Unexpected behavior of the local compressibility near the B = 0 metal-insulator transition

Scaling Theory of a Compressibility-Driven Metal-Insulator Transition in a Two-Dimensional Electron Fluid

We present a scaling description of a metal-insulator transition in two-dimensional electron systems that is driven by a vanishing compressibility rather than a vanishing diffusion coefficient. A small set of basic assumptions leads to a consistent theoretical framework that is compatible with existing transport and compressibility measurements, and allows us to make predictions for other observables. We also discuss connections between these ideas and other theories of transitions to an incompressible quantum fluid.

Transport in two-dimensional disordered semimetals

We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the electron-hole liquid subject to zero and finite perpendicular magnetic fields using an effective medium approximation and a complementary mapping on resistor networks. In the presence of smooth disorder and in the limit of a weak electron-hole recombination rate, we find for small but finite overlap of the electron and hole bands an abrupt upturn in resistivity when lowering the temperature but no divergence at zero temperature. We discuss how this behavior is relevant for several experimental realizations and introduce a simple physical explanation for this effect.

Electrical current switching in single CdSe nanorods

Electrical current measurements through individually wired colloidal CdSe nanorods exhibit pronounced multistability. This current switching is analogous to the widely observed fluorescence intermittency in similar systems and may be associated with surface charge dynamics. Such association is quantitatively established for the case when the current is bistable, where the probability of the sojourn time t at the high or low current state follows an exponential dependence. Remarkably, this behavior can be modeled by charging dynamics of a single surface trap, whose position could be estimated from the intermittent current-voltage characteristics. The methodology presented here provides a unique route for charge dynamic sensing at the nanoscale, where the nanorod senses its own surface charge.

Observable bulk signatures of non-Abelian quantum Hall States

We show that non-Abelian quantum Hall states can be identified by experimental measurements of the temperature dependence of either the electrochemical potential or the orbital magnetization. The predicted signals of non-Abelian statistics are within experimental resolution, and can be clearly distinguished from other contributions under realistic circumstances. The proposed measurement technique also has the potential to resolve spin-ordering transitions in low density electronic systems in the Wigner crystal and strongly interacting Luttinger liquid regimes.

Resistance noise in electrically biased bilayer graphene

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene are strongly connected to its band structure and display a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization, and screening properties of bilayer graphene.

Evidence of a transition from nonlinear to linear screening of a two-dimensional electron system detected by photoluminescence spectroscopy

We clearly identify single-electron-localization (SEL), nonlinear screening (NLS), and linear screening (LS) regimes of gate induced electrons in a GaAs quantum well from photoluminescence spectra and intergate capacitance. Neutral and charged excitons observed in the SEL regime rapidly lose their oscillator strength when electron puddles are formed, which mark the onset of NLS. A further increase in the density of the electrons induces the transition from the NLS to LS, where the emission of a charged exciton changes to the recombination of two-dimensional electron gas and a hole.

Single-electron force readout of nanoparticle electrometers attached to carbon nanotubes

We introduce a new technique of probing the local potential inside a nanostructure employing Au nanoparticles as electrometers and using single-electron force microscopy to sense the charge states of the Au electrometers, which are sensitive to local potential variations. The Au nanoelectrometers are weakly coupled to a carbon nanotube through high-impedance molecular junctions. We demonstrate the operation of the Au nanoelectrometer, determine the impedance of the molecular junctions, and measure the local potential profile in a looped nanotube.

A self-consistent theory for graphene transport

We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities n(imp). For dirty samples (250 x 10(10) cm(-2) < n(imp) < 400 x 10(10) cm(-2)), the value of the minimum conductivity at low carrier density is indeed 4e(2)/h in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on n(imp), increasing to 8e(2)/h for n(imp) approximately 20 x 10(10) cm(-2). A clear strategy to improve graphene mobility is to eliminate charged impurities or use a substrate with a larger dielectric constant.

