Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors

Imprinting Spatial Helicity Structure of Vector Vortex Beam on Spin Texture in Semiconductors

We present the transfer of the spatially variant polarization of topologically structured light to the spatial spin texture in a semiconductor quantum well. The electron spin texture, which is a circular pattern with repeating spin-up and spin-down states whose repetition rate is determined by the topological charge, is directly excited by a vector vortex beam with a spatial helicity structure. The generated spin texture efficiently evolves into a helical spin wave pattern owing to the spin-orbit effective magnetic fields in the persistent spin helix state by controlling the spatial wave number of the excited spin mode. By tuning the repetition length and azimuthal angle, we simultaneously generate helical spin waves with opposite phases by a single beam.

A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning Excitation

A new simple method is proposed to extract the ambipolar diffusion length for two-dimensional (2D) electronic transport in thin film structures using a scanning photoluminescence microscopy (SPLM) setup. No spatially-resolved photoluminescence detection methods are required. By measuring the excitation-position-dependent PL intensity across the edge of a semiconductor, ambipolar diffusion length can be extracted from the SPLM profile through a simple analytic fitting function. Numerical simulation was first used to verify the fitting method. Then the fitting method was applied to extract the ambipolar diffusion length from the measured SPLM profile of a GaAs thin film structure. Carrier lifetime was obtained in an accompanying time-resolved photoluminescence measurement under the same excitation condition, and thus the ambipolar diffusion coefficient can be determined simultaneously. The new fitting method provides a simple way to evaluate carrier transport properties in 2D electronic transport structures such as thin films or quantum wells.

Distinguishing the inverse spin Hall effect photocurrent of electrons and holes by comparing to the classical Hall effect

The photo-excited electrons and holes move in the same direction in the diffusion and in the opposite direction in the drift under an electric field. Therefore, the contribution to the inverse spin Hall current of photo-excited electrons and holes in the diffusion regime is different to that in the drift regime under electric field. By comparing the classical Hall effect with the inverse spin Hall effect in both diffusion and drift regime, we develop an optical method to distinguish the contributions of electrons and holes in the inverse spin Hall effect. It is found that the contribution of the inverse spin Hall effect of electrons and holes in an InGaAs/AlGaAs un-doped multiple quantum well is approximately equal at room temperature.

Spatiotemporal Spin Noise Spectroscopy

We report on the potential of a new spin noise spectroscopy approach by demonstrating all-optical probing of spatiotemporal spin fluctuations. This is achieved by homodyne mixing of a spatially phase-modulated local oscillator with spin-flip scattered light, from which the frequency and wave vector dependence of the spin noise power is unveiled. As a first application of the method we measure the spatiotemporal spin noise in weakly n-doped CdTe layers, from which the electron spin diffusion constant and spin relaxation rates are determined. The absence of spatial spin correlations is also shown for this particular system.

Four-wave-mixing experiments with seeded free electron lasers

The development of free electron laser (FEL) sources has provided an unprecedented bridge between the scientific communities working with ultrafast lasers and extreme ultraviolet (XUV) and X-ray radiation. Indeed, in recent years an increasing number of FEL-based applications have exploited methods and concepts typical of advanced optical approaches. In this context, we recently used a seeded FEL to demonstrate a four-wave-mixing (FWM) process stimulated by coherent XUV radiation, namely the XUV transient grating (X-TG). We hereby report on X-TG measurements carried out on a sample of silicon nitride (Si₃N₄). The recorded data bears evidence for two distinct signal decay mechanisms: one occurring on a sub-ps timescale and one following slower dynamics extending throughout and beyond the probed timescale range (100 ps). The latter is compatible with a slower relaxation (time decay > ns), that may be interpreted as the signature of thermal diffusion modes. From the peak intensity of the X-TG signal we could estimate a value of the effective third-order susceptibility which is substantially larger than that found in SiO₂, so far the only sample with available X-TG data. Furthermore, the intensity of the time-coincidence peak shows a linear dependence on the intensity of the three input beams, indicating that the measurements were performed in the weak field regime. However, the timescale of the ultrafast relaxation exhibits a dependence on the intensity of the XUV radiation. We interpreted the observed behaviour as the generation of a population grating of free-electrons and holes that, on the sub-ps timescale, relaxes to generate lattice excitations. The background free detection inherent to the X-TG approach allowed the determination of FEL-induced electron dynamics with a sensitivity largely exceeding that of transient reflectivity and transmissivity measurements, usually employed for this purpose.

