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For: Hoshino T, Kokubun K, Fujiwara H, Kumamoto K, Ishimaru T, Ohdomari I. Critical domain size of the 7 x 7 structure for nucleation and growth on Si(111) quenched surfaces. Phys Rev Lett 1995;75:2372-2375. [PMID: 10059287 DOI: 10.1103/physrevlett.75.2372] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Number Cited by Other Article(s)
1
Tomioka K, Fukui T. III–V Semiconductor Nanowires on Si by Selective-Area Metal-Organic Vapor Phase Epitaxy. SEMICONDUCTOR NANOSTRUCTURES FOR OPTOELECTRONIC DEVICES 2012. [DOI: 10.1007/978-3-642-22480-5_3] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
2
Xu YC, Liu BG. Two-speed phase dynamics in the si(111) (7 x7)-(1 x 1) phase transition. PHYSICAL REVIEW LETTERS 2008;100:056103. [PMID: 18352395 DOI: 10.1103/physrevlett.100.056103] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2007] [Indexed: 05/26/2023]
3
Hannon JB, Tersoff J, Tromp RM. Surface stress and thermodynamic nanoscale size selection. Science 2002;295:299-301. [PMID: 11786636 DOI: 10.1126/science.1066420] [Citation(s) in RCA: 46] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
4
Observations of sudden structural-changes of the faulted-halves of the DAS structure on quenched Si(1 1 1) by STM. Ultramicroscopy 2000;82:103-9. [PMID: 10741658 DOI: 10.1016/s0304-3991(99)00131-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
5
Kumamoto K, Hoshino T, Kokubun K, Ishimaru T, Ohdomari I. Dynamic growth steps of n x n dimer-adatom-stacking-fault domains on the quenched Si(111) surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:12907-12911. [PMID: 9982964 DOI: 10.1103/physrevb.53.12907] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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