Chirality and correlations in graphene

Graphene is described at low energy by a massless Dirac equation whose eigenstates have definite chirality. We show that the tendency of Coulomb interactions in lightly doped graphene to favor states with larger net chirality leads to suppressed spin and charge susceptibilities. Our conclusions are based on an evaluation of graphene's exchange and random-phase-approximation correlation energies. The suppression is a consequence of the quasiparticle chirality switch which enhances quasiparticle velocities near the Dirac point.

Transverse dielectric matrix and shear mode dispersion in strongly coupled electronic bilayer liquids

The authors develop a transverse dielectric matrix and from it they calculate the shear mode dispersion in strongly coupled charged-particle bilayer liquids in the T=0 quantum domain. The formulation is based on the classical quasilocalized charge approximation (QLCA) and extends the QLCA formalism into the quantum domain. Its development parallels and complements the development of a similarly extended longitudinal dielectric matrix formalism reported in a recent companion work [K. I. Golden, H. Mahassen, G. J. Kalman, G. Senatore, and F. Rapisarda, Phys. Rev. E 71, 036401 (2005)]. Using pair correlation function data generated from diffusion Monte Carlo simulations, the authors calculate the dispersion of the in-phase and out-of-phase shear modes over a wide range of high-r(s) values and layer separations. Over the coupling range 10< or =r(s)< or =30 and for layer separations 0.2/sqrt[pi(n)]< or =d< or =0.5/sqrt[pi(n)] , the present study predicts the existence of a robust out-of-phase gapped shear mode dispersion in the domain of the q,omega -plane above the left boundary of the RPA single-pair excitation region; under these conditions, the out-of-phase collective excitation is entirely immune to Landau damping and can be safely considered to be mostly unaffected by diffusive-migrational damping.

Dynamic compressibility and aging in Wigner crystals and quantum glasses

We study the nonequilibrium linear response of quantum elastic systems pinned by quenched disorder with Schwinger-Keldysh real-time techniques complemented by a mean-field variational approach. We find (i) a quasiequilibrium regime in which the analytic continuation from the imaginary-time replica results holds provided the marginality condition is enforced, and (ii) an aging regime. The conductivity and compressibility are computed. The latter is found to cross over from its dynamic to static value on a scale set by the waiting time after a quench, an effect which can be probed in experiments in, e.g., Wigner glasses.

Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition

We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition--a crossover in the sign of deltaR/deltaT with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a tenfold difference in r(s), the compressibility of both electrons and holes is well described by the theory of nonlinear screening of the random potential. We show that the resistivity exhibits a scaling behavior near the percolation threshold found from analysis of the compressibility. Notably, the percolation transition occurs at a much lower density than the crossover.

Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of approximately 1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.

Dielectric matrix and plasmon dispersion in strongly coupled electronic bilayer liquids

We develop a dielectric matrix and analyze plasmon dispersion in strongly coupled charged-particle bilayers in the T = 0 quantum domain. The formulation is based on the classical quasilocalized charge approximation (QLCA) and extends the QLCA formalism into the quantum domain. Its development, which parallels that of the two-dimensional companion paper [Phys. Rev. E 70, 026406 (2004)] by three of the authors, generalizes the single-layer scalar formalism therein to a bilayer matrix formalism. Using pair correlation function data generated from diffusion Monte Carlo simulations, we calculate the dispersion of the in-phase and out-of-phase plasmon modes over a wide range of high- r(s) values and layer separations. The out-of-phase spectrum exhibits an exchange-correlation induced long-wavelength energy gap in contrast to earlier predictions of acoustic dispersion softened by exchange and correlations. The energy gap is similar to what has been previously predicted for classical charged-particle bilayers and subsequently confirmed by recent molecular dynamics computer simulations.