Circular dichroism measurements at an x-ray free-electron laser with polarization control

A non-destructive diagnostic method for the characterization of circularly polarized, ultraintense, short wavelength free-electron laser (FEL) light is presented. The recently installed Delta undulator at the LCLS (Linac Coherent Light Source) at SLAC National Accelerator Laboratory (USA) was used as showcase for this diagnostic scheme. By applying a combined two-color, multi-photon experiment with polarization control, the degree of circular polarization of the Delta undulator has been determined. Towards this goal, an oriented electronic state in the continuum was created by non-resonant ionization of the O2 1s core shell with circularly polarized FEL pulses at hν ≃ 700 eV. An also circularly polarized, highly intense UV laser pulse with hν ≃ 3.1 eV was temporally and spatially overlapped, causing the photoelectrons to redistribute into so-called sidebands that are energetically separated by the photon energy of the UV laser. By determining the circular dichroism of these redistributed electrons using angle resolving electron spectroscopy and modeling the results with the strong-field approximation, this scheme allows to unambiguously determine the absolute degree of circular polarization of any pulsed, ultraintense XUV or X-ray laser source.

Current-Controlled Spin Precession of Quasistationary Electrons in a Cubic Spin-Orbit Field

Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in the absence of an external magnetic field. The frequency depends linearly on the drift velocity and is explained by the cubic Dresselhaus spin-orbit interaction, for which drift leads to a spin precession angle twice that of spins that diffuse the same distance.

Experimental setups for FEL-based four-wave mixing experiments at FERMI

The recent advent of free-electron laser (FEL) sources is driving the scientific community to extend table-top laser research to shorter wavelengths adding elemental selectivity and chemical state specificity. Both a compact setup (mini-TIMER) and a separate instrument (EIS-TIMER) dedicated to four-wave-mixing (FWM) experiments has been designed and constructed, to be operated as a branch of the Elastic and Inelastic Scattering beamline: EIS. The FWM experiments that are planned at EIS-TIMER are based on the transient grating approach, where two crossed FEL pulses create a controlled modulation of the sample excitations while a third time-delayed pulse is used to monitor the dynamics of the excited state. This manuscript describes such experimental facilities, showing the preliminary results of the commissioning of the EIS-TIMER beamline, and discusses original experimental strategies being developed to study the dynamics of matter at the fs–nm time–length scales. In the near future such experimental tools will allow more sophisticated FEL-based FWM applications, that also include the use of multiple and multi-color FEL pulses.

Far-from-equilibrium spin transport in Heisenberg quantum magnets

We study experimentally the far-from-equilibrium dynamics in ferromagnetic Heisenberg quantum magnets realized with ultracold atoms in an optical lattice. After controlled imprinting of a spin spiral pattern with an adjustable wave vector, we measure the decay of the initial spin correlations through single-site resolved detection. On the experimentally accessible time scale of several exchange times, we find a profound dependence of the decay rate on the wave vector. In one-dimensional systems, we observe diffusionlike spin transport with a dimensionless diffusion coefficient of 0.22(1). We show how this behavior emerges from the microscopic properties of the closed quantum system. In contrast to the one-dimensional case, our transport measurements for two-dimensional Heisenberg systems indicate anomalous superdiffusion.

Gate control of the electron spin-diffusion length in semiconductor quantum wells

The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length could be of great importance for the operation of devices based on the electric field manipulation and transport of electron spin. Here we demonstrate that the spin diffusion length in a GaAs quantum well can be electrically controlled. Through the measurement of the spin diffusion coefficient by spin grating spectroscopy and of the spin relaxation time by time-resolved optical orientation experiments, we show that the diffusion length can be increased by more than 200% with an applied gate voltage of 5 V. These experiments allow at the same time the direct simultaneous measurements of both the Rashba and Dresselhaus spin-orbit splittings.

