Finite-Temperature Fermi-Edge Singularity in Tunneling Studied Using Random Telegraph Signals

Hopping conduction and random telegraph signal in an exfoliated multilayer MoS2 field-effect transistor

We investigate the hopping conduction and random telegraph signal caused by various species of interface charge scatterers in a MoS₂ multilayer field-effect transistor. The temperature dependence of the channel resistivity shows that at low temperatures and low carrier densities the carrier transport is via Mott variable range hopping with a hopping length changing from 41 to 80 nm. The hopping conduction was due to electron tunneling through localized band tail states formed by the scatterers located in the vicinity of the MoS₂ layer. In the temperature range of 40-70 K, we observed random telegraph signal (RTS) that is caused by the capture and emission of a carrier by the interface traps that are located away from the layer. These traps form strong potential that interact with the layer and change the potential profile of the electron system. The characteristics of RTS depend strongly on gate bias and temperature, as well as the application of a magnetic field.

Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity

The interaction between the Fermi sea of conduction electrons and a nonadiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude ≈e(2)/h at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.

Fermi-edge singularity in the vicinity of the resonant scattering condition

Fermi-edge absorption theory predicting the spectrum A(ω) ∝ ω(-2δ(0)/π+δ(0)92)/π2) relies on the assumption that scattering phase δ(0) is frequency independent. The dependence of δ(0) on ω becomes crucial near the resonant condition, where the phase changes abruptly by π. In this limit, because of the finite time spent by electron on a resonant level, the scattering is dynamic. We incorporate the finite time delay into the theory, solve the Dyson equation with a modified kernel, and find that, near the resonance, A(ω) behaves as ω(-3/4)|lnω|. Scattering off the core hole becomes resonant in 1D and 2D in the presence of an empty subband above the Fermi level; then a deep hole splits off a level from the bottom of this subband. Fermi-edge absorption in the regime when resonant level transforms into a Kondo peak is discussed.

Gradient catastrophe and Fermi-edge resonances in Fermi gas

Any smooth spatial disturbance of a degenerate Fermi gas inevitably becomes sharp. This phenomenon, called the gradient catastrophe, causes the breakdown of a Fermi sea to multiconnected components characterized by multiple Fermi points. We argue that the gradient catastrophe can be probed through a Fermi-edge singularity measurement. In the regime of the gradient catastrophe the Fermi-edge singularity problem becomes a nonequilibrium and nonstationary phenomenon. We show that the gradient catastrophe transforms the single-peaked Fermi-edge singularity of the tunneling (or absorption) spectrum to a sequence of multiple asymmetric singular resonances. An extension of the bosonic representation of the electronic operator to nonequilibrium states captures the singular behavior of the resonances.

Electrical current switching in single CdSe nanorods

Electrical current measurements through individually wired colloidal CdSe nanorods exhibit pronounced multistability. This current switching is analogous to the widely observed fluorescence intermittency in similar systems and may be associated with surface charge dynamics. Such association is quantitatively established for the case when the current is bistable, where the probability of the sojourn time t at the high or low current state follows an exponential dependence. Remarkably, this behavior can be modeled by charging dynamics of a single surface trap, whose position could be estimated from the intermittent current-voltage characteristics. The methodology presented here provides a unique route for charge dynamic sensing at the nanoscale, where the nanorod senses its own surface charge.

Correlated random telegraph signal and low-frequency noise in carbon nanotube transistors

A correlated random telegraph signal is observed from the interaction of two individual defects in a carbon nanotube transistor. It is shown that the amplitude fluctuation of one defect significantly depends on the state of the other defect. Moreover, statistics of the correlated switchings is shown to deviate from the ideal Poisson process. Physics of this random telegraph signal correlation is attributed to the fact that the two defects are located closer than the sum of their Fermi-Thomas screening lengths. This work brings new implications to the source of low frequency noise in nanodevices. Moreover, statistic studies provide a new avenue to study correlated effects due to particle interactions.

Orthogonality catastrophe and shock waves in a nonequilibrium Fermi gas

A semiclassical wave packet propagating in a dissipationless Fermi gas inevitably enters a "gradient catastrophe" regime, where an initially smooth front develops large gradients and undergoes a dramatic shock-wave phenomenon. The nonlinear effects in electronic transport are due to the curvature of the electronic spectrum at the Fermi surface. They can be probed by a sudden switching of a local potential. In equilibrium, this process produces a large number of particle-hole pairs, a phenomenon closely related to the orthogonality catastrophe. We study a generalization of this phenomenon to the nonequilibrium regime and show how the orthogonality catastrophe cures the gradient catastrophe, by providing a dispersive regularization mechanism.

Bidirectional Counting of Single Electrons

A bidirectional single-electron counting device is demonstrated. Individual electrons flowing in forward and reverse directions through a double quantum dot are detected with a quantum point contact acting as a charge sensor. A comprehensive statistical analysis in the frequency and time domains and of higher order moments of noise reveals antibunching correlation in single-electron transport through the device itself. The device can also be used to investigate current flow in the attoampere range, which cannot be measured by existing current meters.

Tunable Fermi-edge resonance in an open quantum dot

Resonant tunneling in an open mesoscopic quantum dot is proposed as a vehicle to realize a tunable Fermi-edge resonance with variable coupling strength. We solve the x-ray edge problem for a generic nonseparable scatterer and apply it to describe tunneling in a quantum dot. The tunneling current power law exponent is linked to the S matrix of the dot. The control of scattering by varying the dot shape and coupling to the leads allows us to explore a wide range of exponents. The sensitivity of mesoscopic coherence to the Wigner-Dyson ensemble symmetry is replicated in the Fermi-edge singularity.

Probing the spin state of a single electron trap by random telegraph signal

We have studied the random telegraph signal (RTS) generated by a single paramagnetic spin center adjacent to a submicrometer silicon metal-oxide-semiconductor field-effect transistor. An in-plane magnetic field induces a substantial change in the statistics of the RTS. We show that a model using the grand partition theorem can qualitatively explain the change in statistics of the RTS as a function of the applied magnetic field. While the data at high temperatures can be well described by this simple model, quantitative discrepancy increases as the temperature is lowered.