Non-Arrhenius reorientation kinetics for the B-H complex in Si: Evidence for thermally assisted tunneling

Recent Developments in Dispersive Kinetics

In general, chemical reactions proceeding on time scales comparable to, or shorter than, those of internal rearrangements in a reaction system renewing the environment of the reactants (mixing), are dispersive. For dispersive kinetics, as for dispersive transport and dispersive relaxation, many time scales coexist. The rate coefficients for dispersive processes depend on time. For a time-dependent specific reaction rate, using the concept of energy profile along the reaction path, one finds the potential energy barrier separating reactants from products to evolve in time during the course of reaction. The evolution of the energy barrier during the course of reaction is described in terms of energy distribution functions related directly to the distribution function of logarithms of lifetimes calculable from kinetic equations with a time-dependent specific reaction rate. This phenomenological approach is compared with that in which the kinetic equations with time-dependent specific reaction rates are interpreted in terms of the superposition of classical reaction patterns. Special attention is paid to renor-malization of rate coefficients following from the stochastic theory of renewals (structural relaxation) in the reaction system. This phenomenological approach to kinetics is taken as a convenient basis to present a number of comprehensive models of dispersive kinetics developed in the 1990s and to discuss some recently published experimental data to show what one derives directly from experimental data and what the detailed mechanistic models have to account for to be acceptable.

Reorientation kinetics of hydroxyl groups in anatase TiO2

The reorientation kinetics of hydrogen in a variety of complexes in the anatase polymorph of TiO₂ was investigated by means of stress-induced dichroism. For the hydrogen-defect resulting in an O-H vibrational mode with a frequency of 3389 cm^-1, the energy barrier separating adjacent equivalent in-plane sites of hydrogen was determined to be independent of the isotope and equal to 0.74 ± 0.02 eV, whereas the attempt frequency was found to be (1.10 ± 0.20) × 10¹² and (0.75 ± 0.15) × 10¹² s^-1 for hydrogen and deuterium, respectively. The defect with vibrational modes at 3412 and 3417 cm^-1 previously assigned to isolated hydrogen did not reveal alignment under the stress up to room temperature, which indicates that the barrier of hydrogen motion is above 0.9 eV.

Hydrogen motion in rutile TiO2

Uniaxial-stress experiments have been performed for the 3287- and 2445-cm-1 local vibrational modes assigned to the positive charge state of interstitial hydrogen [Formula: see text] and deuterium [Formula: see text], respectively, occurring in mono-crystalline rutile TiO2. The onset of the defect alignment under the stress applied perpendicular to the [001] axis is detected at 165 K (185 K), which corresponds to the activation energy of 0.53 eV (0.58 eV) for interstitial hydrogen (deuterium). Based on these findings the diffusion constants of [Formula: see text] and [Formula: see text] along the [001] axis of TiO2 are determined. The experimental data are complemented by density-functional theory calculations and compared with the earlier results on the diffusion of [Formula: see text]/[Formula: see text] at elevated temperatures up to 700 °C. It is found that the activation energy value deduced from our low-temperature stress measurements yields a very good agreement with the high-temperature data, covering a dynamic range of 12 orders of magnitude.

Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen

The detailed dynamics of the positively charged muonium (Mu+) in heavily doped p-type Si:B is reported. Below 200 K, Mu+ is static and isolated, and is located in a stretched Si-Si bond. Above approximately 200 K, Mu+ diffuses incoherently. At temperatures higher than 300 K, the Mu+-B- complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu+ in Si compared to H+ and D+-this is attributed to its smaller mass.