2D electron gases, insulating behaviour at low fractional quantum Hall filling factors is understood by the formation of an electronic Wigner solid. Here, the authors use microwave spectroscopy to evidence an electron liquid–solid mixed phase in bilayer states of GaAs/AlGaAs wide quantum wells.

Fibonacci anyons from Abelian bilayer quantum Hall states

The possibility of realizing non-Abelian statistics and utilizing it for topological quantum computation (TQC) has generated widespread interest. However, the non-Abelian statistics that can be realized in most accessible proposals is not powerful enough for universal TQC. In this Letter, we consider a simple bilayer fractional quantum Hall system with the 1/3 Laughlin state in each layer. We show that interlayer tunneling can drive a transition to an exotic non-Abelian state that contains the famous "Fibonacci" anyon, whose non-Abelian statistics is powerful enough for universal TQC. Our analysis rests on startling agreements from a variety of distinct methods, including thin torus limits, effective field theories, and coupled wire constructions. We provide evidence that the transition can be continuous, at which point the charge gap remains open while the neutral gap closes. This raises the question of whether these exotic phases may have already been realized at ν=2/3 in bilayers, as past experiments may not have definitively ruled them out.

Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

Fractional quantum Hall effect at ν=1/2 in hole systems confined to GaAs quantum wells

We observe the fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor ν=1/2 in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayerlike charge distributions. The ν=1/2 FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole ν=1/2 FQHE to be consistent with a two-component, Halperin-Laughlin (Ψ331) state.

Observation of reentrant integer quantum Hall states in the lowest Landau level

Measurements on very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal a close competition between the electron liquid and solid phases near the Landau level filling factor ν=1. As the density is raised, the fractional quantum Hall liquid at ν=4/5 suddenly disappears at a well-width dependent critical density, and then reappears at higher densities with insulating phases on its flanks. These insulating phases exhibit reentrant ν=1 integer quantum Hall effects and signal the formation of electron Wigner crystal states. Qualitatively similar phenomena are seen near ν=6/5.

Evolution of the 7/2 fractional quantum Hall state in two-subband systems

We report the evolution of the fractional quantum Hall state (FQHS) at a total Landau level (LL) filling factor of ν=7/2 in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt angle, or symmetry of the charge distribution. At intermediate tilt angles, for example, we observe a strengthening of the ν=7/2 FQHS. Moreover, in a well with asymmetric change distribution, there is a developing FQHS when the LL filling factor of the symmetric subband ν(S) equals 5/2 while the antisymmetric subband has a filling factor of 1<ν(A)<2.

Anomalous robustness of the ν=5/2 fractional quantum Hall state near a sharp phase boundary

We report magnetotransport measurements in wide GaAs quantum wells with a tunable density to probe the stability of the fractional quantum Hall effect at a filling factor of ν=5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy (E(F)) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once E(F) moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.

Fractional quantum Hall effect at high fillings in a two-subband electron system

Magnetotransport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν=5/2 and 7/2 fillings; instead, the observed states are at ν=[i+p/(2p±1)], where i=2, 3, 4 and p=1, 2, 3, and include several new states at ν=13/5, 17/5, 18/5, 25/7, and 14/3.

Anyon condensation and continuous topological phase transitions in non-Abelian fractional quantum Hall states

We find a series of possible continuous quantum phase transitions between fractional quantum Hall states at the same filling fraction in two-component quantum Hall systems. These can be driven by tuning the interlayer tunneling and/or interlayer repulsion. One side of the transition is the Halperin (p,p,p-3) Abelian two-component state, while the other side is the non-Abelian Z4 parafermion (Read-Rezayi) state. We predict that the transition is a continuous transition in the 3D Ising class. The critical point is described by a Z2 gauged Ginzburg-Landau theory. These results have implications for experiments on two-component systems at ν=2/3 and single-component systems at ν=8/3.

