Diffusion and charge dynamics of negatively charged muonium in n-type GaAs

Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen

The detailed dynamics of the positively charged muonium (Mu+) in heavily doped p-type Si:B is reported. Below 200 K, Mu+ is static and isolated, and is located in a stretched Si-Si bond. Above approximately 200 K, Mu+ diffuses incoherently. At temperatures higher than 300 K, the Mu+-B- complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu+ in Si compared to H+ and D+-this is attributed to its smaller mass.

Local structure of isolated positively charged muonium as an analog for the hydrogen ion in p-type GaAs

We determine the local structure of isolated positively charged muonium (Mu+) in heavily doped p-type GaAs based on muon level crossing resonance and zero applied field muon spin depolarization data. These measurements provide the first direct experimental confirmation that Mu+, and by analogy H+, is located within a stretched Ga-As bond. The distances between Mu+ and the nearest neighbor Ga and As atoms are estimated to be 1.83 +/- 0.10 A; and 1.76 +/- 0.10 A, respectively. These results are compared to existing theoretical calculations on the structure of hydrogen in GaAs and additionally provide data on the induced electric field gradients.

Muonium analog of hydrogen passivation: observation of the Mu+-Zn- reaction in GaAs

We report direct detection of the formation and subsequent breakup of a complex containing positively charged muonium ( Mu+) and a substitutional Zn(Ga) acceptor in heavily doped p-type GaAs:Zn. Mu+ diffuses above 200 K with a hop rate nu = nu(0)e(-E(nu)/k(B)T) where nu(0) = (7.7+/-2.0)x10(8) s(-1) and E(nu) = 0.15(4) eV. Above 350 K, it forms the complex with a trapping radius of 500+/-200 A. The Mu-Zn complex breaks up above 550 K with a dissociation energy of 0.88(7) eV and prefactor of (5+/-4)x10(12) s(-1). Above 750 K, the cyclic reaction Mu+<--> Mu0 takes place.

Muon spin relaxation studies of interstitial and molecular motion

The unusual methods of preparation and analysis of spin polarization in muSR spectroscopy, which exploit the unique properties of the positive muon, are introduced in this article. Following a summary overview of applications, particular attention is paid to the problem of spin-lattice relaxation for a muon experiencing a hyperfine interaction with a single unpaired electron. The specific cases considered are the interstitial diffusion of muonium--the 1-electron atom which may be considered as a light isotope of hydrogen-and the molecular dynamics of organic radicals labelled by muonium. Rate equations for the evolution of population in the hyperfine-coupled spin states are solved numerically for various relaxation mechanisms. The formalism is equally valid for conventional ESR studies of paramagnetic states but is pursued specifically to simulate T1-relaxation in muSR. The simulations are compared with literature data. Also treated is the case of intermittent hyperfine coupling, appropriate to electron capture and loss in semiconductors or soliton motion in polymers; for this, a Monte Carlo approach is used to simulate the muon response. (For low-dimensional motion, the relaxation function is not exponential, so that a unique value of T1 cannot be defined.) Finally, a proposal is made to implement muon-T1 measurements in the rotating frame; this is designed for the selective study of electronically diamagnetic muonium states (i.e., those without hyperfine coupling) in the presence of a paramagnetic muonium or radical fraction.