Electron delocalization in alpha -nitrogen

Spectroscopic observation of nitrogen anions N(-) in solid matrices

Analysis of old and recent experiments on thermoluminescence of cryocrystals and nanoclusters of N2, Ne, Ar, and Kr containing stabilized nitrogen atoms, suggests that the so-called γ-line may correspond to the bound-bound transition (1)D-(3)P of nitrogen anions N(-) formed in solids by the association of delocalized electrons and metastable nitrogen atoms N((2)D). The recent observations of the γ-line were accompanied by simultaneous luminescence of metastable nitrogen N((2)D) atoms and exoelectron emission. The fine structure of the γ-line at 793 nm has been experimentally observed and investigated for the first time.

Influence of impurities on short range electron transport in GaAs

The influence of Cr impurities on muonium atom formation in GaAs has been studied using muon spin relaxation techniques with alternating electric fields. The results suggest that electron transport to and capture by the muon is suppressed by capture/scattering on intervening Cr centers. The length scale involved is estimated to be about 3x10(-6) cm. This offers an opportunity to study electron transport to positive centers in semiconductors on a microscopic scale.

Electron localization in a disordered insulating host

Transport of excess electrons has been studied in solid N2-Ar mixtures between 5 and 60 K using muon spin rotation in magnetic and electric fields. At low temperatures, orientational frustration of N2 molecular quadrupoles by a sufficiently high concentration of Ar atoms leads to formation of a quadrupolar glass phase in which electrons are found to be strongly localized. This feature is in marked contrast to the electron delocalization observed in the low-temperature alpha phase of pure solid nitrogen, which shows long-range orientational order.