Fractional quantum Hall state at nu=5/2 and the Moore-Read pfaffian

Using exact diagonalization we show that the spin-polarized Coulomb ground state at nu=5/2 is adiabatically connected with the Moore-Read wave function for systems with up to 18 electrons on the surface of a sphere. The ground state is protected by a large gap for all system sizes studied. Furthermore, varying the Haldane pseudopotentials v{1} and v{3}, keeping all others at their value for the Coulomb interaction, energy gap and overlap between ground- and Moore-Read state form hills whose positions and extent in the (v{1},v{3}) plane coincide. We conclude that the physics of the Coulomb ground state at nu=5/2 is captured by the Moore-Read state. Such an adiabatic connection is not found at nu=1/2, unless the width of the interface wave function or Landau level mixing effects are large enough. Yet, a Moore-Read-phase at nu=1/2 appears unlikely in the thermodynamic limit.

Interlayer coherent composite Fermi liquid phase in quantum Hall bilayers

We introduce an interlayer coherent composite Fermi liquid for nu = 1/2 + 1/2 bilayers, in which interlayer Coulomb repulsion drives exciton condensation of composite fermions. As a result, composite fermions propagate coherently between layers--even though electrons do not--and form bonding and antibonding Fermi seas. This phase is compressible with respect to symmetric currents but quantum Hall-like in the counterflow channel. Quantum oscillations of the composite Fermi seas generate a new series of incompressible states at nu = p/[2(p +/- 1)] per layer (p an integer), which is a bilayer analogue of Jain's sequence.

Evidence for developing fractional quantum Hall states at even denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells

We report the observation of developing fractional quantum Hall states at Landau level filling factors nu = 1/2 and 1/4 in electron systems confined to wide GaAs quantum wells with significantly asymmetric charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wave function.

Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry

Magnetotransport measurements on electrons confined to a 57-nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings (nu) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of 1.93 x 10;{11} cm;{-2}, a developing fractional quantum Hall state is observed at the even-denominator filling nu = 1/4 when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the nu = 1/5 fractional quantum Hall state.

Observation of a fractional quantum hall state at nu = 1/4 in a wide GaAs quantum well

We report the observation of an even-denominator fractional quantum Hall state at nu = 1/4 in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of n(e) = 2.55 x 10(11) cm(-2). We have performed transport measurements at T - 35 mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at nu = 1/4. Upon tilting the sample to an angle of theta = 20.3 degrees a clear fractional quantum Hall state emerges at nu = 1/4 with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.

Pinning modes and interlayer correlation in high-magnetic-field bilayer Wigner solids

We report studies of pinning mode resonances in the low total Landau filling (nu) Wigner solid of a series of bilayer hole samples with negligible interlayer tunneling and with varying interlayer separation d. Comparison of states with equal layer densities (p,p) to single layer states (p,0) produced in situ by biasing, indicates that there is interlayer quantum correlation in the solid at small d. Also, the resonance frequency at small d is decreased just near nu = 1/2 and 2/3, indicating the importance in the solid of correlations related to those in the fractional quantum Hall effects.

Realization of an interacting two-valley AlAs bilayer system

By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g factors. Since the occupied valleys are at different X points of the Brillouin zone, the interlayer tunneling is negligibly small despite the close electron layer spacing. We demonstrate the realization of this system via magnetotransport measurements and the observation of a phase-coherent, bilayer nu=1 quantum Hall state flanked by a reentrant insulating phase.

Role of density imbalance in an interacting bilayer hole system

We study interacting GaAs hole bilayers in the limit of zero interlayer tunneling. When the layers have equal density, we observe a phase-coherent bilayer quantum Hall state (QHS) at a total filling factor nu=1, flanked by a reentrant insulating phase at nearby fillings which suggests the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the phase-coherent QHS becomes stronger, evincing its robustness against charge imbalance, but the insulating phase disappears, suggesting that its stability requires the commensurability of the two layers.