Carrier-Controlled Doping Efficiency in La2CuO4+ delta

Extremely Overdoped Superconducting Cuprates via High Pressure Oxygenation Methods

Within the cuprate constellation, one fixed star has been the superconducting dome in the quantum phase diagram of transition temperature vs. the excess charge on the Cu in the CuO2-planes, p, resulting from O-doping or cation substitution. However, a more extensive search of the literature shows that the loss of the superconductivity in favor of a normal Fermi liquid on the overdoped side should not be assumed. Many experimental results from cuprates prepared by high-pressure oxygenation show Tc converging to a fixed value or continuing to slowly increase past the upper limit of the dome of p = 0.26–0.27, up to the maximum amounts of excess oxygen corresponding to p values of 0.3 to > 0.6. These reports have been met with disinterest or disregard. Our review shows that dome-breaking trends for Tc are, in fact, the result of careful, accurate experimental work on a large number of compounds. This behavior most likely mandates a revision of the theoretical basis for high-temperature superconductivity. That excess O atoms located in specific, metastable sites in the crystal, attainable only with extreme O chemical activity under HPO conditions, cause such a radical extension of the superconductivity points to a much more substantial role for the lattice in terms of internal chemistry and bonding.

Oxygen Point Defect Chemistry in Ruddlesden-Popper Oxides (La1-xSrx)2MO4±δ (M = Co, Ni, Cu)

Stability of oxygen point defects in Ruddlesden-Popper oxides (La1-xSrx)2MO4±δ (M = Co, Ni, Cu) is studied with density functional theory calculations to determine their stable sites, charge states, and energetics as functions of Sr content (x), transition metal (M), and defect concentration (δ). We demonstrate that the dominant O point defects can change between oxide interstitials, peroxide interstitials, and vacancies. In general, increasing x and atomic number of M stabilizes peroxide over oxide interstitials as well as vacancies over both peroxide and oxide interstitials; increasing δ destabilizes both oxide interstitials and vacancies but barely affects peroxide interstitials. We also demonstrate that the O 2p-band center is a powerful descriptor for these materials and correlates linearly with the formation energy of all defects. The trends of formation energy versus x, M, and δ and the correlation with O 2p-band center are explained in terms of oxidation chemistry and electronic structure.

Oxygen Interstitials in Superconducting La2CuO4: Their Valence State and Role

The nature of the much debated valence state of an interstitial oxygen atom in oxygen-doped La2CuO4 is the subject of this paper. In model cluster calculations, we studied the position, charge, and spin state of the interstitial oxygen atoms in this superconductor. The models considered allow the interstitial oxygen to move off a symmetrical position, to have varying spin and charge, and to be surrounded by various magnetic environments. UB3LYP calculations show that a model having an interstitial oxygen atom with a total spin of 1 is lowest in energy; the interstitial oxygen atoms here act as stable radicals with a net charge of -1. These results agree with experimental evidence for the paramagnetic behavior for interstitial atoms. The energy associated with a spin flip at a Cu site in our models is lower if interstitial oxygen has a local electron spin density, compared to the case when it does not. We provide a possible explanation for the increase of the doping concentrations of interstitial oxygen with a decrease of the Néel temperature of this system. The relative stability of the models we consider depends on their spin states, accompanied by structural changes; this explains indirectly the experimental change of the slope (from 2 to 1.3) of the linear relationship between the hole concentration and the oxygen content. Our results support a stripe phase in high temperature superconductivity; in our calculations, hole doping to the copper oxide layer comes only through the formation of an oxygen interstitial pair, not from any change of the local structural environment and magnetic field around the single interstitial.

Incommensurate valence modulation in high-Tc cuprates

An incommensurate modulation has been observed in a Cu-rich La2CuO4.003 crystal. It is shown that the modulation results from a periodically distributed holes lying on the CuO2 planes, and that the hole modulation may be regarded to be a kind of valence modulation. It is shown that appreciable valence modulation contrast may be generated by the mechanisms of hole scattering alone when the period of the modulation is of the order of 2 nm.

Coupling between a first-order gas-liquid phase transition and a second-order orientational transition in Langmuir monolayers

The Ginzburg-Landau theory is developed to investigate coupling between a gas-liquid first-order phase transition (FOPT) and an orientational second-order phase transition (SOPT) in Langmuir monolayers. It is found that the coupled SOPT and FOPT takes place simultaneously if the uncoupled FOPT occurs prior to the SOPT with compression, and that in the opposite case, the coupling makes the FOPT take place at a lower pressure, but still behind the SOPT. Gas-liquid phase separation always leads to a decrease in the averaged order parameter of the orientational phase transition, which is qualitatively consistent with experimental data.