Collective spin Hall effect for electron-hole gratings

We show that an electric field parallel to the wave fronts of an electron-hole grating in a GaAs quantum well generates, via the electronic spin Hall effect, a spin grating of the same wave vector and with an amplitude that can exceed 1% of the amplitude of the initial density grating. We refer to this phenomenon as the "collective spin Hall effect." A detailed study of the coupled spin-charge dynamics for quantum wells grown in different directions reveals rich features in the time evolution of the induced spin density, including the possibility of generating a helical spin grating.

Interacting drift-diffusion theory for photoexcited electron-hole gratings in semiconductor quantum wells

Phase-resolved transient grating spectroscopy in semiconductor quantum wells has been shown to be a powerful technique for measuring the electron-hole drag resistivity ρ(eh), which depends on the Coulomb interaction between the carriers. In this Letter we develop the interacting drift-diffusion theory, from which ρ(eh) can be determined, given the measured mobility of an electron-hole grating. From this theory we predict a crossover from a high-excitation-density regime, in which the mobility has the "normal" positive value, to a low-density regime, in which Coulomb drag dominates and the mobility becomes negative. At the crossover point, the mobility of the grating vanishes.

Coherent propagation of spin helices in a quantum-well confined electron gas

We use phase-resolved transient grating spectroscopy to measure the propagation of spin helices in a high mobility n-GaAs/AlGaAs quantum well with an applied in-plane electric field. At relatively low fields helical modes crossover from overdamped excitations where the spin-precession period exceeds the spin lifetime, to a regime of coherent propagation where several spin-precession periods can be observed. We demonstrate that the envelope of a spin polarization packet reaches a current-driven velocity of 10(7) cm s(-1) in an applied field of 70 V cm(-1).

Transmission-grating-photomasked transient spin grating and its application to measurement of electron-spin ambipolar diffusion in (110) GaAs quantum wells

A circular dichromatic transient absorption difference spectroscopy of transmission-grating-photomasked transient spin grating is developed and formularized. It is very simple in experimental setup and operation, and has high detection sensitivity. It is applied to measure spin diffusion dynamics and excited electron density dependence of spin ambipolar diffusion coefficient in (110) GaAs quantum wells. It is found that the spin ambipolar diffusion coefficient of (110) and (001) GaAs quantum wells is close to each other, but has an opposite dependence tendency on excited electron density. This spectroscopy is expected to have extensive applicability in the measurement of spin transport.

Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient grating spectroscopy

We use phase-resolved transient grating spectroscopy to measure the drift and diffusion of electron-hole density waves in a semiconductor quantum well. The unique aspects of this optical probe allow us to determine the frictional force between a two-dimensional Fermi liquid of electrons and a dilute gas of holes. Knowledge of electron-hole friction enables prediction of ambipolar dynamics in high-mobility electron systems.

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.

Circularly polarized luminescence microscopy for the imaging of charge and spin diffusion in semiconductors

Room temperature electronic diffusion is studied in 3 μm thick epitaxial p(+) GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a contactless means to measure both the charge (L) and spin (L(s)) diffusion lengths simultaneously. The measured values of L and L(s) are in excellent agreement with the spatially averaged polarization and a sharp reduction in these two quantities (L from 21.3 to 1.2 μm and L(s) from 1.3 to 0.8 μm) is found with increasing surface recombination velocity. Outward diffusion results in a factor of 10 increase in the polarization at the excitation spot. The range of materials to which the technique can be applied, as well as a comparison with other existing methods for the measurement of spin diffusion, is discussed.

Exciton fine structure and spin relaxation in semiconductor colloidal quantum dots

