Spiral State and Giant Magnetoresistance in Perovskite Mn Oxides

Giant and negative magnetoresistances in conical magnets in the nonequilibrium Boltzmann equation approach

We study magnetotransport in conical helimagnet crystals using the nonequilibriun Boltzmann equation approach. Spin dependent magnetoresistance exhibits dramatic properties for high and low electron concentrations at different temperatures. For spin up electrons we find negative magnetoresistance despite only considering a single carrier type. For spin down electrons we observe giant magnetoresistance due to depletion of spin down electrons with an applied magnetic field. For spin up carriers, the magnetoresistance is negative, due to the increase in charge carriers with a magnetic field. In addition, we investigate the spin dependent Hall effect. If a magnetic field reaches some critical value for spin down electrons, giant Hall resistance occurs, i.e. Hall current vanishes. This effect is explained by the absence of spin down carriers. For spin up carriers, the Hall constant dramatically decreases with field, due to the increase in spin up electron density. Because of the giant spin dependent magnetoresistance and Hall resistivity, conical helimagnets could be useful in spin switching devices.

Controlling phase transition in monolayer metal diiodides XI2(X: Fe, Co, and Ni) by carrier doping

We applied the generalized Bloch theorem to verify the ground state (most stable state) in monolayer metal diiodides 1T-XI₂(X: Fe, Co, and Ni), a family of metal dihalides, using the first-principles calculations. The ground state, which can be ferromagnetic, antiferromagnetic, or spiral state, was specified by a wavevector in the primitive unit cell. While the ground state of FeI₂is ferromagnetic, the spiral state becomes the ground state for CoI₂and NiI₂. Since the multiferroic behavior in the metal dihalide can be preserved by the spiral structure, we believe that CoI₂and NiI₂are promising multiferroic materials in the most stable state. When the lattice parameter increases, we also show that the ground state of NiI₂changes to a ferromagnetic state while others still keep their initial ground states. For the last discussion, we revealed the phase transition manipulated by the hole-electron doping due to the spin-spin competition between the ferromagnetic superexchange and the antiferromagnetic direct exchange. These results convince us that metal diiodides have many benefits for future spintronic devices.

Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure

Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk properties. Here, by utilizing tunneling anisotropic magnetoresistance in a single-barrier heterostructure composed of La0.6Sr0.4MnO3 (LSMO)/LaAlO3 (LAO)/Nb-doped SrTiO3 (001), we reveal the presence of a peculiar strong two-fold magnetic anisotropy (MA) along the [110]c direction at the LSMO/LAO interface, which is not observed in bulk LSMO. This MA shows unknown behavior that the easy magnetization axis rotates by 90° at an energy of 0.2 eV below the Fermi level in LSMO. We attribute this phenomenon to the transition between the e g and t 2g bands at the LSMO interface. Our finding and approach to understanding the energy dependence of the MA demonstrate a new possibility of efficient control of the interfacial magnetic properties by controlling the band structures of oxide heterostructures.

Double resonance mechanism of ferromagnetism and magnetotransport in (Ga-Mn)As

We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant and nonbonding states, is the origin of the ferromagnetism of (Ga-Mn)As. The mechanism is thus called "double resonance." The resonant states bring about the spin-dependent resistivity to produce magnetoresistive properties in (Ga-Mn)As and their junctions.

SPIN-DEPENDENT TRANSPORT AND LOW-FIELD MAGNETORESISTANCE IN DOPED MANGANITES

▪ Abstract  Doped manganite perovskites exhibit large magnetoresistance, but usually only in high fields (>1 Tesla). Efforts are under way to understand the underlying mechanism and to explore possibilities of achieving large magnetoresistance at low fields, which has led to focused studies of spin-dependent transport across macroscopic interfaces between manganites. We review recent experimental progress in this area.