Omeltchenko A, Bachlechner ME, Nakano A, Kalia RK, Vashishta P, Ebbsjo I, Madhukar A, Messina P. Stress domains in Si(111)/a-Si3N4 nanopixel: ten-million-atom molecular dynamics simulations on parallel computers.
PHYSICAL REVIEW LETTERS 2000;
84:318-321. [PMID:
11015900 DOI:
10.1103/physrevlett.84.318]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/1998] [Revised: 07/14/1999] [Indexed: 05/23/2023]
Abstract
Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si(3)N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the interface. In silicon below the interface, for a 25 nm square mesa stress domains with triangular symmetry are observed, whereas for a rectangular, 54 nmx33 nm, mesa tensile stress domains ( approximately 300 A) are separated by Y-shaped compressive domain wall. Maximum stresses in the domains and domain walls are -2 GPa and +2 GPa, respectively.
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