Quantum dots (QDs) have discrete quantum states isolated from the environment, making QDs well suited for quantum information processing. In semiconductor QDs, the electron spins can be coherently oriented by photoexcitation using circularly polarized light, creating optical orientation. The optically induced spin orientation could serve as a unit for data storage and processing. Carrier spin orientation is also envisioned to be a key component in a related, though parallel, field of semiconductor spintronics. However, the oriented spin population rapidly loses its coherence by interaction with the environment, thereby erasing the prepared information. Since long-lasting spin orientation is desirable in both areas of investigation, spin relaxation is the central focus of investigation for optimization of device performance. In this Account, we discuss a topic peripherally related to these emerging areas of investigation: exciton fine structure relaxation (EFSR). The radiationless transition occurring in the exciton fine structure not only highlights a novel aspect of QD exciton relaxation but also has implications for carrier spin relaxation in QDs. We focus on examining the EFSR in connection with optical spin orientation and subsequent ultrafast relaxation of electron and hole spin densities in the framework of the exciton fine structure basis. Despite its significance, the study of exciton fine structure in colloidal QDs has been hampered by the experimental challenge arising from inhomogeneous line broadening that obscures the details of closely spaced fine structure states in the frequency domain. In this Account, we show that spin relaxation occurring in the fine structure of CdSe QDs can be probed by a time-domain nonlinear polarization spectroscopy, circumventing the obstacles confronted in the frequency-domain spectroscopy. In particular, by combining polarization sequences of multiple optical pulses with the unique optical selection rules of semiconductors, fast energy relaxation among the QD exciton fine structure states is selectively measured. The measured exciton fine structure relaxation, which is a nanoscale analogue of molecular radiationless transitions, contains direct information on the relaxation of spin densities of electron and hole carriers, that is, spin relaxation in QDs. From the exciton fine structure relaxation rates measured for CdSe nanorods and complex-shaped nanocrystals using nonlinear polarization spectroscopy, we elucidated the implications of QD size and shape on the QD exciton properties as well, for example, size- and shape-scaling laws governing exciton spin flips and how an exciton is delocalized in a QD. We envision that the experimental development and the discoveries of QD exciton properties presented in this Account will inspire further studies toward revealing the characteristics of QD excitons and spin relaxation therein, for example, spin relaxation in QDs made of various materials with different electronic structures, spin relaxation under an external perturbation of QD electronic states using magnetic fields, and spin relaxation of separated electrons and holes in type-II QD heterostructures.

Spin-Hall effect and spin-Coulomb drag in doped semiconductors

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.

Emergence of the persistent spin helix in semiconductor quantum wells

According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be achieved in a two-dimensional electron gas, despite the presence of spin-orbit coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix'. SU(2) is realized, in principle, when the strengths of two dominant spin-orbit interactions, the Rashba (strength parameterized by alpha) and linear Dresselhaus (beta(1)) interactions, are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (beta(3)) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as alpha approaches beta(1). Here we report experimental observation of the emergence of the persistent spin helix in GaAs quantum wells by independently tuning alpha and beta(1). Using transient spin-grating spectroscopy, we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant spin-orbit terms, identifying beta(3) as the main SU(2)-violating term in our samples. The tunable suppression of spin relaxation demonstrated in this work is well suited for application to spintronics.

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin polarization across different layers and interfaces. This complex transfer process depends on individual material properties and also, most importantly, on the structural and electronic properties of the interfaces between the different materials and defects that are common to real devices. Knowledge of these factors is especially important for the relatively new field of organic spintronics, where there is a severe lack of suitable experimental techniques that can yield depth-resolved information about the spin polarization of charge carriers within buried layers of real devices. Here, we present a new depth-resolved technique for measuring the spin polarization of current-injected electrons in an organic spin valve and find the temperature dependence of the measured spin diffusion length is correlated with the device magnetoresistance.

Nondiffusive spin dynamics in a two-dimensional electron gas

We describe measurements of spin dynamics in the two-dimensional electron gas in GaAs/GaAlAs quantum wells. Optical techniques, including transient spin-grating spectroscopy, are used to probe the relaxation rates of spin polarization waves in the wave vector range from zero to 6x10(4) cm-1. We find that the spin polarization lifetime is maximal at a nonzero wave vector, in contrast with expectations based on ordinary spin diffusion, but in quantitative agreement with recent theories that treat diffusion in the presence of spin-orbit coupling.

Exact SU(2) symmetry and persistent spin helix in a spin-orbit coupled system

Spin-orbit coupled systems generally break the spin rotation symmetry. However, for a model with equal Rashba and Dresselhauss coupling constants, and for the [110] Dresselhauss model, a new type of SU(2) spin rotation symmetry is discovered. This symmetry is robust against spin-independent disorder and interactions and is generated by operators whose wave vector depends on the coupling strength. It renders the spin lifetime infinite at this wave vector, giving rise to a persistent spin helix. We obtain the spin fluctuation dynamics at, and away from, the symmetry point and suggest experiments to observe the persistent spin helix.