Phase diagram of coulomb interactions across the metal-insulator transition in Si:B

Measurements of the single-particle density of states (DOS) near T=0 K in Si:B are used to construct an energy-density phase diagram of Coulomb interactions across the critical density n(c) of the metal-insulator transition. Insulators and metals are found to be distinguishable only below a phase boundary epsilon*(|n/n(c)-1|) determined by the Coulomb energy. Above epsilon* is a mixed state where metals and insulators equidistant from n(c) cannot be distinguished from their DOS structure. The data imply a diverging screening radius at n(c), which may signal an interaction-driven thermodynamic state change.

Localization of fractionally charged quasi-particles

An outstanding question pertaining to the microscopic properties of the fractional quantum Hall effect is understanding the nature of the particles that participate in the localization but that do not contribute to electronic transport. By using a scanning single electron transistor, we imaged the individual localized states in the fractional quantum Hall regime and determined the charge of the localizing particles. Highlighting the symmetry between filling factors 1/3 and 2/3, our measurements show that quasi-particles with fractional charge e* = e/3 localize in space to submicrometer dimensions, where e is the electron charge.

Dielectric response function and plasmon dispersion in a strongly coupled two-dimensional Coulomb liquid

We have formulated a dielectric response function for strongly coupled two-dimensional Coulomb liquids in the T=0 quantum domain. The formulation is based on the classical quasilocalized charge approximation [G. Kalman and K.I. Golden, Phys. Rev. A 41, 5516 (1990); K.I. Golden and G. Kalman, Phys. Plasmas 7, 14 (2000)] and extends the QLCA formalism into the quantum domain. We calculate the dispersion of the longitudinal plasmon mode for r(s) =10, 20, 40 and the resulting dispersion curves are compared with recent experimental results. We also conjecture the possible existence of a new high-wave-number collective excitation in close proximity to the right boundary of the pair continuum.

The microscopic nature of localization in the quantum Hall effect

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties owing to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated with a single-particle drift motion of electrons along contours of constant disorder potential. Transport experiments that probe the extended states in the transition regions between quantum Hall phases have been used to test both the theory and its implications for quantum Hall phase transitions. Although several experiments on highly disordered samples have affirmed the validity of the single-particle picture, other experiments and some recent theories have found deviations from the predicted universal behaviour. Here we use a scanning single-electron transistor to probe the individual localized states, which we find to be strikingly different from the predictions of single-particle theory. The states are mainly determined by Coulomb interactions, and appear only when quantization of kinetic energy limits the screening ability of electrons. We conclude that the quantum Hall effect has a greater diversity of regimes and phase transitions than predicted by the single-particle framework. Our experiments suggest a unified picture of localization in which the single-particle model is valid only in the limit of strong disorder.

Resistance noise scaling in a dilute two-dimensional hole system in GaAs

We have measured the resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power S(R)/R(2) increases strongly when the hole density p(s) is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p(s). The noise scales with the resistance, S(R)/R(2) approximately R2.4, as for a second order phase transition such as a percolation transition. The p(s) dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p(*) which is lower than the observed MIT critical density p(c).

Droplet state and the compressibility anomaly in dilute 2D electron systems

We investigate the space distribution of carrier density and the compressibility of two-dimensional (2D) electron systems by using the local density approximation. The strong correlation is simulated by the local exchange and correlation energies. A slowly varied disorder potential is applied to simulate the disorder effect. We show that the compressibility anomaly observed in 2D systems which accompanies the metal-insulator transition can be attributed to the formation of the droplet state due to a disorder effect at low carrier densities.

Microscopic Structure of the Metal-Insulator Transition in Two Dimensions

A single electron transistor is used as a local electrostatic probe to study the underlying spatial structure of the metal-insulator transition in two dimensions. The measurements show that as we approach the transition from the metallic side, a new phase emerges that consists of weakly coupled fragments of the two-dimensional system. These fragments consist of localized charge that coexists with the surrounding metallic phase. As the density is lowered into the insulating phase, the number of fragments increases on account of the disappearing metallic phase. The measurements reveal that the metal-insulator transition is a result of the microscopic restructuring that occurs in the system.