Mechanism and Origin of Exciton Spin Relaxation in CdSe Nanorods

The dynamics of exciton spin relaxation in CdSe nanorods of various sizes and shapes are measured by an ultrafast transient polarization grating technique. The measurement of the third-order transient grating (3-TG) signal utilizing linear cross-polarized pump pulses enables us to monitor the history of spin relaxation among the bright exciton states with a total angular momentum of F = +/-1. From the measured exciton spin relaxation dynamics, it is found that the effective mechanism of exciton spin relaxation is sensitive to the size of the nanorod. Most of the measured cross-polarized 3-TG signals show single-exponential spin relaxation dynamics, while biexponential spin relaxation dynamics are observed in the nanorod of the largest diameter. This analysis suggests that a direct exciton spin flip process between the bright exciton states with F = +/-1 is the dominant spin relaxation mechanism in small nanocrystals, and an indirect spin flip via the dark states with F = +/-2 contributes as the size of the nanocrystal increases. This idea is examined by simulations of 3-TG signals with a kinetic model for exciton spin relaxation considering the states in the exciton fine structure. Also, it is revealed that the rate of exciton spin relaxation has a strong correlation with the diameter, d, of the nanorod, scaled by the power law of 1/d4, rather than other shape parameters such as length, volume, or aspect ratio.

Optical measurement and control of spin diffusion in n-doped GaAs quantum wells

Transient spin gratings are used to study spin diffusion in lightly n-doped GaAs quantum wells at low temperatures. The spin grating is shown to form in the excess electrons from doping, providing spin relaxation and transport properties of the carriers most relevant to spintronic applications. We demonstrate that spin diffusion of the these carriers is accelerated by increasing the density or energy of the optically excited carriers. These results can be used to better understand and even control spin transport in experiments that optically excite spin-polarized carriers.

Spin relaxation in the presence of electron-electron interactions

The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions, substantially different spin relaxation rates may be observed depending on the technique used to extract them. It is demonstrated that the relaxation rate of a spin population is proportional to the spin-diffusion constant D(s), while the spin-orbit scattering rate controlling the weak-localization corrections is proportional to the diffusion constant D, i.e., the conductivity. The two diffusion constants get strongly renormalized by the electron-electron interactions, but in different ways. As a result, the corresponding relaxation rates are different, with the difference between the two being especially strong near a magnetic instability or near the metal-insulator transition.

Observation of spin Coulomb drag in a two-dimensional electron gas

An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin that offer potential advantages in dissipation, size and speed over charge-based devices. However, these advantages bring with them additional complexity. Because each electron carries a single, fixed value (- e) of charge, the electrical current carried by a gas of electrons is simply proportional to its total momentum. A fundamental consequence is that the charge current is not affected by interactions that conserve total momentum, notably collisions among the electrons themselves. In contrast, the electron's spin along a given spatial direction can take on two values, +/- [planck]/2 (conventionally upward arrow, downward arrow), so that the spin current and momentum need not be proportional. Although the transport of spin polarization is not protected by momentum conservation, it has been widely assumed that, like the charge current, spin current is unaffected by electron-electron (e-e) interactions. Here we demonstrate experimentally not only that this assumption is invalid, but also that over a broad range of temperature and electron density, the flow of spin polarization in a two-dimensional gas of electrons is controlled by the rate of e-e collisions.

Coherent magnetization rotation and phase control by ultrashort optical pulses in CrO(2) thin films

We have applied photoexcitation by ultrashort laser pulses to single crystal thin CrO(2) films to trigger coherent transient magnetization rotation on a subnanosecond time scale, in macroscale single domains. Moreover, by applying the photoexcitation by pairs of temporally separated pump pulses, the transient precession of the magnetization can be phase controlled, depending on the time separation between the pulses. The mechanism behind the photoexcitation originates from the modulation of the magnetocrystalline anisotropy by nonthermal hot electron spins.